Patents by Inventor Shin-ichi Sakurada

Shin-ichi Sakurada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for growing silicon single crystal
    Patent number: 5037503
    Abstract: A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.
    Type: Grant
    Filed: May 26, 1989
    Date of Patent: August 6, 1991
    Assignees: Osaka Titanium Co., Ltd., Kyushu Electronic Metal
    Inventors: Tsutomu Kajimoto, Daizou Horie, Shin-ichi Sakurada
  • Method for growing silicon single crystal
    Patent number: RE35242
    Abstract: A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.
    Type: Grant
    Filed: September 30, 1992
    Date of Patent: May 21, 1996
    Assignee: Sumitomo Sitix Corporation
    Inventors: Tsutomu Kajimoto, Daizou Horie, Shin-ichi Sakurada