Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

Abstract: A power supply device includes a plurality of power supply units connected in parallel, and includes a positive electrode-side junction formed by the joining of positive electrode-side terminals of the plurality of power supply units and a negative electrode-side junction formed by the joining of negative electrode-side terminals of the plurality of power supply units. Each of the plurality of power supply units includes a battery unit, and a first relay that is provided between one of the positive and negative electrode-side junctions and the battery unit and is electrically disconnectably connected in series to the battery unit. Each of the plurality of power supply units includes a resistive element of which one end is connected between the first relay, which is connected to one of a positive electrode terminal and a negative electrode terminal of the battery unit, and the battery unit.

Abstract: Disclosed herein is a solid-state imaging element including: a transfer section configured to transfer charge generated simultaneously by a photoelectric conversion section in all pixels to a memory section and have a metal gate; and a light-shielding section formed by filling a metal into a groove portion formed by digging an interlayer insulating film around the transfer section.

Abstract: There is provided a solid-state image pickup device including a semiconductor substrate, and a plurality of pixel portions that are provided on the semiconductor substrate. Each of the pixel portions includes a photoelectric converting unit that generates a charge on the basis of incident light, a memory unit that accumulates the charge generated by the photoelectric converting unit, a light shielding portion that shields at least the memory unit from light, a digging portion that digs into the semiconductor substrate between the photoelectric converting unit and the memory unit and is formed of a light shielding material, and a transmitting unit that transmits the charge from the photoelectric converting unit to the memory unit, by forming a channel for transmission in the digging portion.

Abstract: A solid-state image pickup device has photodiodes, each of which includes an N-type region formed in a semiconductor substrate, a first silicon carbide layer formed above the N-type region, and a P-type region including a first silicon layer formed above the first silicon carbide layer and doped with boron. A fabrication process of such a solid-state image pickup device is also disclosed.

Abstract: A virtual network control method, for adaptively controlling a topology of a virtual network formed on a physical network in response to environmental changes in the virtual network, is provided with: a step of storing the Langevin equation, as a fluctuation equation, which models the dynamics of the topology of the virtual network as a variable for controlling the number of wavelength paths on the physical network; a step of designing control parameters included in the fluctuation equation; and a step of controlling the topology of the virtual network by applying the control parameters to the fluctuation equation to change an order parameter included in the fluctuation equation when environmental changes occur in the virtual network, and by transitioning the solution of the fluctuation equation between attractors determined by the deterministic term of the fluctuation equation due to the fluctuation term of the fluctuation equation.

Abstract: A solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

Abstract: A power supply apparatus includes: a plurality of power supply units; a positive polarity coupling portion; and a negative polarity coupling portion; each of the power supply units is provided with: battery units; first relays connected in series to the battery units, capable of disconnecting electrical connection between the battery units and any one of the positive polarity coupling portion and the negative polarity coupling portion; resistor elements having one ends which are connected to the battery units between the battery units and the first relay; a resistor coupling portion; and a second relay connected to the resistor coupling portion, capable of disconnecting electrical connection between the resistor coupling portion and any one of the positive polarity coupling portion and the negative polarity coupling portion which is connected to the first relays, the second relay having fewer in number than the number of the power supply units.

Abstract: There is provided a solid-state image pickup device including a semiconductor substrate, and a plurality of pixel portions that are provided on the semiconductor substrate. Each of the pixel portions includes a photoelectric converting unit that generates a charge on the basis of incident light, a memory unit that accumulates the charge generated by the photoelectric converting unit, a light shielding portion that shields at least the memory unit from light, a digging portion that digs into the semiconductor substrate between the photoelectric converting unit and the memory unit and is formed of a light shielding material, and a transmitting unit that transmits the charge from the photoelectric converting unit to the memory unit, by forming a channel for transmission in the digging portion.

Abstract: A power supply apparatus includes: a plurality of power supply units; a positive polarity coupling portion; and a negative polarity coupling portion; each of the power supply units is provided with: battery units; first relays connected in series to the battery units, capable of disconnecting electrical connection between the battery units and any one of the positive polarity coupling portion and the negative polarity coupling portion; resistor elements having one ends which are connected to the battery units between the battery units and the first relay; a resistor coupling portion; and a second relay connected to the resistor coupling portion, capable of disconnecting electrical connection between the resistor coupling portion and any one of the positive polarity coupling portion and the negative polarity coupling portion which is connected to the first relays, the second relay having fewer in number than the number of the power supply units.

Abstract: A virtual network control method, for adaptively controlling a topology of a virtual network formed on a physical network in response to environmental changes in the virtual network, is provided with: a step of storing the Langevin equation, as a fluctuation equation, which models the dynamics of the topology of the virtual network as a variable for controlling the number of wavelength paths on the physical network; a step of designing control parameters included in the fluctuation equation; and a step of controlling the topology of the virtual network by applying the control parameters to the fluctuation equation to change an order parameter included in the fluctuation equation when environmental changes occur in the virtual network, and by transitioning the solution of the fluctuation equation between attractors determined by the deterministic term of the fluctuation equation due to the fluctuation term of the fluctuation equation.

Abstract: A power supply device includes a plurality of power supply units connected in parallel, and includes a positive electrode-side junction formed by the joining of positive electrode-side terminals of the plurality of power supply units and a negative electrode-side junction formed by the joining of negative electrode-side terminals of the plurality of power supply units. Each of the plurality of power supply units includes a battery unit, and a first relay that is provided between one of the positive and negative electrode-side junctions and the battery unit and is electrically disconnectably connected in series to the battery unit. Each of the plurality of power supply units includes a resistive element of which one end is connected between the first relay, which is connected to one of a positive electrode terminal and a negative electrode terminal of the battery unit, and the battery unit.

Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

Abstract: This invention discloses a semiconductor device including an insulating film having a recess therein; an electric conductor formed inside the recess; a manganese silicate film formed on an upper surface of the conductor, the manganese silicate film being formed of a reaction product of a manganese with a silicon oxide insulating film. A method for manufacturing such a semiconductor device is also described.

Abstract: A solid-state image pickup device has photodiodes, each of which includes an N-type region formed in a semiconductor substrate, a first silicon carbide layer formed above the N-type region, and a P-type region including a first silicon layer formed above the first silicon carbide layer and doped with boron. A fabrication process of such a solid-state image pickup device is also disclosed.

Abstract: A semiconductor device including a substrate, a metal wiring on the substrate, an insulation film on the substrate covering the metal wiring, a connection hole in the insulation film which extends to a portion of the metal wiring, a via in the connection hole, and an alloy layer. The metal wiring includes a first metallic material, the alloy layer comprises a portion of the metal wiring and a second metallic material which is different than the first metallic material, and the via extends to the alloy layer.

Abstract: The present invention relates to a preparation for sterilizing or disinfecting a tissue which has an excellent tissue sterilizing or disinfecting ability and is suitable for therapeutic or prophylactic treatment of various diseases caused by a microorganism such as a bacterium or a virus and a method for sterilizing or disinfecting a tissue. The present invention relates to a preparation for sterilizing or disinfecting a tissue and an agent for therapeutic or prophylactic treatment of a periodontal disease, characterized by containing a gas in a nanobubble state. Furthermore, the present invention relates to the above-mentioned preparation for sterilizing or disinfecting a tissue, characterized in that the above-mentioned gas in a nanobubble state is ozone. Furthermore, the present invention relates to a liquid preparation for sterilizing or disinfecting a tissue, characterized by comprising ozone-nanobubble water.

Abstract: A method of manufacturing a semiconductor device includes the steps of: forming recesses (a via hole and wiring grooves) in a insulation film; forming a seal layer on inside surfaces of the recesses by using a gas based on a silane having an alkyl group as a precursor; applying EB-cure or UV-cure to the seal layer; and filling up the recesses with a conductor.