Patents by Inventor Shin-Chuan Chiang
Shin-Chuan Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200006405Abstract: A manufacturing method of a semiconductor thin film transistor (TFT) and a display panel are provided. According to the manufacturing method, a substrate is provided. A semiconductor pattern is formed on the substrate. A first insulating layer is formed on the substrate and covers the semiconductor pattern. A first metal layer is formed on the first insulating layer, and the first insulating layer is located between the semiconductor pattern and the first metal layer. A half-tone mask photoresist pattern is formed on the first metal layer. The half-tone mask photoresist pattern exposes a portion of the first metal layer. The portion of the first metal layer exposed by the half-tone mask photoresist pattern is removed to form a gate. The gate covers a portion of the semiconductor pattern. A source and a drain are formed on the semiconductor pattern.Type: ApplicationFiled: August 31, 2018Publication date: January 2, 2020Applicant: Chunghwa Picture Tubes, LTD.Inventors: Hsi-Ming Chang, Shin-Chuan Chiang, Yen-Yu Huang
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Patent number: 10373819Abstract: A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.Type: GrantFiled: February 2, 2018Date of Patent: August 6, 2019Assignee: Chunghwa Picture Tubes, LTD.Inventors: Hsi-Ming Chang, Shin-Chuan Chiang, Yen-Yu Huang
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Publication number: 20190148137Abstract: A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.Type: ApplicationFiled: February 2, 2018Publication date: May 16, 2019Applicant: Chunghwa Picture Tubes, LTD.Inventors: Hsi-Ming Chang, Shin-Chuan Chiang, Yen-Yu Huang
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Publication number: 20190115539Abstract: An organic light emitting diode includes a substrate, a bottom electrode, a first dielectric layer, a second dielectric layer, an organic light emitting layer, and a top electrode. The bottom electrode is disposed on the substrate. The first dielectric layer is disposed on the bottom electrode and has a first opening. The second dielectric layer is disposed on the first dielectric layer and has a second opening. The second opening is aligned with the first opening and exposes a portion of an upper surface of the bottom electrode. The organic light emitting layer is disposed in the first opening and the second opening. The organic light emitting layer contact the potion of the upper surface of the bottom electrode. The top electrode covers the organic light emitting layer.Type: ApplicationFiled: November 29, 2017Publication date: April 18, 2019Inventors: Wen-Kuang TSAO, Shin-Chuan CHIANG, Der-Chun WU, Yen-Yu HUANG
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Publication number: 20170025443Abstract: A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.Type: ApplicationFiled: July 24, 2015Publication date: January 26, 2017Inventors: Der-Chun Wu, Shin-Chuan Chiang, Yu-Hsien Chen, Po-Lung Chen, Yi-Hsien Lin, Cheng-Jung Yang, Kuo-Hsing Tseng
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Patent number: 9543330Abstract: A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.Type: GrantFiled: July 24, 2015Date of Patent: January 10, 2017Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Der-Chun Wu, Shin-Chuan Chiang, Yu-Hsien Chen, Po-Lung Chen, Yi-Hsien Lin, Cheng-Jung Yang, Kuo-Hsing Tseng
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Patent number: 9385145Abstract: A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.Type: GrantFiled: November 26, 2014Date of Patent: July 5, 2016Assignee: CHUNGHWA PICTURE TUBES, LTD.Inventors: Shin-Chuan Chiang, Ya-Ju Lu, Yu-Hsien Chen, Yen-Yu Huang
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Patent number: 9373683Abstract: The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.Type: GrantFiled: October 6, 2014Date of Patent: June 21, 2016Assignee: Chunghwa Picture Tubes, LTD.Inventors: Shin-Chuan Chiang, En-Chih Liu, Yu-Hsien Chen, Ya-Ju Lu, Yen-Yu Huang
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Publication number: 20160079285Abstract: A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.Type: ApplicationFiled: November 26, 2014Publication date: March 17, 2016Inventors: Shin-Chuan Chiang, Ya-Ju Lu, Yu-Hsien Chen, Yen-Yu Huang
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Publication number: 20160027873Abstract: The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.Type: ApplicationFiled: October 6, 2014Publication date: January 28, 2016Inventors: Shin-Chuan Chiang, En-Chih Liu, Yu-Hsien Chen, Ya-Ju Lu, Yen-Yu Huang
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Patent number: 8614444Abstract: A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.Type: GrantFiled: November 1, 2011Date of Patent: December 24, 2013Assignees: Chunghwa Picture Tubes, Ltd., National Chiao Tung UniversityInventors: Huang-Chung Cheng, Yu-Chih Huang, Po-Yu Yang, Shin-Chuan Chiang, Huai-An Li
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Publication number: 20130009144Abstract: A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.Type: ApplicationFiled: November 1, 2011Publication date: January 10, 2013Inventors: Huang-Chung CHENG, Yu-Chih HUANG, Po-Yu YANG, Shin-Chuan CHIANG, Huai-An LI
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Publication number: 20120231588Abstract: A manufacturing method of thin film transistors is provided. The manufacturing method includes: providing a substrate; forming a gate electrode; forming a gate insulating layer; forming a patterned oxide semiconductor layer; forming a source electrode and a drain electrode; and executing a localized laser treatment. A laser beam is used to irradiate at least a part of the patterned oxide semiconductor layer in the localized laser treatment. An electrical resistitivity of the patterned oxide semiconductor layer irradiated by the laser beam is lower than an electrical resistitivity of the patterned oxide semiconductor layer without being irradiated by the laser beam.Type: ApplicationFiled: May 26, 2011Publication date: September 13, 2012Inventors: Shin-Chuan Chiang, Yu-Hao Lai, Huai-An Li
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Patent number: 8222095Abstract: A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.Type: GrantFiled: October 27, 2008Date of Patent: July 17, 2012Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corporation, Hannstar Display Corporation, Chi Mei Optoelectronics Corporation, Industrial Technology Research InstituteInventors: Fang-Chen Luo, Shuo-Wei Liang, Shin-Chuan Chiang, Chao-Nan Chen, Chin-Chih Yu
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Patent number: 8106389Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.Type: GrantFiled: October 28, 2009Date of Patent: January 31, 2012Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corporation, Hannstar Display Corporation, Chi Mei Optoelectronics Corporation, Industrial Technology Research Institute, TPO Displays Corp.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Patent number: 7745267Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.Type: GrantFiled: December 22, 2006Date of Patent: June 29, 2010Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corporation, Hannstar Display Corporation, Chi Mei Optoelectronics Corporation, Industrial Technology Research Institute, TPO Dispalys Corp.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Publication number: 20100044696Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.Type: ApplicationFiled: October 28, 2009Publication date: February 25, 2010Applicants: TAIWAN TFT LCD ASSOCIATION, CHUNGHWA PICTURE TUBES, LTD., AU OPTRONICS CORPORATION, HANNSTAR DISPLAY CORPORATION, CHI MEI OPTOELECTRONICS CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TPO DISPLAYS CORP.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Publication number: 20090305473Abstract: A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.Type: ApplicationFiled: October 27, 2008Publication date: December 10, 2009Applicants: TAIWAN TFT LCD ASSOCIATION, CHUNGHWA PICTURE TUBES, LTD., AU OPTRONICS CORPORATION, HANNSTAR DISPLAY CORPORATION, CHI MEI OPTOELECTRONICS CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Fang-Chen Luo, Shuo-Wei Liang, Shin-Chuan Chiang, Chao-Nan Chen, Chin-Chih Yu
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Publication number: 20080057631Abstract: A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.Type: ApplicationFiled: December 22, 2006Publication date: March 6, 2008Applicants: TAIWAN TFT LCD ASSOCIATION, CHUNGHWA PICTURE TUBES, LTD., AU OPTRONICS CORPORATION, HANNSTAR DISPLAY CORPORATION, CHI MEI OPTOELECTRONICS CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TPO DISPLAYS CORP.Inventors: Hsiang-Yuan Cheng, Shin-Chuan Chiang, Shih-Hsiang Lai, Chin-Chih Yu, Bor-Chuan Chuang
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Publication number: 20070141838Abstract: A direct patterning method for manufacturing a metal layer of a semiconductor device is provided. The claimed method reduces the materials and hours required by prior methods such as the thin film depositing method for a substrate, and the photolithographic method for manufacturing a transistor. The preferred embodiment of the present invention comprises a step of defining the pattern of the seeder material and a step of selectively thin film deposition. The direct patterned technology for the seeder and a chemical bath deposition (CBD) are utilized to provide the thin film growing method with non-vacuum and selective deposition. The object of the invention is applied to produce the wire or electrode, within the semiconductor device, or to deposit and manufacture the thin film in the large-area transistor array or a reflective layer.Type: ApplicationFiled: May 26, 2006Publication date: June 21, 2007Inventors: Ming-Nan Hsiao, Shin-Chuan Chiang, Bor-Chuan Chuang