Abstract: A blue fluorescent light-emitting layer is provided in common for first and second subpixels, a green fluorescent light-emitting layer is provided in common for second and third subpixels, and a red light-emitting layer is provided in common for the second and fourth subpixels. In the second subpixel, an opposing surface distance is less than or equal to a Förster radius, and at least of the blue fluorescent light-emitting layer and the green fluorescent light-emitting layer are layered with the red light-emitting layer with a separation layer interposed therebetween.

Abstract: In an organic EL element equipped with an anode, a cathode, a luminescent layer, and an electron transport layer, the cathode includes a reflecting electrode. The electron transport layer includes a doped electron transport layer to which an n-type dopant material is added and a non-doped electron transport layer to which an n-type dopant material is not added. A first reflection surface that reflects light from the luminescent layer is provided at an interface between the doped electron transport layer and the non-doped electron transport layer.

Abstract: Provided is a scan vapor deposition metal mask with which a high-resolution, linear vapor deposition film pattern can be formed even on a large-sized substrate. Two first unit opening groups are included. The first unit opening groups are arranged by being shifted from each other in a Y direction so as not to be adjacent to each other in an X direction, while the first unit opening groups adjacent to each other in the Y direction are arranged by being shifted from each other in the X direction by ½ times a first opening pitch.

Abstract: An organic EL device of one aspect of the disclosure includes: a base material; an insulating layer provided with a recessed portion on an upper face thereof; and a light-emitting element including a reflective layer provided on at least a surface of the recessed portion, a filling layer having optical transparency and filling the inside of the recessed portion with the reflective layer interposed between the filling layer and the recessed portion, a first electrode having optical transparency and provided on at least an upper layer side of the filling layer, an organic layer containing at least a light-emitting layer provided on an upper layer of the first electrode, a second electrode having optical transparency and provided on an upper layer side of the organic layer, and an edge cover layer covering at least an end portion of the first electrode, wherein the organic electroluminescence device includes a plurality of unit light emitting regions separated from one another, an excavated portion is provided i

Abstract: Provided is a vapor deposition apparatus capable of suppressing the occurrence of relatively large smudges not intended by design. In this vapor deposition apparatus, a recessed portion is provided in a scanning direction of a substrate in a region between two emission openings adjacent to each other on a limiting plate side of a top plate.

Abstract: On a vapor deposition target surface of a vapor deposition target substrate placed on a substrate tray in a vapor deposition device, display regions on which vapor deposition particles are to be deposited are arranged in alignment to be apart from each other in a direction parallel with a scanning direction, and the substrate tray includes a blocking part configured to block the vapor deposition particles to be deposited onto regions adjacent to the display regions in a direction parallel with the scanning direction. This prevents a degree of freedom in designing of the vapor deposition target substrate from being restricted even in performing scan vapor deposition.

Abstract: A vapor deposition unit (1) includes a vapor deposition mask (50), a vapor deposition source (10), and a limiting plate unit (20). The limiting plate unit (20) includes (i) a plurality of first limiting plates (32) separated from each other in an X axis direction and (ii) a plurality of second limiting plates (42) disposed directly above the first limiting plates (32) in a plan view and separated from each other in the X axis direction. At least two second limiting plates (42) are arranged in the X axis direction for each first limiting plate (32).

Abstract: An organic EL element is provided that has a high light emission efficiency and that emits a plurality of light beams having respective wavelength ranges different from one another, the light beams including short wavelength light having a high chromaticity. An organic EL element (1) includes an exciton generating layer (7) and a guest layer (8) that are adjacent to each other.

Abstract: On a vapor deposition target surface of a vapor deposition target substrate placed on a substrate tray in a vapor deposition device, display regions on which vapor deposition particles are to be deposited are arranged in alignment to be apart from each other in a direction parallel with a scanning direction, and the substrate tray includes a blocking part configured to block the vapor deposition particles to be deposited onto regions adjacent to the display regions in a direction parallel with the scanning direction. This prevents a degree of freedom in designing of the vapor deposition target substrate from being restricted even in performing scan vapor deposition.

Abstract: An organic electroluminescence device according to an aspect of the disclosure includes a base material including one face provided with a recessed portion; and a light emitting element including a reflective layer provided on at least a surface of the recessed portion, a filling layer having optical transparency and filling the inside of the recessed portion with the reflective layer interposed between the filling layer and the recessed portion, a first electrode having optical transparency and provided on at least an upper-layer side of the filling layer, an organic layer containing at least a light emitting layer and provided on an upper layer of the first electrode, a second electrode having optical transparency and provided on an upper-layer side of the organic layer, and an edge cover layer covering at least an end portion of the first electrode, and in the organic electroluminescence device, an upper face of the first electrode at a position of the recessed portion is positioned below a plane including

Abstract: An organic EL element (10) includes a first light-emitting layer (33a) having the shortest emission peak wavelength of a light-emitting layer (33) and containing a host material and a TTF material or at least the TTF material, a second light-emitting layer (33b) containing at least a TADF material, a third light-emitting layer (33c) having the longest emission peak wavelength of the light-emitting layer (33) and containing at least fluorescent material. The excited triplet level of the TTF material is lower than the excited triplet level of the TADF material.

Abstract: A restriction unit includes at least one restriction opening configured to allow vapor deposition particles to pass through and a plurality of restriction sections prepared at both sides of the restriction opening. The restriction section has a cross-sectional shape of an inverse concave formed of a top wall and opening walls.

Abstract: In an organic EL element including a positive electrode, a negative electrode, and a light emitting layer (recombination layer) provided between the positive electrode and the negative electrode, an electron transport layer and an electron injection layer are provided between the light emitting layer and the negative electrode, and are sequentially arranged in the direction from the light emitting layer to the negative electrode. A hole injection layer and a hole transport layer are provided between the light emitting layer and the positive electrode, and are sequentially arranged in the direction from the positive electrode to the light emitting layer. A buffer layer for suppressing the electron trapping properties is provided between the light emitting layer and the hole transport layer.

Abstract: A vapor deposition unit (1) includes: a vapor deposition mask (10); a limiting plate unit (20) having limiting plates (22); and a vapor deposition source (30). The vapor deposition source (30) includes: a plurality of first openings (31) for injection of vapor deposition particles; and at least one second opening (32) for pressure release, wherein each of the first openings (31) is provided in a corresponding one of limiting plate openings (23) between the limiting plates (22) in a plan view, and the at least one second opening (32) is provided in such a position as not to face the limiting plate openings (23) in a plan view.

Abstract: A magnetic material section is provided on a mask substrate so as to be interposed between Y aperture lines of the mask substrate and between X aperture line of the mask substrate. A portion of the magnetic material section which portion is interposed between the X aperture lines has a first thickness and a second thickness which is less than the first thickness, the first thickness being that of each sub-portion thereof which is positioned between mutually adjacent ones of the Y aperture lines, the second thickness being that of each sub-portion thereof which is positioned between apertures which are mutually adjacent in a Y direction.

Abstract: An evaporation apparatus includes: a substrate holding section configured to hold a substrate; an evaporation mask having an opening part at a position which is opposite to one surface of the substrate; an evaporation source configured to supply the one surface with evaporated particles via the opening part and to form a film of the evaporated particles on the one surface exposed from the opening part; and a film thickness correction means configured to block a portion of an ejection path of the evaporated particles from the evaporation source toward the opening part and configured to correct a thickness of the film by changing a position at which the ejection path is blocked over time.

Abstract: To provide a vapor deposition source of which material usage efficiency is higher as compared with the related art. A vapor deposition source (10) includes a vapor deposition particles ejecting unit (30) configured to include multistage of nozzle units layered apart from each other in a vertical direction, each of the nozzle units including at least one vapor deposition nozzle (32, 52), and at least one space part (43) provided between the multistage of vapor deposition nozzles, and a vacuum exhaust unit (14) connected with the at least one space part (43).

Abstract: A vapor deposition particles ejecting unit (30) in a vapor deposition source (10) includes: a plurality of stages of nozzle units each including at least one vapor deposition nozzle (32, 52) and stacked while separated from each other in a vertical direction; and at least one hollow portion (43) formed between the at least one vapor deposition nozzle and the at least one vapor deposition nozzle of respective stages. The at least one hollow portion is surrounded on four sides by a side wall (44) including at least one opening (45) formed in the side wall and connecting the at least one hollow portion and a vacuum chamber space (2a).

Abstract: Limit nozzles configured to restrict directivity of first, second and third vapor deposition particles discharged from first, second and third vapor deposition source openings toward a substrate in an in-plane direction are installed in the first, second and third vapor deposition source openings.

Abstract: Provided is a line source that can achieve uniform film thickness distribution and also achieve high use efficiency of vapor deposition materials. A line source (10) has slit nozzles (1) having a slit nozzle's length-to-width ratio of 4 to 50, a width of 1 mm to 5 mm, and a depth of 5 mm to 20 mm.