Patents by Inventor Shinichiro Yagi
Shinichiro Yagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038791Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: ApplicationFiled: October 10, 2023Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11888001Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: GrantFiled: March 31, 2023Date of Patent: January 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20230253420Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.Type: ApplicationFiled: April 13, 2023Publication date: August 10, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichiro YAGI, Yusuke OTAKE, Kyosuke ITO
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Publication number: 20230238404Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: ApplicationFiled: March 31, 2023Publication date: July 27, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11688747Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: GrantFiled: June 22, 2021Date of Patent: June 27, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Patent number: 11670649Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.Type: GrantFiled: March 16, 2020Date of Patent: June 6, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichiro Yagi, Yusuke Otake, Kyosuke Ito
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Publication number: 20220181366Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.Type: ApplicationFiled: March 16, 2020Publication date: June 9, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichiro YAGI, Yusuke OTAKE, Kyosuke ITO
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Publication number: 20220140156Abstract: Distance measurement accuracy is improved.Type: ApplicationFiled: February 6, 2020Publication date: May 5, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichiro YAGI, Toshifumi WAKANO
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Publication number: 20210313362Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: ApplicationFiled: June 22, 2021Publication date: October 7, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11075236Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: GrantFiled: May 28, 2018Date of Patent: July 27, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20200235149Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: ApplicationFiled: May 28, 2018Publication date: July 23, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 10460983Abstract: A method for manufacturing a bonded SOI wafer by bonding a bond wafer and a base wafer, each composed of a silicon single crystal, via an insulator film, including the steps of: depositing a polycrystalline silicon layer on the bonding surface side of the base wafer, polishing a surface of the polycrystalline silicon layer, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the polycrystalline silicon layer of the base wafer and the bond wafer via the insulator film, and thinning the bonded bond wafer to form an SOI layer; As a result, it is possible to provide a method for manufacturing a bonded SOI wafer which can prevent single-crystallization of polycrystalline silicon while suppressing an increase of the warpage of a base wafer even when the polycrystalline silicon layer to function as a carrier trap layer is deposited sufficiently thick.Type: GrantFiled: March 4, 2015Date of Patent: October 29, 2019Assignee: SHIN-ETSU HANDOTAI CO.,LTD.Inventors: Taishi Wakabayashi, Kenji Meguro, Masatake Nakano, Shinichiro Yagi, Tomosuke Yoshida
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Publication number: 20170040210Abstract: A method for manufacturing a bonded SOI wafer by bonding a bond wafer and a base wafer, each composed of a silicon single crystal, via an insulator film, including the steps of: depositing a polycrystalline silicon layer on the bonding surface side of the base wafer, polishing a surface of the polycrystalline silicon layer, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the polycrystalline silicon layer of the base wafer and the bond wafer via the insulator film, and thinning the bonded bond wafer to form an SOI layer; As a result, it is possible to provide a method for manufacturing a bonded SOI wafer which can prevent single-crystallization of polycrystalline silicon while suppressing an increase of the warpage of a base wafer even when the polycrystalline silicon layer to function as a carrier trap layer is deposited sufficiently thick.Type: ApplicationFiled: March 4, 2015Publication date: February 9, 2017Applicant: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Taishi WAKABAYASHI, Kenji MEGURO, Masatake NAKANO, Shinichiro YAGI, Tomosuke YOSHIDA
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Patent number: 9152064Abstract: A method of preparing a developer includes mixing a carrier and a powder with each other while falling with gravity.Type: GrantFiled: August 7, 2013Date of Patent: October 6, 2015Assignee: Ricoh Company, Ltd.Inventors: Kousuke Suzuki, Yuuki Mizutani, Shinichiro Yagi
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Patent number: 8968976Abstract: A method for regenerating a carrier core material for electrophotography, including: treating a carrier for electrophotography including a carrier core material for electrophotography and a coating layer on a surface of the carrier core material for electrophotography with an aqueous solution including an oxidant in a subcritical state or a supercritical state having a temperature of 280° C. or greater and a density of 0.20 g/cm3 or greater, wherein an amount of the oxidant in a total amount of the aqueous solution used in the treating is greater than 0.05 parts by mass with respect to 1 part by mass of the carrier for electrophotography to be treated in the treating.Type: GrantFiled: September 24, 2012Date of Patent: March 3, 2015Assignees: Ricoh Company, Ltd., National University Corporation Shizuoka UniversityInventors: Takayuki Shimizu, Kazumi Ohtaki, Shinichiro Yagi, Takeshi Sako, Idzumi Okajima
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Patent number: 8722305Abstract: A method of preparing a carrier for electrophotography, including a core material and a coating material layer formed on the surface of the core material, including: coating the core material with the coating material; and burning the coating material with a high-frequency induction heater, wherein the core material has a saturated magnetization of from 40 to 95 Am2/kg.Type: GrantFiled: March 21, 2012Date of Patent: May 13, 2014Assignee: Ricoh Company, Ltd.Inventors: Masato Taikoji, Kousuke Suzuki, Shinichiro Yagi, Yuuki Mizutani
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Patent number: 8697326Abstract: A method of manufacturing a carrier including covering a core material with a covering material to form a covering layer on the core material and baking the covering material by heating the core material by high frequency induction applied thereto by a high frequency induction heating device.Type: GrantFiled: June 27, 2011Date of Patent: April 15, 2014Assignee: Ricoh Company, Ltd.Inventors: Kousuke Suzuki, Shinichiro Yagi, Masato Taikoji, Masanori Rimoto
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Publication number: 20140080045Abstract: A method of preparing a developer includes mixing a carrier and a powder with each other while falling with gravity.Type: ApplicationFiled: August 7, 2013Publication date: March 20, 2014Inventors: Kousuke Suzuki, Yuuki Mizutani, Shinichiro Yagi
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Patent number: 8647804Abstract: A method of preparing carrier for electrophotography, which includes a core material and a coating material layer formed on the surface of the core material, including coating a coating material of the coating material layer on the core material; and burning the coating material by an induction heater, wherein the induction heater applies an alternative current to parallely-located plural coil circuits including a conductive wire including the shape of a coil to generate a magnetic line changing its direction and intensity for inductively heating the core material to heat the coating material.Type: GrantFiled: May 30, 2012Date of Patent: February 11, 2014Assignee: Ricoh Company, Ltd.Inventors: Yuuki Mizutani, Shinichiro Yagi, Kousuke Suzuki, Masato Taikoji
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Publication number: 20130078567Abstract: A method for regenerating a carrier core material for electrophotography, including: treating a carrier for electrophotography including a carrier core material for electrophotography and a coating layer on a surface of the carrier core material for electrophotography with an aqueous solution including an oxidant in a subcritical state or a supercritical state having a temperature of 280° C. or greater and a density of 0.20 g/cm3 or greater, wherein an amount of the oxidant in a total amount of the aqueous solution used in the treating is greater than 0.05 parts by mass with respect to 1 part by mass of the carrier for electrophotography to be treated in the treating.Type: ApplicationFiled: September 24, 2012Publication date: March 28, 2013Inventors: Takayuki Shimizu, Kazumi Ohtaki, Shinichiro Yagi, Takeshi Sako, Idzumi Okajima