Abstract: A liquid ejecting head includes: a plurality of head chips having a nozzle surface; a thermally conductive holder holding the plurality of head chips; a thermally conductive flow path structure provided with a flow path of a liquid supplied to the plurality of head chips; and a planar heater disposed between the holder and the flow path structure and along a direction parallel to the nozzle surface, in which the heater overlaps the plurality of head chips in a plan view.

Abstract: A liquid ejecting head includes: head chips including a first-head-chip and a second-head-chip; a holder holding the head chips; and a heater along a direction parallel to a nozzle surface. The first-head-chip and the second-head-chip are disposed to be offset from each other in both a first-direction and a second-direction parallel to the nozzle surface and intersecting with each other. When a first-side is one of the four sides of a virtual rectangle circumscribing the aggregate of the head chips and a second-side and a third-side are coupled to both ends of the first-side, the first-head-chip is in contact with the first-side and the third-side and the second-head chip is in contact with the second-side. The heater overlaps the head chips. A first-region surrounded by the first-side, the second-side, the first-head-chip, and the second-head-chip includes a first-outside-part positioned outside the outer edge of the heater.

Abstract: A liquid ejecting head supported by a support body includes: a first head chip; a holder having a holding portion holding the first head chip and a flange portion; and a heater heating the holding portion, in which the holding portion has a heat receiving portion receiving heat from the heater, and a shortest path of heat transferred through the holder from the heat receiving portion to the flange portion is bent or curved at two or more points.

Abstract: A noise generation cause identifying method and a noise generation cause identifying device are provided. A response correcting process corrects a sound signal obtained through a sound signal obtaining process based on obtained model information so that a frequency response of the obtained sound signal approaches a frequency response of a learning sound signal. A variable obtaining process obtains a variable output from a map by inputting the corrected sound signal to the map. A cause identifying process identifies a generation cause of a sound picked up by a microphone using the variable obtained through the variable obtaining process.

Abstract: Supply system include a first vessel containing the precursor, a second vessel, a first gas conduit fluidically connecting the first vessel to the second vessel, wherein a pressure reduction device and a flow control device are fluidically mounted therein, a second gas conduit fluidically connecting the second vessel to a point of use, and a pressure gauge downstream the pressure reduction device for measuring a partial pressure of the precursor in the second vessel, wherein the partial pressure of the precursor in the second vessel is at a pressure lower than the saturated vapor pressure of the precursor at the temperature of the second vessel and higher than an inlet pressure requirement of the flow control device at the point of use. Methods for using the supply system are also disclosed.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.

Abstract: A silicon/carbon composite or a silicon alloy/carbon composite is formed with a homogeneous silicon-containing thin film or silicon-containing alloy thin film on the surface of a conductive carbon material, where the composite may be used for a large-capacity electrical storage device when used as a negative electrode material for forming an electrical storage device negative electrode, and exhibits excellent charge-discharge cycle characteristics. A carbon-containing thin film is formed on a surface of a conductive carbon material by chemical vapor deposition (CVD) that utilizes a carbon-containing gas and a silicon-containing thin film or a silicon-containing alloy thin film is formed on the conductive carbon material by chemical vapor deposition (CVD) that utilizes a silicon-containing gas alone, or utilizes a silicon-containing gas and a carbon-containing gas.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.

Abstract: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide metal thin film layer is deposited onto the substrate.

Abstract: Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide metal thin film layer is deposited onto the substrate.