Abstract: According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor.

Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.

Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.

Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.

Abstract: A piezoelectric device which is a MEMS device is provided. In the device, the entire silicon layer of the SOI substrate is a p-type region. A plurality of n-type regions are formed in the silicon layer so as to be exposed to the upper surface of the silicon layer and spaced from each other. A piezoelectric film made of AlN is provided on the SOI substrate so as to contact the n-type region, and a conductor film made of aluminum is provided on the piezoelectric film. Thereby, the n-type region functions as a lower electrode and the conductor film functions as an upper electrode.

Abstract: A surface acoustic wave device includes a package having a cavity, a SAW chip housed in the cavity, a resin sealing the cavity, and a metal thin film provided on the resin.

Abstract: A package for an electronic device includes a cavity that houses an electronic element, and grooves or holes formed on or in sidewalls that define the cavity. The grooves or holes extend from an open side of the cavity so as not to reach a bottom side of the package.

Abstract: An electronic device includes: a substrate; a first film provided on a major surface of the substrate; and a crystalline second film covering at least a part of the end surface and provided on the first film and the substrate. The end surface has an inclined surface which is inclined to the major surface of the substrate. The inclined surface has a curved surface whose slope becomes gentle with getting closer to the substrate.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, a package housing the surface acoustic wave chip, and electrode patterns provided on a bottom surface of the package. The bottom surface of the package is wider than a top surface of the package. The electrode patterns are away from edges of the bottom surface of the package.

Abstract: A method of fabricating electronic parts includes the steps of: mounting electronic elements in regular cavities that are two-dimensionally arranged on a baseboard on which dummy cavities are provided so as to surround the regular cavities, and covering a top of the baseboard with a resin sheet.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, and a package housing the surface acoustic wave chip, a first surface of the package including an opening of the cavity being wider than a second surface of the package opposite to the first surface.

Abstract: An electronic device having a cavity, which is included in a package, can be sealed with a lid surely and efficiently. A SAW device comprises a SAW chip that is fixed to a plane portion of a stem. A rear surface of the package is hermetically sealed with glass. An opening of a cavity provided on an upper surface of the package is hermetically sealed by a lid with seam welding. Glass is filled to reach the backside of flange of the stem. Such glass prevents the flange from being distorted by the weight of roller electrodes, and keeps the lid and the flange in contact with each other. In addition, the glass serves as a support, and prevents the current from leaking. Therefore, the lid and the flange are sufficiently and surely welded together.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, a package housing the surface acoustic wave chip, and electrode patterns provided on a bottom surface of the package. The bottom surface of the package is wider than a top surface of the package. The electrode patterns are away from edges of the bottom surface of the package.

Abstract: A surface acoustic wave device includes a package having a cavity, a SAW chip housed in the cavity, a resin sealing the cavity, and a metal thin film provided on the resin.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, and a package housing the surface acoustic wave chip, a first surface of the package including an opening of the cavity being wider than a second surface of the package opposite to the first surface.

Abstract: A package for an electronic device includes a cavity that houses an electronic element, and grooves or holes formed on or in sidewalls that define the cavity. The grooves or holes extend from an open side of the cavity so as not to reach a bottom side of the package.

Abstract: A method of fabricating electronic parts includes the steps of: mounting electronic elements in regular cavities that are two-dimensionally arranged on a baseboard on which dummy cavities are provided so as to surround the regular cavities, and covering a top of the baseboard with a resin sheet.