Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.

Abstract: There is provided a technique that includes: (a) supplying a hydrogen gas to a substrate set to a first temperature, without supplying any oxygen-containing gas; (b) changing a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, while the hydrogen gas is supplied to the substrate, without supplying any oxygen-containing gas; and (c) forming an oxide film on the substrate, on which (a) and (b) have been performed, by alternately repeating, while the temperature of the substrate is maintained at the second temperature: supplying a precursor gas to the substrate; and supplying an oxygen-containing gas to the substrate, without supplying any hydrogen-containing gas.

Abstract: There is provided a technique that includes: (a) supplying a hydrogen gas to a substrate set to a first temperature, without supplying any oxygen-containing gas; (b) changing a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, while the hydrogen gas is supplied to the substrate, without supplying any oxygen-containing gas; and (c) forming an oxide film on the substrate, on which (a) and (b) have been performed, by alternately repeating, while the temperature of the substrate is maintained at the second temperature: supplying a precursor gas to the substrate; and supplying an oxygen-containing gas to the substrate, without supplying any hydrogen-containing gas.

Abstract: In the disclosure, a processing method is provided. The method includes: (a) processing a substrate accommodated in a substrate holding region of a substrate retainer in a process chamber at a first temperature, the substrate retainer including a heat insulating region on one end thereof and the substrate holding region on the other end thereof; (b) supplying a cleaning gas to the heat insulating region at a second temperature variable within a temperature range lower than the first temperature and higher than a room temperature after unloading the substrate accommodated in the substrate retainer; and (c) supplying the cleaning gas to the substrate holding region at a third temperature variable within another temperature range lower than the second temperature after unloading the substrate accommodated in the substrate retainer.

Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.