Patents by Inventor Shinichi Koseki

Shinichi Koseki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230268235
    Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (<1%) on a substrate in a processing chamber. The method begins by obtaining a reference emission curve. An etch operation is performed on a patterned substrate. A plasma optical emission intensity is measured for each of the etch cycles. A differential curve between the reference emission and the plasma optical emissions is calculated. And endpoint is determined for the etch operation on the first substrate based on an inflection point detection or other unique features through pattern recognition in the differential curve for stopping the etch of the first substrate.
    Type: Application
    Filed: February 18, 2022
    Publication date: August 24, 2023
    Inventors: Lei LIAN, Quentin WALKER, Zefang WANG, Shinichi KOSEKI
  • Patent number: 11373877
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: June 28, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Daisuke Shimizu, Taiki Hatakeyama, Shinichi Koseki, Sean S. Kang, Jairaj Joseph Payyapilly, Hikaru Watanabe
  • Publication number: 20210320012
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Application
    Filed: April 13, 2020
    Publication date: October 14, 2021
    Inventors: Daisuke SHIMIZU, Taiki HATAKEYAMA, Shinichi KOSEKI, Sean S. KANG, Jairaj Joseph PAYYAPILLY, Hikaru WATANABE
  • Patent number: 9425058
    Abstract: Methods of patterning a blanket layer (a target etch layer) on a substrate are described. The methods involve multiple patterning steps of a mask layer several layers above the target etch layer. The compound pattern, made from multiple patterning steps, is later transferred in one set of operations through the stack to save process steps.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: August 23, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Hun Sang Kim, Jinhan Choi, Shinichi Koseki
  • Publication number: 20160027654
    Abstract: Methods of patterning a blanket layer (a target etch layer) on a substrate are described. The methods involve multiple patterning steps of a mask layer several layers above the target etch layer. The compound pattern, made from multiple patterning steps, is later transferred in one set of operations through the stack to save process steps.
    Type: Application
    Filed: July 24, 2014
    Publication date: January 28, 2016
    Inventors: Hun Sang Kim, Jinhan Choi, Shinichi Koseki
  • Publication number: 20150371889
    Abstract: Methods for processing a substrate include (a) providing a substrate comprising a silicon germanium layer and a patterned mask layer atop the silicon germanium layer to define a feature in the silicon germanium layer; (b) exposing the substrate to a first plasma formed from a first process gas to etch a feature into the silicon germanium layer; (c) subsequently exposing the substrate to a second plasma formed from a second process gas to form an oxide layer on a sidewall and a bottom of the feature; (d) exposing the substrate to a third plasma formed from a third process gas to etch the oxide layer from the bottom of the feature; and (e) repeating (b)-(d) to form the feature in the first layer to a desired depth, wherein the first process gas, the second process gas and the third process gas are not the same.
    Type: Application
    Filed: June 20, 2014
    Publication date: December 24, 2015
    Inventors: HUN SANG KIM, WONMO AHN, SHINICHI KOSEKI, JINHAN CHOI, SEAN KANG
  • Patent number: 8293656
    Abstract: A selective self-aligned dual patterning method. The method includes performing a single lithography operation to form a patterned mask having a narrow feature in a region of a substrate that is to a have pitch-reduced feature and a wide feature in a region of the substrate that is to have a non-pitch-reduced feature. Using the patterned mask, a template mask is formed with a first etch and the patterned mask is then removed from the narrow feature while being retained over the wide feature. The template mask is then thinned with a second etch to introduce a thickness delta in the template mask between the narrow and wide features. A spacer mask is then formed and the thinned narrow template mask is removed to leave a pitch double spacer mask while the thick wide template mask feature is retained to leave a non-pitch reduced mask.
    Type: Grant
    Filed: July 17, 2009
    Date of Patent: October 23, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Hun Sang Kim, Hyungje Woo, Shinichi Koseki, Eda Tuncel, Chung Liu
  • Publication number: 20100297850
    Abstract: A selective self-aligned dual patterning method. The method includes performing a single lithography operation to form a patterned mask having a narrow feature in a region of a substrate that is to a have pitch-reduced feature and a wide feature in a region of the substrate that is to have a non-pitch-reduced feature. Using the patterned mask, a template mask is formed with a first etch and the patterned mask is then removed from the narrow feature while being retained over the wide feature. The template mask is then thinned with a second etch to introduce a thickness delta in the template mask between the narrow and wide features. A spacer mask is then formed and the thinned narrow template mask is removed to leave a pitch double spacer mask while the thick wide template mask feature is retained to leave a non-pitch reduced mask.
    Type: Application
    Filed: July 17, 2009
    Publication date: November 25, 2010
    Inventors: Hun Sang Kim, Hyungje Woo, Shinichi Koseki, Eda Tuncel, Chung Liu