Abstract: A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.

Abstract: A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, a plurality of output register units 21 to 24 that receive the charge from the imaging area 10, and a plurality of multiplication register units 31 to 34 that multiply charges from the output registers 21 to 24, respectively, and the multiplication register units 31 to 34 are different in the number of multiplication stages from each other.

Abstract: A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, a multiplication register unit 40 that multiplies the charge from the output register 20, and at least one charge dispersion means 71 that disperses the charge input to the multiplication register unit 40 in a width direction perpendicular to a transfer direction.

Abstract: In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).

Abstract: A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided.

Abstract: A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode 11A provided at an end portion of a starting side of the imaging region VR in an electron transfer direction. A specific vertical shift register (channel CH1) into which the electrons are injected by the electron injecting electrode 11A is disposed in a thick part of a semiconductor substrate, and is set in such a way as to be blocked from incident light.

Abstract: A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register.

Abstract: An intraoral sensor 1 includes: a case 4 having a first plate-shaped portion 12 and a second plate-shaped portion 16 that face each other; a photodetecting element 34 contained in the case 4 so that a light incident surface faces the first plate-shaped portion 12; a cover 6a, arranged on the outer surface of the second plate-shaped portion 16, for covering an opening 16a; and fixing members 32a and 32b, arranged between the second plate-shaped portion 16 and the cover 6a, for fixing to the case 4 a signal cable 24 connected to the photodetecting element 34 extending via the opening 16a from the inside to the outside of the case 4. This enables improvement of a connection strength between the case of the imaging device and the signal cable extending from an opposite side of the imaging surface.

Abstract: An X-ray imaging system is constituted of: an X-ray imaging device that includes a scintillator, which converts an X-ray image to an optical image, and an imaging element, which acquires an X-ray observed image by detecting the optical image generated by the scintillator; a first subtracter that performs a subtraction process between a first X-ray observed image, which contains a first noise image component, and a second X-ray observed image, which contains a second noise image component, to generate a noise image; a threshold value processing circuit that performs a threshold value process on the noise image to extract the first noise image component; and a second subtracter that subtracts the extracted first noise image component, from the first X-ray observed image to generate a noise- removed image.

Abstract: An X-ray imaging system 1A is constituted of: an X-ray imaging device 10 that includes a scintillator, which converts an X-ray image to an optical image, and an imaging element, which acquires an X-ray observed image by detecting the optical image generated by the scintillator; a first subtracter 25 that performs a subtraction process between a first X-ray observed image, which contains a first noise image component, and a second X-ray observed image, which contains a second noise image component, to generate a noise image; a threshold value processing circuit 26 that performs a threshold value process on the noise image to extract the first noise image component; and a second subtracter 27 that subtracts the extracted first noise image component, from the first X-ray observed image to generate a noise-removed image.