Patents by Inventor Shin-Jiun Kuang
Shin-Jiun Kuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11804546Abstract: The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.Type: GrantFiled: April 20, 2021Date of Patent: October 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20230317825Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: ApplicationFiled: June 8, 2023Publication date: October 5, 2023Inventors: SHIN-JIUN KUANG, YI-HAN WANG, TSUNG-HSING YU, YI-MING SHEU
-
Patent number: 11715785Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: GrantFiled: April 22, 2021Date of Patent: August 1, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shin-Jiun Kuang, Yi-Han Wang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20230178603Abstract: Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.Type: ApplicationFiled: January 30, 2023Publication date: June 8, 2023Inventors: Shin-Jiun Kuang, Meng-Yu Lin, Chun-Fu Cheng, Chung-Wei WU
-
Patent number: 11569348Abstract: Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.Type: GrantFiled: February 26, 2021Date of Patent: January 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shin-Jiun Kuang, Meng-Yu Lin, Chun-Fu Cheng, Chung-Wei Wu
-
Patent number: 11502198Abstract: The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.Type: GrantFiled: August 3, 2020Date of Patent: November 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20220278196Abstract: Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.Type: ApplicationFiled: February 26, 2021Publication date: September 1, 2022Inventors: Shin-Jiun Kuang, Meng-Yu Lin, Chun-Fu Cheng, Chung-Wei WU
-
Publication number: 20210305426Abstract: The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.Type: ApplicationFiled: April 20, 2021Publication date: September 30, 2021Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20210242329Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: ApplicationFiled: April 22, 2021Publication date: August 5, 2021Inventors: SHIN-JIUN KUANG, YI-HAN WANG, TSUNG-HSING YU, YI-MING SHEU
-
Patent number: 11004955Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: GrantFiled: December 30, 2019Date of Patent: May 11, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shin-Jiun Kuang, Yi-Han Wang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Patent number: 10868175Abstract: Some embodiments of the present disclosure provide a method for fabricating a semiconductor structure. The method includes forming a recess in a substrate and forming an epitaxy region, comprising a multilayer structure with a substance having a first lattice constant larger than a second lattice constant of the substrate. Forming the epitaxy region further includes forming a first layer in proximity to an interface between the epitaxy region and the substrate with an average concentration of the substance from about 20 to about 32 percent by an in situ growth, and forming a second layer over the first layer, a bottom portion of the second layer having a concentration of the substance from about 27 percent to about 37 percent by an in situ growth operation.Type: GrantFiled: February 12, 2018Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20200365735Abstract: The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.Type: ApplicationFiled: August 3, 2020Publication date: November 19, 2020Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Patent number: 10741688Abstract: The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.Type: GrantFiled: November 3, 2017Date of Patent: August 11, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20200144395Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: ApplicationFiled: December 30, 2019Publication date: May 7, 2020Inventors: SHIN-JIUN KUANG, YI-HAN WANG, TSUNG-HSING YU, YI-MING SHEU
-
Patent number: 10522657Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: GrantFiled: September 21, 2018Date of Patent: December 31, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shin-Jiun Kuang, Yi-Han Wang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20190019881Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: ApplicationFiled: September 21, 2018Publication date: January 17, 2019Inventors: SHIN-JIUN KUANG, YI-HAN WANG, TSUNG-HSING YU, YI-MING SHEU
-
Patent number: 10084063Abstract: A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer providing strain to a channel under the gate structure; and a silicide layer in the stressor layer. The silicide layer extends from a top surface of the raised source/drain region and ends below the interface by a predetermined depth. The predetermined depth allows the stressor layer to maintain the strain of the channel.Type: GrantFiled: June 23, 2014Date of Patent: September 25, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shin-Jiun Kuang, Yi-Han Wang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Publication number: 20180166572Abstract: Some embodiments of the present disclosure provide a method for fabricating a semiconductor structure. The method includes forming a recess in a substrate and forming an epitaxy region, comprising a multilayer structure with a substance having a first lattice constant larger than a second lattice constant of the substrate. Forming the epitaxy region further includes forming a first layer in proximity to an interface between the epitaxy region and the substrate with an average concentration of the substance from about 20 to about 32 percent by an in situ growth, and forming a second layer over the first layer, a bottom portion of the second layer having a concentration of the substance from about 27 percent to about 37 percent by an in situ growth operation.Type: ApplicationFiled: February 12, 2018Publication date: June 14, 2018Inventors: SHIN-JIUN KUANG, TSUNG-HSING YU, YI-MING SHEU
-
Publication number: 20180061986Abstract: The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.Type: ApplicationFiled: November 3, 2017Publication date: March 1, 2018Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu
-
Patent number: 9893183Abstract: Some embodiments of the present disclosure provide a semiconductor structure including a substrate and an epitaxy region partially disposed in the substrate. The epitaxy region includes a substance with a lattice constant that is larger than a lattice constant of the substrate. The concentration profile of a substance in the epitaxy region is monotonically increasing from a bottom portion of the epitaxy region to a of the epitaxy region. A first layer of the epitaxy region has a height to width ratio of about 2. The first layer is a layer positioned closest to the substrate, and the first layer has an average concentration of the substance from about 20 to about 32 percent. A second layer disposed over the first layer. The second layer has a bottom portion with a concentration of the substance from about 27 percent to about 37 percent.Type: GrantFiled: July 10, 2014Date of Patent: February 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Shin-Jiun Kuang, Tsung-Hsing Yu, Yi-Ming Sheu