Abstract: An information processing device for processing target data according to one or more embodiments may include a preprocessor and a preprocess ID assigner. The preprocessor may be configured to generate preprocessed data by performing at least one preprocess on the target data. The preprocess ID assigner may be configured to assign, to the preprocessed data, a preprocess ID corresponding to the at least one preprocess.

Abstract: An information processing device for processing target data according to one or more embodiments may include a preprocessor and a preprocess ID assigner. The preprocessor may be configured to generate preprocessed data by performing at least one preprocess on the target data. The preprocess ID assigner may be configured to assign, to the preprocessed data, a preprocess ID corresponding to the at least one preprocess.

Abstract: A monitoring system according to an aspect may construct a predictive model that predicts a value of a removal amount depending on values of an accumulated operating time and an accumulated number of processed wafers, based on learning data; acquires actual values of the accumulated operating time, the accumulated number of processed wafers, and the removal amount with respect to a wet etching apparatus when it is in operation; calculates a predicted value of the removal amount by inputting the acquired actual values of the accumulated operating time and the accumulated number of processed wafers to the predictive model; calculates the difference between the predicted value and the actual value of the removal amount, as an indicator value serving as a measure of how necessary it is to replace a chemical solution; and outputs information regarding replacement of the chemical solution based on the calculated indicator value.

Abstract: A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an H2 carrier gas; forming a second layer by laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer using an H2 carrier gas; and forming a third layer that is an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer using an H2 carrier gas after forming the second layer. A method for manufacturing a nitride semiconductor device includes the method steps for forming the nitride semiconductor laminated structure.

Abstract: A nitride semiconductor device of the present invention includes: a nitride semiconductor laminated structure including an n-type first layer, a second layer that is laminated on the first layer and contains a p-type impurity, and an n-type third layer laminated on the second layer, each layer of the nitride semiconductor laminated structure being made of a Group III nitride semiconductor, and having a wall surface extending from the first, second, to third layers; a fourth layer that is formed on the wall surface in the second layer and that has a different conductive characteristic from that of the second layer; a gate insulating film formed to contact the fourth layer; and a gate electrode formed as facing the fourth layer with the gate insulating film being sandwiched between the gate electrode and the fourth layer.

Abstract: The method for forming a nitride semiconductor laminated structure according to the present invention includes: a first layer forming step of forming an n-type or i-type first layer composed of a group III nitride semiconductor; a second layer forming step of laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer; and a third layer forming step of forming an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer after the second layer forming step.

Abstract: The nitride semiconductor device includes: a nitride semiconductor structure comprising an n-type first layer, a p-type second layer, and an n-type third layer, the nitride semiconductor structure comprising a mesa structure having a lateral surface which forms a wall surface extending from the first, second, to third layers; a gate insulating film formed on the wall surface of the mesa structure; a gate electrode formed as facing the wall surface in the second layer; a drain electrode electrically connected to the first layer; and a source electrode electrically connected to the third layer, the nitride semiconductor structure having a high dislocation region and a low dislocation region arranged along a direction parallel to a principal surface of lamination of the nitride semiconductor structure, a dislocation density of the low dislocation region being lower than that of the high dislocation region, the mesa structure being formed in the low dislocation region.