Abstract: According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

Abstract: According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

Abstract: According to one embodiment, a magnetoresistive element includes a first layer including a material as one of a nitride, an oxide, a carbide and a boride, a second layer as a magnetic layer on the first layer, a third layer as a nonmagnetic layer on the second layer, and a fourth layer as a magnetic layer on the third layer, magnetization directions of the second and fourth layers being a perpendicular direction in which the first, second, third and fourth layers are stacked. The first layer is thinner than a crystal grain size of the first layer in the perpendicular direction.