Patents by Inventor Shingo Yanagida

Shingo Yanagida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6245820
    Abstract: A medicine for the treatment of Meniere's disease containing, as an active ingredient, erythritol which is capable of significantly reducing the endolymphatic pressure by oral administration of a therapeutically effective amount of erythritol as an active substance.
    Type: Grant
    Filed: April 14, 2000
    Date of Patent: June 12, 2001
    Assignee: Nikken Chemicals, Co., LTD
    Inventors: Jun Kojima, Shingo Yanagida, Takeshi Otani
  • Patent number: 5124772
    Abstract: In a power semiconductor device such as an IGBT, a fifth region of n conductivity type is provided. The fifth region is formed in a portion of a second region (drain region) contacting an insulating layer below the gate layer. The fifth region contacts a third region (base region) and has an impurity concentration higher than that of the second region. Therefore, even when a carrier life time is sufficiently short, an electron distribution density can be kept high in the entire fifth region and the second region under the third region (base region) near the fifth region, and the localization of a hole current is moderated (in a case of a p-type base and an n-type drain). As a result, a maximum controllable current is increased, and a wide safe operation area can be obtained.
    Type: Grant
    Filed: September 10, 1990
    Date of Patent: June 23, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Makoto Hideshima, Tetsujiro Tsunoda, Masashi Kuwahara, Shingo Yanagida
  • Patent number: 5115300
    Abstract: A high-power semiconductor device comprises a overcurrent detecting terminal. One of conductive layers selectively adhered to a substrate of the semiconductor device is thinner than the other conductive layers. One of terminals for an electrode of the semiconductor element of the high-power semiconductor device is connected to one end of the thinner conductive layer. The overcurrent detecting terminal is electrically connected to said electrode, and to the other end of the thinner conductive layer. A potential difference between the terminal and the overcurrent detecting terminal is measured, in order to detect a current, to prevent an overcurrent from flowing through the semiconductor element.
    Type: Grant
    Filed: December 5, 1990
    Date of Patent: May 19, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shingo Yanagida, Tetsujiro Tsunoda