Patents by Inventor Shin Hwa Li

Shin Hwa Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure having an improved pre-metal dielectric stack and method for forming the same
    Patent number: 6861352
    Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, a layer of undoped silicate glass disposed on the dielectric layer, a layer of borophosphorous silicate glass on the layer of undoped silicate glass, and a planar dielectric layer disposed on the layer of borophosphorous silicate glass, the layers of undoped silicate glass, borophosphorous silicate glass, and planar dielectric together forming a pre-metal dielectric stack. The planar dielectric may include plasma-enhanced tetraethyl orthosilicate.
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: March 1, 2005
    Assignee: STMicroelectronics, Inc.
    Inventors: Shin Hwa Li, Annie Tissier
  • Semiconductor structure having an improved pre-metal dielectric stack and method for forming the same
    Publication number: 20040137713
    Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, a layer of undoped silicate glass disposed on the dielectric layer, a layer of borophosphorous silicate glass on the layer of undoped silicate glass, and a planar dielectric layer disposed on the layer of borophosphorous silicate glass, the layers of undoped silicate glass, borophosphorous silicate glass, and planar dielectric together forming a pre-metal dielectric stack. The planar dielectric may include plasma-enhanced tetraethyl orthosilicate.
    Type: Application
    Filed: December 22, 2003
    Publication date: July 15, 2004
    Applicant: STMicroelectronics Inc.
    Inventors: Shin Hwa Li, Annie Tissier
  • Semiconductor structure having an improved pre-metal dielectric stack and method for forming the same
    Patent number: 6707134
    Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, a layer of undoped silicate glass disposed on the dielectric layer, a layer of borophosphorous silicate glass on the layer of undoped silicate glass, and a planar dielectric layer disposed on the layer of borophosphorous silicate glass, the layers of undoped silicate glass, borophosphorous silicate glass, and planar dielectric together forming a pre-metal dielectric stack. The planar dielectric may include plasma-enhanced tetraethyl orthosilicate.
    Type: Grant
    Filed: August 3, 2000
    Date of Patent: March 16, 2004
    Assignee: STMicroelectronics, Inc.
    Inventors: Shin Hwa Li, Annie Tissier