Patents by Inventor Shin CHANSEOB

Shin CHANSEOB has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
    Patent number: 8957427
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: February 17, 2015
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Daniel Estrada, Evan O'Hara, Haoran Shi, Shin Chanseob, Yeojin Yoon
  • SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO
    Publication number: 20140306236
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Application
    Filed: June 23, 2014
    Publication date: October 16, 2014
    Inventors: Jacob J. RICHARDSON, Daniel ESTRADA, Evan O'HARA, Haoran SHI, Shin CHANSEOB, Yeojin YOON
  • Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
    Patent number: 8796693
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: August 5, 2014
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Daniel Estrada, Evan C. O'Hara, Haoran Shi, Shin Chanseob, Yeojin Yoon
  • SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO
    Publication number: 20140175452
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Application
    Filed: December 26, 2012
    Publication date: June 26, 2014
    Applicant: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Jacob J. RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI, Shin CHANSEOB, Yeojin YOON