Patents by Inventor Shin Jae Kang
Shin Jae Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110080353Abstract: Disclosed is a touch screen to accurately receive a user selection by applying differential signals to the electrode patterns of a touch screen, each having a different capacitance.Type: ApplicationFiled: December 18, 2009Publication date: April 7, 2011Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Shin Jae Kang, Kyung Uk Kim, Won Jin Baek
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Publication number: 20110073832Abstract: A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the second structure including a metal nitride material, and including a lower part having a greater width than an upper part, and a third structure including a metal nitride material containing an element X, the third structure being on the second structure, the element X including at least one selected from the group of silicon, boron, aluminum, oxygen, and carbon.Type: ApplicationFiled: September 28, 2010Publication date: March 31, 2011Inventors: Hyun-Seok LIM, Shin-Jae Kang, Tai-Soo Lim, Jong-Cheol Lee, Jae-Hyoung Choi
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Publication number: 20110049646Abstract: Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed.Type: ApplicationFiled: September 2, 2010Publication date: March 3, 2011Inventors: Tai-Soo Lim, HyunSeok Lim, Shin-Jae Kang, Kyung-Tae Jang
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Patent number: 7863173Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.Type: GrantFiled: July 10, 2007Date of Patent: January 4, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Shin-Jae Kang, Gyuhwan Oh, Insun Park, Hyunseok Lim, Nak-Hyun Lim
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Patent number: 7817198Abstract: The present invention relates to an active pixel array of a CMOS image sensor. The active pixel array includes a pixel sensor array in which a pixel sensor which detects first and second light signals, of which the wavelengths are different from each other, among all wavelengths of light signals so as to generate current and voltage signals and a pixel sensor which detects a third light signal with a predetermined wavelength so as to generate a current or voltage signal are alternately arranged; and a color filter array that is formed on the pixel sensor array and in which a filter which transmits all wavelengths of light signals and a filter which transmits the third signal with a predetermined wavelength are alternately arranged.Type: GrantFiled: June 12, 2006Date of Patent: October 19, 2010Assignee: Samsung Electro-Mechanics Co., LtdInventors: Shin Jae Kang, Won Tae Choi, Joo Yul Ko, Deuk Hee Park
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Publication number: 20100243982Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.Type: ApplicationFiled: June 8, 2010Publication date: September 30, 2010Inventors: Gyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
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Patent number: 7759159Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.Type: GrantFiled: August 31, 2007Date of Patent: July 20, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Gyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
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Publication number: 20090008623Abstract: Methods of fabricating a nonvolatile memory device using a resistance material and a nonvolatile memory device are provided. According to example embodiments, a method of fabricating a nonvolatile memory device may include forming at least one semiconductor pattern on a substrate, forming a metal layer on the at least one semiconductor pattern, forming a mixed-phase metal silicide layer, in which at least two phases coexist, by performing at least one heat treatment on the substrate so that the at least one semiconductor pattern may react with the metal layer, and exposing the substrate to an etching gas.Type: ApplicationFiled: June 27, 2008Publication date: January 8, 2009Inventors: Hyun-Seok Lim, In-Sun Park, Gyu-Hwan Oh, Do-Hyung Kim, Shin-Jae Kang
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Publication number: 20080315174Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.Type: ApplicationFiled: July 10, 2007Publication date: December 25, 2008Inventors: Shin-Jae Kang, Gyuhwan Oh, Insun Park, Hyunseok Lim, Nak-Hyun Lim
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Publication number: 20080308784Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.Type: ApplicationFiled: August 31, 2007Publication date: December 18, 2008Inventors: Gyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
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Publication number: 20080230373Abstract: The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.Type: ApplicationFiled: March 19, 2008Publication date: September 25, 2008Inventors: Do-Hyung Kim, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Gyu-Hwan Oh
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Patent number: 7348533Abstract: In a unit pixel of a CMOS image sensor which compensates for a dark current generated in a photo diode to enhance its driving range, the photo diode generates a charge in accordance with a received light amount. A drive transistor has a gate for receiving the charge in the photo diode to output as an electrical signal, and a drain to which a power voltage is applied. A saturation detector receives a gate voltage of the drive transistor and judges the drive transistor saturated if an output voltage is smaller than a preset reference voltage. A switch connects or disconnects between the power voltage and the gate of the drive transistor in response to the judgment of the saturation detector.Type: GrantFiled: July 17, 2006Date of Patent: March 25, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joo Yul Ko, Won Tae Choi, Deuk Hee Park, Shin Jae Kang
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Patent number: 7348539Abstract: An image sensor for an image processing apparatus having a color filter array with open window cells alternating with single color filter cells includes a lens array containing a plurality of microlenses, a color filter array having a plurality of open window cells and color filter cells, each corresponding to one microlens. The image sensor also includes a protection layer, and a pixel sensor array having a first photosensor sensing a first light passed through each color filter cell, a second photosensor formed under the first photosensor, sensing a second light passed through each color filter cell, a third photosensor sensing a third light passed through each open window cell, and a fourth photosensor formed under the third photosensor, sensing a fourth light passed through each open window cell.Type: GrantFiled: March 24, 2006Date of Patent: March 25, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Shin Jae Kang, Won Tae Choi, Joo Yul Ko, Deuk Hee Park
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Patent number: 7235772Abstract: In a CMOS image sensor of the invention, a dynamic range is varied at a per-pixel level by a light amount to prevent saturation without degrading color reproduction of an overall image. A photo diode generates charges in accordance with a received light amount. A drive transistor amplifies the charges generated in the photodiode at a given gain. Further, a saturation detector receives an output voltage from the drive transistor and judges the image sensor saturated if the output voltage is beyond a limited level. A switch switches on/off in response to the judgment of the saturation detector. Also, a plurality of floating diffusions store the charges of the photodiode transferred through the switch. The floating diffusions are selectively connected to both the photodiode and a gate of the drive transistor at on/off the switch.Type: GrantFiled: June 8, 2006Date of Patent: June 26, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joo Yul Ko, Won Tae Choi, Deuk Hee Park, Shin Jae Kang
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Publication number: 20070114626Abstract: The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first conductivity type semiconductor layer formed on the semiconductor substrate in their order; and a second conductivity type well layer formed on the first conductivity type semiconductor layer. The second conductivity type buried layer, the intrinsic semiconductor layer and the first conductivity type semiconductor layer form a pin junction diode for detecting the long wavelength of visible light, and the first conductivity type semiconductor layer and the second conductivity type well layer form a p-n junction diode for detecting a short wavelength of light.Type: ApplicationFiled: September 19, 2006Publication date: May 24, 2007Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Shin Jae KANG, Won Tae CHOI, Joo Yul KO, Deuk Hee PARK
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Publication number: 20070030370Abstract: The present invention relates to an active pixel array of a CMOS image sensor. The active pixel array includes a pixel sensor array in which a pixel sensor which detects first and second light signals, of which the wavelengths are different from each other, among all wavelengths of light signals so as to generate current and voltage signals and a pixel sensor which detects a third light signal with a predetermined wavelength so as to generate a current or voltage signal are alternately arranged; and a color filter array that is formed on the pixel sensor array and in which a filter which transmits all wavelengths of light signals and a filter which transmits the third signal with a predetermined wavelength are alternately arranged.Type: ApplicationFiled: June 12, 2006Publication date: February 8, 2007Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Shin Jae Kang, Won Tae Choi, Joo Yul Ko, Deuk Hee Park
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Publication number: 20070023612Abstract: The invention provides a unit pixel of a CMOS image sensor which compensates for a dark current generated in a photo diode to enhance its driving range. In the unit pixel, a photo diode generates a charge in accordance with a received light amount. A drive has a gate for receiving the charge in the photo diode to output as an electrical signal and a drain to which a power voltage is applied. Also, a saturation detector receives a gate voltage of the drive transistor and judges the drive transistor saturated if an output voltage is smaller than a preset reference voltage. In addition, a switch connects or disconnects between the power voltage and the gate of the drive transistor in response to the judgment of the saturation detector.Type: ApplicationFiled: July 17, 2006Publication date: February 1, 2007Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Joo Yul KO, Won Tae CHOI, Deuk Hee PARK, Shin Jae KANG
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Publication number: 20070023614Abstract: A CMOS image sensor has a function to compensate a photodetector pixel from a dark current by using a dark pixel. In the CMOS image sensor, the photodetector pixel includes a first reset transistor with a drain connected to a supply voltage and a photodetector diode connected between a source of the first reset transistor and a ground. The dark pixel includes a mirror transistor with a drain connected to the supply voltage and a gate and source connected to a gate of the first reset transistor and a dark photodiode shielded from external light. The dark photodiode is connected between the source of the mirror diode and the ground. The dark pixel provides a current having a magnitude equal with that of a dark current flowing through the dark photodiode to the photodetector diode. This delays the saturation rate of the CMOS image sensor pixel and enhances the dynamic range thereof.Type: ApplicationFiled: July 17, 2006Publication date: February 1, 2007Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Deuk Hee PARK, Won Tae CHOI, Shin Jae KANG, Joo Yul KO
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Publication number: 20060284051Abstract: In a CMOS image sensor of the invention, a dynamic range is varied at a per-pixel level by a light amount to prevent saturation without degrading color reproduction of an overall image. A photo diode generates charges in accordance with a received light amount. A drive transistor amplifies the charges generated in the photodiode at a given gain. Further, a saturation detector receives an output voltage from the drive transistor and judges the image sensor saturated if the output voltage is beyond a limited level. A switch switches on/off in response to the judgment of the saturation detector. Also, a plurality of floating diffusions store the charges of the photodiode transferred through the switch. The floating diffusions are selectively connected to both the photodiode and a gate of the drive transistor at on/off the switch.Type: ApplicationFiled: June 8, 2006Publication date: December 21, 2006Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: JOO YUL KO, WON TAE CHOI, DEUK HEE PARK, SHIN JAE KANG
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Patent number: 7141826Abstract: Disclosed is a multi-wavelength light receiving element. The multi-wavelength light receiving element includes a first type substrate. A first intrinsic layer is positioned on the first type substrate. A heavily-doped second-type buried layer is positioned on the first intrinsic layer. A second intrinsic layer is positioned on the heavily-doped second-type buried layer. A plurality of heavily-doped first-type fingers are shallowly embedded in the second intrinsic layer. A first type has a doped state that is opposite to a second type.Type: GrantFiled: December 22, 2004Date of Patent: November 28, 2006Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joo Yul Ko, Shin Jae Kang, Kyoung Soo Kwon