Patents by Inventor Shingo Eguchi

Shingo Eguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230251515
    Abstract: A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side.
    Type: Application
    Filed: April 13, 2023
    Publication date: August 10, 2023
    Inventors: Shingo EGUCHI, Hideaki KUWABARA, Kazune YOKOMIZO
  • Patent number: 11710760
    Abstract: One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: July 25, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koji Kusunoki, Shingo Eguchi, Takayuki Ikeda
  • Patent number: 11672152
    Abstract: Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: June 6, 2023
    Inventors: Daiki Nakamura, Shingo Eguchi, Tomoya Aoyama, Nozomu Sugisawa, Junya Maruyama, Kazuhiko Fujita, Masataka Sato, Susumu Kawashima
  • Publication number: 20230170444
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Application
    Filed: January 13, 2023
    Publication date: June 1, 2023
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo EGUCHI, Mitsuo MASHIYAMA, Masatoshi KATANIWA, Hironobu SHOJI, Masataka NAKADA, Satoshi SEO
  • Patent number: 11635647
    Abstract: A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side.
    Type: Grant
    Filed: August 17, 2022
    Date of Patent: April 25, 2023
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shingo Eguchi, Hideaki Kuwabara, Kazune Yokomizo
  • Patent number: 11621407
    Abstract: A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: April 4, 2023
    Inventors: Shunpei Yamazaki, Shingo Eguchi
  • Patent number: 11588137
    Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a pixel including a microlens array and a light-emitting device. The light-emitting device emits first light. The microlens array collects the first light. The microlens array includes a plurality of microlenses. The microlenses have a cross section having a shape with which they can be arranged with a filling factor higher than that of a circle on a plane parallel to the light-emitting device. The microlenses have a curved surface on a plane orthogonal to the plane parallel to the light-emitting device. The convex side of the curved surface faces the light-emitting device.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: February 21, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Shingo Eguchi, Koji Kusunoki
  • Publication number: 20230016214
    Abstract: A highly reliable display apparatus is provided. In an EL display apparatus including a specific pixel having a function of adding data, a storage node is provided in the pixel, and first data can be held in the storage node. In the pixel, second data is added to the first data through capacitive coupling, whereby third data can be generated. A light-emitting device operates in accordance with the third data. In the pixel, a light-emitting device that requires a high voltage for light emission or a light-emitting device to which application of a high voltage is preferred is provided.
    Type: Application
    Filed: September 20, 2022
    Publication date: January 19, 2023
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koji Kusunoki, Shingo Eguchi
  • Patent number: 11557697
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Grant
    Filed: August 18, 2021
    Date of Patent: January 17, 2023
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
  • Publication number: 20230006164
    Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
    Type: Application
    Filed: September 9, 2022
    Publication date: January 5, 2023
    Inventors: Shingo EGUCHI, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
  • Publication number: 20220390787
    Abstract: A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side.
    Type: Application
    Filed: August 17, 2022
    Publication date: December 8, 2022
    Inventors: Shingo EGUCHI, Hideaki KUWABARA, Kazune YOKOMIZO
  • Publication number: 20220367775
    Abstract: A display unit with high resolution is provided. A display unit with high display quality is provided. A display unit includes a transistor, a light-emitting diode, a first conductive layer over the transistor and electrically connected to the transistor, a second conductive layer over the first conductive layer and electrically connected to the light-emitting diode, a first insulating layer over the transistor, and a second insulating layer over the first insulating layer. The top surface of the first conductive layer is substantially level with the top surface of the first insulating layer, and the bottom surface of the second conductive layer is substantially level with the bottom surface of the second insulating layer. The first insulating layer and the second insulating layer are bonded to each other, and the first conductive layer and the second conductive layer are bonded to each other.
    Type: Application
    Filed: October 29, 2020
    Publication date: November 17, 2022
    Inventors: Shunpei YAMAZAKI, Koji KUSUNOKI, Shingo EGUCHI, Takayuki IKEDA
  • Patent number: 11469387
    Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: October 11, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shingo Eguchi, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
  • Publication number: 20220310973
    Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.
    Type: Application
    Filed: April 13, 2022
    Publication date: September 29, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroki ADACHI, Shingo EGUCHI
  • Patent number: 11450694
    Abstract: A highly reliable display apparatus is provided. In an EL display apparatus including a specific pixel having a function of adding data, a storage node is provided in the pixel, and first data can be held in the storage node. In the pixel, second data is added to the first data through capacitive coupling, whereby third data can be generated. A light-emitting device operates in accordance with the third data. In the pixel, a light-emitting device that requires a high voltage for light emission or a light-emitting device to which application of a high voltage is preferred is provided.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: September 20, 2022
    Inventors: Shunpei Yamazaki, Koji Kusunoki, Shingo Eguchi
  • Patent number: 11442302
    Abstract: A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: September 13, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shingo Eguchi, Hideaki Kuwabara, Kazune Yokomizo
  • Publication number: 20220255045
    Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side.
    Type: Application
    Filed: June 29, 2020
    Publication date: August 11, 2022
    Inventors: Shunpei YAMAZAKI, Daiki NAKAMURA, Ryo HATSUMI, Rai SATO, Shingo EGUCHI, Koji KUSUNOKI
  • Publication number: 20220246889
    Abstract: A novel light-emitting device that is highly convenient, useful, or reliable is provided. A novel functional panel that is highly convenient, useful, or reliable is provided. The light-emitting device includes an insulating film, a group of structure bodies, a layer containing a light-emitting material, a first electrode, and a second electrode. The group of structure bodies includes a structure body and a different structure body, a first distance is provided between the different structure body and the structure body, the insulating film includes a first surface, the structure body includes a sidewall, the sidewall forms a first angle with the first surface, and the first angle is greater than 0° and less than or equal to 90°.
    Type: Application
    Filed: June 24, 2020
    Publication date: August 4, 2022
    Inventors: Shunpei YAMAZAKI, Daiki NAKAMURA, Ryo HATSUMI, Rai SATO, Shingo EGUCHI
  • Publication number: 20220238836
    Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.
    Type: Application
    Filed: January 21, 2022
    Publication date: July 28, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenichi Okazaki, Shingo Eguchi, Hiroki Adachi
  • Patent number: 11355382
    Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: June 7, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Seiji Yasumoto, Masataka Sato, Shingo Eguchi, Kunihiko Suzuki