Abstract: Provided is a brake control apparatus for a vehicle which detects an amount of brake-pedal operation by means of an electric signal, and then calculates a braking force demanded by a driver from the electric signal, and thereby generates the demanded braking force. A control mode for a braking force is switched from a normal control mode to a stationary-vehicle control mode, if a determination that the vehicle is in a stationary state is followed by another determination that an electric signal corresponding to an actual braking force exceeds a command value for a stationary-vehicle braking force while the vehicle is in the stationary state. The control mode for a braking force is switched from the stationary-vehicle control mode to the normal control mode, if it is determined that the demanded braking force becomes smaller than the command value for the stationary-vehicle braking force.

Abstract: A brake control system for a vehicle includes a first controller having a first brake operation quantity sensor and a second controller executing a different control from that of the first controller and having a second operation quantity sensor. The second controller may include a master pressure acquisition unit for acquiring a master pressure and a failure detection unit for detecting a failure of the first controller on the basis of the brake operation quantity detected by the second brake operation quantity sensor and the master pressure acquired by the master pressure acquisition unit.

Abstract: A brake controller for controlling a plurality of actuators for driving braking members of a plurality of brakes is disclosed, where the controller includes a performance setting unit for setting desired performance required of the brakes; a braking force calculating unit for calculating a desired braking force to be produced by each brake; a drive ratio calculating unit for calculating drive ratios at which the actuators operate to achieve the desired performance and to make the plurality of brakes produce a braking force equal to or nearly equal to the desired braking force; and a drive signal output unit for providing the actuators drive signals corresponding to the drive ratios for the actuators.

Abstract: An object of the present invention is to provide a steering assist system capable of showing a driver an appropriate direction of steering operation in advance and correctly, and without impairing safety, and shortening an operation time during collision avoidance, in particular, reducing an idle running time. It is another object of the present invention to provide a vehicle mounted with such a steering assist system. A recommended steering direction determination unit 102 determines a recommended steering direction using measurements of a lateral position taken by an obstacle position measurement unit 101. After a collision determination unit 103 determines that risk of collision is high, a steering assist torque is generated using a first assist torque command value set by a first torque calculation unit 105.

Abstract: According to the present invention, an obstacle detection means detects an obstacle. An action range presumption unit presumes an action range in which the obstacle can exist in a predetermined time if the obstacle accelerates, decelerates, or turns on the basis of the moving performance of the obstacle detected by the obstacle detection means. An action probability presumption unit presumes a probability of the obstacle existing in the action range on the basis of the conditions of the road on which a host vehicle and the obstacle exist and the action history of the obstacle. A driving operation support unit determines a target locus which prevents the host vehicle from moving into the presumed action range or to a position where the action probability is high and generates vehicle control information necessary for making the host vehicle run along the target locus. The driving operation support unit gives the driver instructions and warnings and assists the driver with driving operation support operations.

Abstract: A semiconductor device which, even when a vertical transistor is adopted, is able to prevent a product yield from decreasing and performance from deteriorating, and at the same time, to achieve high-density integration of chips and high performance. The semiconductor device includes: a semiconductor substrate; a tower-like gate pillar formed on the semiconductor substrate via an insulation layer and including a channel region formed so as to be positioned between impurity diffusion regions in a vertically extended direction with respect to a principal side of the substrate; a gate insulation film formed on an outer surface of the gate pillar; and a gate electrode film including multiple conductive layers formed on an outer surface of the gate insulation film.

Abstract: In a semiconductor device including n-channel field-effect transistors and p-channel field-effect transistors, in which the channel direction is parallel to a axis, a semiconductor device in provided which has excellent drain current characteristics at both n-channel field-effect transistors and p-channel field-effect transistors. In a semiconductor device including n-channel field-effect transistors N1 and N2 and p-channel field-effect transistors P1 and P2, a stress control film that covers the gate electrodes of the n-channel and p-channel field-effect transistors from upper surfaces thereof is not formed, or is made thin, above shallow trench isolations adjacent to active regions formed by the p-channel field-effect transistors P1 and P2, in a case where the stress control film is a tensile film stress. Thus, improvement of the drain currents of both the n-channel and p-channel transistors can be expected. For this reason, it is possible to improve overall characteristics.

Abstract: In semiconductor devices, a semiconductor device is provided which is high in reliability while suppressing changes in characteristics such as threshold voltages. In a semiconductor device which has a gate dielectric film above a semiconductor substrate and also has above the gate dielectric film a gate electrode film made of silicon germanium chosen as its main constituent material, or alternatively in a semiconductor device which has beneath the gate dielectric film a channel made of silicon as its main constituent material and which has below the channel a channel underlayer film made of silicon germanium as its main constituent material, a specifically chosen dopant, such as cobalt (Co) or carbon (C) or nitrogen (N), is added to the gate electrode and the channel underlayer film, for use as the unit for suppressing diffusion of germanium in the gate electrode or in the channel underlayer film.

Abstract: A semiconductor device which, even when a vertical transistor is adopted, is able to prevent a product yield from decreasing and performance from deteriorating, and at the same time, to achieve high-density integration of chips and high performance.

Abstract: In semiconductor devices, a semiconductor device is provided which is high in reliability while suppressing changes in characteristics such as threshold voltages. In a semiconductor device which has a gate dielectric film above a semiconductor substrate and also has above the gate dielectric film a gate electrode film made of silicon germanium chosen as its main constituent material, or alternatively in a semiconductor device which has beneath the gate dielectric film a channel made of silicon as its main constituent material and which has below the channel a channel underlayer film made of silicon germanium as its main constituent material, a specifically chosen dopant, such as cobalt (Co) or carbon (C) or nitrogen (N), is added to the gate electrode and the channel underlayer film, for use as the unit for suppressing diffusion of germanium in the gate electrode or in the channel underlayer film.

Abstract: In a semiconductor device including n-channel field-effect transistors and p-channel field-effect transistors, in which the channel direction is parallel to a axis, a semiconductor device in provided which has excellent drain current characteristics at both n-channel field-effect transistors and p-channel field-effect transistors. In a semiconductor device including n-channel field-effect transistors N1 and N2 and p-channel field-effect transistors P1 and P2, a stress control film that covers the gate electrodes of the n-channel and p-channel field-effect transistors from upper surfaces thereof is not formed, or is made thin, above shallow trench isolations adjacent to active regions formed by the p-channel field-effect transistors P1 and P2, in a case where the stress control film is a tensile film stress. Thus, improvement of the drain currents of both the n-channel and p-channel transistors can be expected. For this reason, it is possible to improve overall characteristics.