Abstract: A semiconductor device comprises a semiconductor substrate having an area in which a circuit element is formed, and a passivation film formed on an upper surface of the semiconductor substrate, at least part of the passivation film being uneven shaped film, an upper surface of which is formed into an uneven shape independent of a shape of a lower surface of the passivation film layer.

Abstract: A semiconductor device comprises a semiconductor substrate having an area in which a circuit element is formed; and a passivation film formed on an upper surface of the semiconductor substrate,

Abstract: A semiconductor device with a longer channel length is made by first forming an insulating film over a semiconductor substrate, next forming on this insulating film an electrode having a main part and side parts which are thinner than the main part and may each have a tapered surface, then doping a surface of the semiconductor substrate by using the electrode as a mask and by ion-implanting impurities towards surfaces of the insulating film and the electrode through these side parts, and carrying out an annealing process and thereby causing the impurities to diffuse.