Abstract: The present invention provides a transfer device of a multistage forging press machine, capable of making a power transmission mechanism compact with a reduced number of components, and capable of easily adjusting a conveyance position. Additionally, the present invention provides a transfer device of a multistage forging press machine, capable of moving a plurality of chuck units in a lump to a place where replacement work can be performed easily, and capable of replacing chuck claws easily.

Abstract: The present invention provides a transfer device of a multistage forging press machine, capable of making a power transmission mechanism compact with a reduced number of components, and capable of easily adjusting a conveyance position. Additionally, the present invention provides a transfer device of a multistage forging press machine, capable of moving a plurality of chuck units in a lump to a place where replacement work can be performed easily, and capable of replacing chuck claws easily.

Abstract: An aspiration chamber is provided with an aspiration aperture, having a shape in which a width becomes larger from one edge toward another edge, and aspirates soft tissue through the aspiration aperture. A deformation amount measurement portion measures aspiration deformation amounts of the soft tissue within the aspiration aperture along a virtual line from the one edge to another edge. Based on the aspiration deformation amounts that have been measured by the deformation amount measurement portion, a computer uses a finite element model of the soft tissue to derive an approximation equation according to a numerical function for the aspiration deformation amounts and positions on the virtual line and determines a distribution of elasticity from the surface of the soft tissue into its interior by substituting parameters of the approximation equation into estimation equations that are derived by assuming that the deformation along the virtual line reflects elasticity distribution parameters.

Abstract: A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and supported by a crane unit 500. The crane unit 500 comprises an air cylinder 510 and a linear guide 520. The air cylinder 510 holds the chamber lid 200 movably in a vertical direction thereabove. The linear guide 520 holds the chamber lid 200 movably in a horizontal direction.

Abstract: A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.

Abstract: There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 ?·cm or more and 100 ?·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 ?·cm or more and 100 ?·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.

Abstract: The present invention is an electrode plate for use in plasma processing, to be placed in a plasma processing system so that it faces to a substrate to be subjected to plasma processing, characterized in that its resistivity is in the range of 0.01 m?cm to 2 ?cm.

Abstract: A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and supported by a crane unit 500. The crane unit 500 comprises an air cylinder 510 and a linear guide 520. The air cylinder 510 holds the chamber lid 200 movably in a vertical direction thereabove. The linear guide 520 holds the chamber lid 200 movably in a horizontal direction.

Abstract: A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.

Abstract: There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 ?·cm or more and 100 ?·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 ?·cm or more and 100 ?·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.