Patents by Inventor Shin Hiraoka
Shin Hiraoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8829778Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) is based on a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.Type: GrantFiled: September 30, 2013Date of Patent: September 9, 2014Assignee: Mitsubishi Chemical CorporationInventors: Hiroaki Sakuta, Kazuhiko Kagawa, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
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Patent number: 8829780Abstract: The invention aims at providing controllable parameters that are correlated with special color rendering index R9, and at providing a white-light emitting semiconductor device having a high R9 value obtained through optimization of such parameters. The white-light emitting semiconductor device is provided with a phosphor as a light-emitting material and with a light-emitting semiconductor element as an excitation source of the phosphor. The phosphor includes at least a green phosphor and a wide-band red phosphor. In the white light-emitting semiconductor device, an intensity at wavelength 640 nm of an emission spectrum which has been normalized with respect to luminous flux is 100-110% of the intensity at wavelength 640 nm of a spectrum of standard light for color rendering evaluation which has been normalized with respect to luminous flux.Type: GrantFiled: August 10, 2012Date of Patent: September 9, 2014Assignee: Mitsubishi Chemical CorporationInventors: Hiroaki Sakuta, Kazuhiko Kagawa, Yoshihito Satou, Shin Hiraoka
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Patent number: 8716728Abstract: A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased.Type: GrantFiled: October 19, 2007Date of Patent: May 6, 2014Assignee: Mitsubishi Chemical CorporationInventors: Hiromitsu Kudo, Hirokazu Taniguchi, Hiroaki Okagawa, Shin Hiraoka, Takahide Joichi, Toshihiko Shima
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Publication number: 20140042896Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) is based on a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.Type: ApplicationFiled: September 30, 2013Publication date: February 13, 2014Applicant: Mitsubishi Chemical CorporationInventors: Hiroaki SAKUTA, Kazuhiko Kagawa, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
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Patent number: 8581488Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) consists of a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.Type: GrantFiled: November 9, 2011Date of Patent: November 12, 2013Assignee: Mitsubishi Chemical CorporationInventors: Hiroaki Sakuta, Kazuhiko Kagawa, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
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Patent number: 8455886Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.Type: GrantFiled: March 13, 2012Date of Patent: June 4, 2013Assignee: Mitsubishi Chemical CorporationInventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
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Publication number: 20120319565Abstract: The invention aims at providing controllable parameters that are correlated with special color rendering index R9, and at providing a white light-emitting semiconductor device having a high R9 value obtained through optimization of such parameters. The white light-emitting semiconductor device is provided with a phosphor as a light-emitting material and with a light-emitting semiconductor element as an excitation source of the phosphor. The phosphor includes at least a green phosphor and a wide-band red phosphor. In the white light-emitting semiconductor device, an intensity at wavelength 640 nm of an emission spectrum which has been normalized with respect to luminous flux is 100-110% of the intensity at wavelength 640 nm of a spectrum of standard light for color rendering evaluation which has been normalized with respect to luminous flux.Type: ApplicationFiled: August 10, 2012Publication date: December 20, 2012Applicant: Mitsubishi Chemical CorporationInventors: Hiroaki SAKUTA, Kazuhiko Kagawa, Yoshihito Satou, Shin Hiraoka
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Publication number: 20120175669Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.Type: ApplicationFiled: March 13, 2012Publication date: July 12, 2012Inventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
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Publication number: 20120171796Abstract: A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide film 104 in a GaN-based LED element 100. A contact resistance of the light-transmissive conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.Type: ApplicationFiled: March 13, 2012Publication date: July 5, 2012Inventors: Shin Hiraoka, Hiroaki Okagawa, Takahide Joichi
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Publication number: 20120112626Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) consists of a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.Type: ApplicationFiled: November 9, 2011Publication date: May 10, 2012Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Hiroaki SAKUTA, Kazuhiko KAGAWA, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
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Patent number: 8158990Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.Type: GrantFiled: October 5, 2007Date of Patent: April 17, 2012Assignee: Mitsubishi Chemical CorporationInventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
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Patent number: 8158994Abstract: A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide film 104 in a GaN-based LED element 100. A contact resistance of the light-transmissive conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.Type: GrantFiled: February 20, 2008Date of Patent: April 17, 2012Assignee: Mitsubishi Chemical CorporationInventors: Shin Hiraoka, Hiroaki Okagawa, Takahide Joichi
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Publication number: 20110260196Abstract: Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency.Type: ApplicationFiled: June 30, 2011Publication date: October 27, 2011Applicant: Mitsubishi Chemical CorporationInventors: Hiroaki OKAGAWA, Shin Hiraoka, Takahide Jouichi, Toshihiko Shima
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Publication number: 20110012154Abstract: Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency.Type: ApplicationFiled: November 7, 2008Publication date: January 20, 2011Applicant: Mitsubishi Chemical CorporationInventors: Hiroaki Okagawa, Shin Hiraoka, Takahide Jouichi, Toshihiko Shima
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Publication number: 20100314642Abstract: A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased.Type: ApplicationFiled: October 19, 2007Publication date: December 16, 2010Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Hiromitsu Kudo, Hirokazu Taniguchi, Hiroaki Okagawa, Shin Hiraoka, Takahide Joichi, Toshihiko Shima
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Publication number: 20100019247Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip 100 of the following (a): (a) the a GaN-based LED chip 100 comprising a light-transmissive substrate 101 and GaN-based semiconductor layer L formed on the light-transmissive substrate 101, wherein the GaN-based semiconductor layer L has a laminate structure containing n-type layer 102, light emitting layer 103 and p-type layer 104 in this order from the light-transmissive substrate 101 side, wherein a positive electrode E101 is formed on the p-type layer 104, said electrode E101 containing a light-transmissive electrode E101a of an oxide semiconductor and a positive contact electrode E101b electrically connected to the light-transmissive electrode, and the area of the positive contact electrode E101b is less than ½ of the area of the upper surface of the p-type layer 104.Type: ApplicationFiled: October 5, 2007Publication date: January 28, 2010Inventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
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Publication number: 20100012971Abstract: A first conductive film 104-1 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 in a GaN-based LED element 100. The contact resistance of a conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is made lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.Type: ApplicationFiled: February 20, 2008Publication date: January 21, 2010Inventors: Shin Hiraoka, Hiroaki Okagawa, Takahide Joichi
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Publication number: 20080135868Abstract: In an element structure of a nitride semiconductor light emitting element, the laminate including a light emitting part having a laminate structure of a first n-type layer 13, a p-type clad layer 15 and an active layer 14 sandwiched between them, and a second n-type layer 16 present at the outer side of the light emitting part and at the p-type clad layer side. When the laminate is to be grown on a substrate 11, the light emitting part has the p-type clad layer 15 placed on the upper side of the second n-type layer 16 is placed on the further upper side of the light emitting part. The second n-type layer 16 is dry-etched to form an exposed surface. An electrode P12 is formed on the surface exposed by dry etching, whereby the electrode P12 becomes a p-side electrode having a low contact resistance, which is used for injecting a hole in the p-type clad layer 15 of the aforementioned light emitting part, even if the electrode P12 is formed in the n-type layer 16.Type: ApplicationFiled: September 29, 2005Publication date: June 12, 2008Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Hiroaki Okagawa, Shin Hiraoka
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Patent number: 4643137Abstract: A V-type engine construction which comprises an engine block having a pair of upwardly diverging cylinder banks with a generally V-shaped space defined therebetween and also having a plurality of engine cylinders defined in each of the cylinder banks, generally rectangular cylinder heads of identical shape adapted to be mounted on the respective cylinder banks, each of which cylinder heads has intake ports communicateable with the respective engine cylinders in the associated cylinder bank and defined therein so as to open generally towards the V-shaped space and also has two spaced coolant outflow ports which are in located adjacent front and rear ends of the respective cylinder head with respect to the direction of arrangement of the engine cylinders in the associated bank and are defined therein so as to open generally towards the V-shaped space, and an intake manifold integrally formed with lids one for each cylinder head, each of which lids is adapted to close one of the outflow ports in the associated cType: GrantFiled: May 14, 1985Date of Patent: February 17, 1987Assignee: Mazda Motor CorporationInventors: Masahiro Choushi, Shin Hiraoka
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Patent number: 4603673Abstract: A crankcase ventilating system for a V-type, OHC internal combustion engine comprising a substantially hollow engine body structure having a pair of upwardly diverging cylinder banks and an oil pan secured to the body structure from below to define a crankcase, and also having a pressure buffer chamber, defined between the cylinder banks, at least one engine cylinder, defined in each of the cylinder banks, and a cam chamber defined therein at top of each of the cylinder banks, and an intake system for the introduction of a controlled combustible air-fuel mixture into the engine cylinders. The system comprises first separate oil return passages each defined in the body structure and communicating between the respective engine cylinder and the buffer chamber, and a connecting passage communicating between the buffer chamber and the crankcase.Type: GrantFiled: February 28, 1985Date of Patent: August 5, 1986Assignee: Mazda Motor CorporationInventors: Shin Hiraoka, Koji Asanomi, Ryoji Abe