Abstract: A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.

Abstract: A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.

Abstract: A system and method for supporting an electronic component attached to a circuit board. Solder paste is applied to a solder pad underneath and aligned with a non-wetting region of an electronic component to form a support formed of solder to prevent electronic component lead flexing. The amount of solder for forming the support and the size of the solder pad are selected to bring the support into contact with, or in close proximity to, the non-wetting region.

Abstract: A liquid metal rotary connector for a vehicle steering mechanism utilizes a conductive alloy comprising Gallium, Indium, Tin and Zinc to electrically couple stationary and rotary terminals of the connector. The alloy is a liquid at ambient temperatures, and has a melting point of ?36° C., though testing has shown that it operates satisfactorily at temperatures as low as ?40° C. In a preferred arrangement, the rotary connector provides a two-wire connection through which power is supplied from the steering column to the steering wheel, and electronic modules located in the steering column and the steering wheel support bi-directional data communication through voltage and current modulation of the supplied power.

Abstract: An improved vertical integrated circuit device package that eliminates or reduces the need for wire bond connections and/or solder connections is provided. The package includes a vertical device having electrodes on opposite surfaces, and a compressed spring member that is used to establish compression electrical connections between the electrodes and corresponding electrically conductive elements.

Abstract: An improved vertical integrated circuit device package that eliminates or reduces the need for wire bond connections and/or solder connections is provided. The package includes a vertical device having electrodes on opposite surfaces, and a compressed spring member that is used to establish compression electrical connections between the electrodes and corresponding electrically conductive elements.

Abstract: An electronics assembly having a reduced need for wire bonds is provided. The electronics assembly includes a substrate having upper and lower surfaces. An electronic circuit device having conducting pads is attached to the upper surface of the substrate such that the conducting pads face the upper surface of the substrate. The lower surface of the substrate includes an exposed conducting feature. An electrically conducting interconnect in the substrate electrically couples the exposed conducting feature to the conducting pads of the electronic circuit device. The exposed conducting feature of the substrate is electrically coupled to a leadframe finger of a leadframe by solder, providing a conducting path between the leadframe finger and the electronic circuit device.

Abstract: An electronic assembly includes a bare IC die or a leadless electronic component having at least one electrically conductive contact formed on a surface of the component and a leadframe or a substrate having at least one electrically conductive trace. The conductive contact of the component is electrically and mechanically coupled to the conductive trace with a solder joint. The solder joint includes a plurality of solid electrically conductive metal particles having a substantially spherical shape and a diameter ranging from about one mil to about ten mils.

Abstract: A tin-lead solder alloy containing copper and optionally silver as its alloying constituents. The solder alloy consists essentially of, by weight, about 55% to about 75% tin, about 11% to about 44% lead, up to about 4% silver, nickel, palladium, platinum and/or gold, greater than 1% to about 10% copper, and incidental impurities. The solder alloys contain a small portion of CuSn intermetallic compounds, and exhibit a melting mechanism in which all but the intermetallic compounds melt within a narrow temperature range, though the actual liquidus temperature of the alloys may be considerably higher, such that the alloys can be treated as requiring peak reflow temperatures of about 250° C. or less. The intermetallic compounds precipitate out to form a diffusion barrier that increases the reliability of solder connections formed therewith.

Abstract: A lead-free solder alloy consisting essentially of, by weight, 3.0% to 3.5% silver, greater than 1% to about 15% copper, the balance tin and incidental impurities, and having an effective melting range of about 215° C. to about 222° C. The solder alloy is noneutectic, and therefore characterized by solidus and liquidus temperatures, the former being in a range of about 215° C. to about 218° C., while the latter is about 290° C. or more. However, the melting mechanism exhibited by the alloy is such that the alloy is substantially all melted and does not exhibit a “mushy zone” above the effective melting range, enabling the alloy to behave similarly to the SnAgCu eutectic alloy.

Abstract: A tin-lead solder alloy containing copper and optionally silver as its alloying constituents. The solder alloy consists essentially of, by weight, about 55% to about 75% tin, about 11% to about 44% lead, up to about 4% silver, nickel, palladium, platinum and/or gold, greater than 1% to about 10% copper, and incidental impurities. The solder alloys contain a small portion of CuSn intermetallic compounds, and exhibit a melting mechanism in which all but the intermetallic compounds melt within a narrow temperature range, though the actual liquidus temperature of the alloys may be considerably higher, such that the alloys can be treated as requiring peak reflow temperatures of about 250° C. or less. The intermetallic compounds precipitate out to form a diffusion barrier that increases the reliability of solder connections formed therewith.

Abstract: A tin-lead solder alloy containing copper and/or nickel and optionally silver, palladium, platinum and/or gold as its alloying constituents. The solder alloy consists essentially of, by weight, about 5% to about 70% tin, up to about 4% silver palladium, platinum and/or gold, about 0.5% to about 10% copper and/or nickel, the balance lead and incidental impurities. The presence of copper and/or nickel in the alloy has the beneficial effect of inhibiting the dissolution and leaching of silver from a silver-containing thick-film, such as a conductor or solder pad, into the molten solder alloy during reflow. In addition, solder joints formed of the solder alloy form a diffusion barrier layer of intermetallic compounds that inhibit solid-state interdiffusion between silver from a silver-containing thick-film and tin from the solder joint.

Abstract: A lead-free solder alloy consisting essentially of, by weight, 3.0% to 3.5% silver, greater than 1% to about 15% copper, the balance tin and incidental impurities, and having an effective melting range of about 215° C. to about 222° C. The solder alloy is noneutectic, and therefore characterized by solidus and liquidus temperatures, the former being in a range of about 215° C. to about 218° C., while the latter is about 290° C. or more. However, the melting mechanism exhibited by the alloy is such that the alloy is substantially all melted and does not exhibit a “mushy zone” above the effective melting range, enabling the alloy to behave similarly to the SnAgCu eutectic alloy.

Abstract: A solder alloy containing indium, lead, silver and copper as its alloying constituents, and a soldering process employing the solder alloy. The solder alloy consists essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, up to about 3.0% copper, the balance lead and incidental impurities. The alloy preferably has a solidus temperature in a range of about 173° C. to about 178° C., and a liquidus temperature in a range of about 187° C. to about 196° C. As such, the alloy can be used in a reflow process with a peak reflow temperature of about 220° C. to about 240° C., and is therefore compatible with most circuit components and can be simultaneously reflowed with 63Sn-37Pb solder.

Abstract: A solder alloy containing indium, lead, silver and copper as its alloying constituents, and a soldering process employing the solder alloy. The solder alloy consists essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, up to about 3.0% copper, the balance lead and incidental impurities. The alloy preferably has a solidus temperature in a range of about 173° C. to about 178° C., and a liquidus temperature in a range of about 187° C. to about 196° C. As such, the alloy can be used in a reflow process with a peak reflow temperature of about 220° C. to about 240° C., and is therefore compatible with most circuit components and can be simultaneously reflowed with 63Sn-37Pb solder.

Abstract: A solder alloy containing indium, lead, silver and copper as its alloying constituents, and a soldering process employing the solder alloy. The solder alloy consists essentially of, by weight, about 50% to about 65% indium, about 0.5% to about 3.0% silver, up to about 3.0% copper, the balance lead and incidental impurities. The alloy preferably has a solidus temperature in a range of about 173° C. to about 178° C., and a liquidus temperature in a range of about 187° C. to about 196° C. As such, the alloy can be used in a reflow process with a peak reflow temperature of about 220° C. to about 240° C., and is therefore compatible with most circuit components and can be simultaneously reflowed with 63Sn-37Pb solder.

Abstract: A method for solder bumping a surface-mount circuit component, as well as electrically and mechanically connecting the component to a conductor on a substrate, and the components and assemblies formed thereby. The method generally entails forming a multilayer metal bump containing discrete layers, including at least one layer of a solder alloy, a first metallic layer having a sufficiently high melting point so as not to melt or deform at the reflow temperature of the solder alloy, and a second metallic layer containing at least one metal that is soluble in the solder alloy. During reflow, the first metallic layer does not collapse, while the solder layer and the second metallic layer readily flow and subsequently bond the first metallic layer to suitable structures on the component and substrate.

Abstract: A solder bumping method and structure for producing fine-pitch solder bump and which eliminate conventional process compatibility requirements for under bump metallurgy (UBM) and solder bump formation. The method generally entails forming an input/output pad on the surface of a semiconductor device, and then forming a metal layer on the input/output pad that will serve as the UBM of the solder bump. A plating seed layer is then formed on the UBM and on the surrounding surface of the device, after which a mask is formed on the plating seed layer and a via is formed in the mask to expose a portion of the plating seed layer overlying the UBM, and preferably portions of the plating seed layer not overlying the UBM. A solder material is then deposited on the portion of the plating seed layer exposed within the via.

Abstract: A method by which semiconductor wafers (10, 12) can be solder bonded to form a semiconductor device, such as a sensor with a micromachined structure (14). The method entails forming a solderable ring (18) on the mating surface of a device wafer (10), such that the solderable ring (18) circumscribes the micromachine (14) on the wafer (10). A solderable layer (20, 26, 28) is formed on a capping wafer (12), such that at least the mating surface (24) of the capping wafer (12) is entirely covered by the solderable layer (20, 26, 28). The solderable layer (20, 26, 28) can be formed by etching the mating surface (24) of the capping wafer (12) to form a recess (16) circumscribed by the mating surface (24), and then forming the solderable layer (26) to cover the mating surface (24) and the recess (16) of the capping wafer (12).

Abstract: A lead-free solder alloy suitable for forming solder joints of a surface-mount integrated circuit device, such as a flip chip. The solder alloy has a sufficiently low liquidus temperature to achieve desirable reflow properties at temperatures of 240.degree. C. and less, and is therefore compatible with integrated circuit processes. The solder alloy has a sufficiently high solidus temperature to ensure that solder joints formed with the alloy exhibit suitable mechanical properties at application temperatures up to 150.degree. C. when mounting a component to a laminate substrate. The solder alloy generally contains, in weight percent, about 7 to about 11% indium, about 2.5 to about 3.5% silver, and about 0.5 to about 1.5% copper, the balance tin and incidental impurities.