Abstract: An optical path coupling member aligns an optical axis directed to a light condensing member of the first wavelength light having a shortest wavelength with that of the third wavelength light having a longest wavelength. A diffraction element condenses +2nd order diffracted light of the first wavelength light and +1st order diffracted light of the second wavelength light and third wavelength light into a first photodetector, the ?2nd order diffracted light of the first wavelength light and ?1st order diffracted light of the third wavelength light into a second photodetector, and ?1st order diffracted light of the remaining second wavelength light into a photodetector, using ±2nd order diffracted light of the first wavelength light and ±1st order diffracted light of the second wavelength light and third wavelength light as signal light from an optical information recording medium. Consequently, the overall size of the optical pickup apparatus is reduced.

Abstract: There is provided a light receiving circuit capable of preventing an output variation of the light receiving circuit due to a change in ambient temperature with a simple configuration. The light receiving circuit is provided with a photodiode 4 for LD power monitoring and an I-V amplifier 5 connected with a feedback resistor 13, wherein a light receiving section 16 of the photodiode 4 is covered with a protective film 19. Temperature dependences between a light transmittance of the protective film 19 in accordance-with a shift of a wavelength of a laser beam due to a change in ambient temperature, and a resistance value of the feedback resistor 13 are set in such a way that they may be mutually compensated and an output voltage from the light receiving circuit may be constant for a temperature change.

Abstract: The optical pickup of this invention includes a diffraction grating for dividing a light beam emitted from a semiconductor laser into a main beam, a precedent sub beam and a subsequent sub beam; a hologram element for dividing reflected light beams of the main beam, the precedent sub beam and the subsequent sub beam from an optical recording medium respectively into first through eighth main beams, first through eighth precedent sub beams and first through eighth subsequent sub beams; a main beam detector for receiving the first through eighth main beams; a precedent sub beam detector for receiving the first through eighth precedent sub beams; and a subsequent sub beam detector for receiving the first through eighth subsequent sub beams.

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.

Abstract: An optical pickup comprises: first and second semiconductor lasers (11, 14); a hologram element (17) for diffracting light reflected by an optical information recording medium (9 or 12); and a plurality of photodetectors (18-23). The hologram element (17) has two or more different diffraction regions. The plurality of photodetectors (18-23) are provided away from the first and second semiconductor lasers (11, 14) at both sides thereof along an extended line of a line between light emission positions of the first and second semiconductor lasers (11, 14). The diffracted light generated from the light beam of the first wavelength (10) by the hologram element (17) and the diffracted light generated from the light beam of the second wavelength (13) by the hologram element (17) are collected at substantially the same position at one side, and part (18, 19) of the plurality of photodetectors (18-23) are provided at the position.

Abstract: There is provided an optical pickup compliant with a three-beam method, a phase difference method, a push-pull method and a three-beam push-pull method, comprising: an emission light source (105) for emitting two or more light components of different wavelengths; a diffraction element (107); a light collector (103); a hologram element (108); a plurality of photodetectors (206); and operation means for performing an operation on outputs of the plurality of photodetectors (206). The plurality of photodetectors (206) are at least eight photodetectors (P1 to P8) which are necessary for the execution of the three-beam method, the phase difference method, and the push-pull method. The operation means includes a switch (212) for switching between a terminal for obtaining a sub signal of the three-beam push-pull method and a terminal for obtaining a tracking signal of the three-beam method.

Abstract: An electrophotographic photoreceptor having an interlayer between an electroconductive support and a photoreceptive layer, wherein the interlayer contains an N-type semiconductive particle and a binder and a Benard cell is formed in the interlayer.

Abstract: An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.

Abstract: A semiconductor device manufacturing system for manufacturing a semiconductor device on a wafer, comprising: a first exposure apparatus for exposing the wafer using a light source while moving the wafer with a predetermined interval; and a second exposure apparatus for exposing the wafer by irradiating a plurality of electron beams on the wafer, the plurality of electron beams having an interval of substantially N times or 1/N times, where N is a natural number, of the predetermined interval.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams includes a multi-axis electron lens having a plurality of lens openings operable to converge the electron beams independently of each other, the plurality of lens openings having different shapes.

Abstract: It is an object of the invention to provide a diffraction element having a simple configuration for detecting light beams of different wavelengths that are irradiated in order to store or reproduce information with respect to different types of optical disks, and an optical pickup head device. The diffraction element includes a first diffraction grating for diffracting a first light beam having a first wavelength &lgr;1 so as to emit a first first-order diffracted light beam, and a second diffraction grating for diffracting a second light beam having a second wavelength &lgr;2, which is different from the first wavelength &lgr;1, so as to emit a second first-order diffracted light beam. The first diffraction grating and the second diffraction grating are arranged so that the first first-order diffracted light beam diffracted by the first diffraction grating and the second first-order diffracted light beam diffracted by the second diffraction grating are focused onto a same photodetector.

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: the first electromagnetic lens system for making the electron beam incident substantially perpendicularly on the first plane be incident on the second plane substantially perpendicularly; the second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens for correcting rotation of the electron beam caused by the first electromagnetic lens system and/or the second electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer, that is to be irradiated with the electron beam; and a deflection-correction optical system for correcting deflection aberration caused by the deflection system.

Abstract: An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams has a multi-axis that includes: a plurality of magnetic conductive member arranged to be substantially parallel to each other, the magnetic conductive members having a plurality of openings; and a non-magnetic conductive member provided between the magnetic conductive members, the non-magnetic conductive member having a plurality of through holes. The openings of the magnetic conductive members and the through holes of the non-magnetic conductive members form together a plurality of lens openings operable to converge the electron beams independently of each other by allowing the electron beams to pass therethrough, respectively.

Abstract: The optical pickup of this invention includes a diffraction grating for dividing a light beam emitted from a semiconductor laser into a main beam, a precedent sub beam and a subsequent sub beam; a hologram element for dividing reflected light beams of the main beam, the precedent sub beam and the subsequent sub beam from an optical recording medium respectively into first through eighth main beams, first through eighth precedent sub beams and first through eighth subsequent sub beams; a main beam detector for receiving the first through eighth main beams; a precedent sub beam detector for receiving the first through eighth precedent sub beams; and a subsequent sub beam detector for receiving the first through eighth subsequent sub beams.

Abstract: An electrophotographic photoreceptor is disclosed. The photoreceptor has an interlayer between an electroconductive substrate and a photosensitive layer wherein the interlayer contains a particle and has a light absorbance of not more than 0.25 per micrometer of thickness at a wavelength of 1,000 nm. An image forming apparatus and a processing cartridge employing the photoreceptor are also disclosed.

Abstract: An electrophotographic photoreceptor having an interlayer between an electroconductive support and a photoreceptive layer, wherein the interlayer contains an N-type semiconductive particle and a binder and a Benard cell is formed in the interlayer.

Abstract: An electrophotoreceptor, comprises a conductive support; a photoreceptive layer, an intermediate layer provided between the conductive support and the photoreceptive layer, the intermediate layer containing N type semi-conductive fine particles and a binder resin, wherein the N type semi-conductive fine particles are subjected to plural surface treatments, and the final surface treatment is carried out employing a reactive organic silicon compound.

Abstract: An electrophotographic photoreceptor is disclosed. The photoreceptor has an interlayer between an electroconductive substrate and a photosensitive layer wherein the interlayer contains a particle and has a light absorbance of not more than 0.25 per micrometer of thickness at a wavelength of 1,000 nm.

Abstract: A semiconductor device manufacturing system for manufacturing a semiconductor device on a wafer, comprising: a first exposure apparatus for exposing the wafer using a light source while moving the wafer with a predetermined interval; and a second exposure apparatus for exposing the wafer by irradiating a plurality of electron beams on the wafer, the plurality of electron beams having an interval of substantially N times or 1/N times, where N is a natural number, of the predetermined interval.

Abstract: An electron beam exposure apparatus for exposing a wafer using an electron beam, including: a shaping unit for shaping a cross sectional shape of the electron beam so that the cross sectional shape has a rectangular cross-section that includes a first edge and a second edge, which is substantially perpendicular to the first edge; and a control unit connected to the shaping unit for determining at least one of a length of the second edge and an irradiation time of the electron beam based on a length of the first edge.