Abstract: A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate.

Abstract: A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate.

Abstract: Provided is a method of fabricating a semiconductor device that includes forming first and second fins over first and second regions of a substrate, forming first and second gate structures over the first and second fins, the first and second gate structures including first and second poly gates, forming an inter-level dielectric (ILD) over the substrate, performing a chemical mechanical polishing on the ILD to expose the first and second poly gates, forming a mask to protect the first poly gate of the first gate structure, removing the second poly gate thereby forming a first trench, removing the mask, partially removing the first poly gate thereby forming a second trench, forming a work function metal layer partially filling the first and second trenches, forming a fill metal layer filling a remainder of the first and second trenches, and removing the metal layers outside the first and second trenches.

Abstract: Provided is a method of fabricating a semiconductor device that includes forming first and second fins over first and second regions of a substrate, forming first and second gate structures over the first and second fins, the first and second gate structures including first and second poly gates, forming an inter-level dielectric (ILD) over the substrate, performing a chemical mechanical polishing on the ILD to expose the first and second poly gates, forming a mask to protect the first poly gate of the first gate structure, removing the second poly gate thereby forming a first trench, removing the mask, partially removing the first poly gate thereby forming a second trench, forming a work function metal layer partially filling the first and second trenches, forming a fill metal layer filling a remainder of the first and second trenches, and removing the metal layers outside the first and second trenches.

Abstract: Provided is a method of fabricating a semiconductor device that includes forming first and second fins over first and second regions of a substrate, forming first and second gate structures over the first and second fins, the first and second gate structures including first and second poly gates, forming an inter-level dielectric (ILD) over the substrate, performing a chemical mechanical polishing on the ILD to expose the first and second poly gates, forming a mask to protect the first poly gate of the first gate structure, removing the second poly gate thereby forming a first trench, removing the mask, partially removing the first poly gate thereby forming a second trench, forming a work function metal layer partially filling the first and second trenches, forming a fill metal layer filling a remainder of the first and second trenches, and removing the metal layers outside the first and second trenches.

Abstract: A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal gate electrode is formed by filling the modified profile opening with a conductive material. A semiconductor device is also described, the device having a metal gate structure with a first width and a second, differing, width.

Abstract: A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal gate electrode is formed by filling the modified profile opening with a conductive material. A semiconductor device is also described, the device having a metal gate structure with a first width and a second, differing, width.

Abstract: Provided is a method of fabricating a semiconductor device that includes forming first and second fins over first and second regions of a substrate, forming first and second gate structures over the first and second fins, the first and second gate structures including first and second poly gates, forming an inter-level dielectric (ILD) over the substrate, performing a chemical mechanical polishing on the ILD to expose the first and second poly gates, forming a mask to protect the first poly gate of the first gate structure, removing the second poly gate thereby forming a first trench, removing the mask, partially removing the first poly gate thereby forming a second trench, forming a work function metal layer partially filling the first and second trenches, forming a fill metal layer filling a remainder of the first and second trenches, and removing the metal layers outside the first and second trenches.