Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

Abstract: An optical apparatus including an optical element includes a holder configured to hold the optical element, and a rectifier configured to rectify a flow of gas in a space adjacent to a surface of the optical element, and to decrease the flow rate of the gas adjacent to the surface of the optical element.

Abstract: An exposure apparatus which exposes a substrate via a liquid, comprises: a projection optical system configured to project a pattern of a reticle onto the substrate; a substrate stage configured to hold the substrate and move; a top plate which is arranged on the substrate stage and in which an opening is formed; and a measurement member which is arranged in the opening formed in the top plate arranged on the substrate stage, wherein a gap is formed between the top plate and the measurement member in a plane perpendicular to an optical axis of the projection optical system, and wherein the measurement member is formed of one of a regular N-sided polygon (N>4) and a circle in the plane.

Abstract: The present invention provides an exposure apparatus which exposes a substrate via a liquid, the apparatus including a projection optical system configured to project a pattern of a reticle onto the substrate, a liquid supply unit configured to supply the liquid between the projection optical system and the substrate, a blowing nozzle which is arranged around the projection optical system on a side of the substrate and configured to blow a gas around the liquid supplied between the projection optical system and the substrate, and an exhaust unit configured to exhaust the gas in a space between the blowing nozzle and the liquid supplied between the projection optical system and the substrate, the exhaust unit including a removal member configured to remove a volatile component which volatilizes from the liquid and is contained in the gas in the space.

Abstract: An exposure apparatus which exposes a substrate via a liquid, comprises: a projection optical system configured to project a pattern of a reticle onto the substrate; a substrate stage configured to hold the substrate and move; a top plate which is arranged on the substrate stage and in which an opening is formed; and a measurement member which is arranged in the opening formed in the top plate arranged on the substrate stage, wherein a gap is formed between the top plate and the measurement member in a plane perpendicular to an optical axis of the projection optical system, and wherein the exposure apparatus satisfies the following formula: ?·cos ?1·L1+?·cos ?2·L2+Pf·S<0.

Abstract: An exposure apparatus which exposes a substrate via a liquid, comprises: a projection optical system configured to project a pattern of a reticle onto the substrate; a substrate stage configured to hold the substrate and move; a top plate which is arranged on the substrate stage and in which an opening is formed; and a measurement member which is arranged in the opening formed in the top plate arranged on the substrate stage, wherein a gap is formed between the top plate and the measurement member in a plane perpendicular to an optical axis of the projection optical system, and wherein the measurement member is formed of one of a regular N-sided polygon (N>4) and a circle in the plane.

Abstract: An immersion exposure apparatus has a projection optical system and a substrate stage. The substrate stage includes a chuck and a top plate located around the substrate held by the chuck. The top plate includes a measurement reference member. A liquid contacting area, on the surface of the top plate, which comes into contact with the liquid in exposing the substrate is coated with a coating film exhibiting liquid repellency against the liquid, and the area other than the liquid contacting area on the surface of the measurement reference member is not coated with the coating film.

Abstract: A scanning exposure apparatus includes a master stage which holds a master and moves in a predetermined scanning direction, a projection optical system which projects a pattern of the master onto a substrate, and an optical element which is held by the master stage and moved together with the master. The optical element is so constituted as to optically correct a shift of the master held by the master stage from an ideal state.

Abstract: An optical apparatus including an optical element includes a holder configured to hold the optical element, and a rectifier configured to rectify a flow of gas in a space adjacent to a surface of the optical element, and to decrease the flow rate of the gas adjacent to the surface of the optical element.

Abstract: An exposure apparatus according to this invention includes a projection optical system having a predetermined image forming characteristic; a reticle stage, arranged on one side of the projection optical system, and which holds a reticle having a transfer pattern and has a reference plate for positioning; and a wafer stage, arranged on the other side of the projection optical system, and which holds a wafer where the transfer pattern is transferred and has a reference mark. For transferring the transfer pattern to the wafer, a reticle protection pellicle and an optical device are arranged between the reticle and the projection optical system. For performing positioning using the reference plate and the reference mark, a correction optical device is arranged between the reference plate and the projection optical system. The correction optical device has a thickness equal to the total thickness of the optical device and pellicle.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern, which has been formed on a reticle, onto a photosensitive substrate, wherein a projection region of the pattern, which region is formed on the substrate via the projection optical system, is formed at a position that is off-centered with respect to an optical axis of the projection optical system, a substrate stage capable of holding and moving the substrate, a substrate transport system for transporting the substrate to the substrate stage, wherein the substrate transport system is disposed on the side of the projection region with respect to the optical axis, and the substrate transport system and the substrate stage are arranged in a divided space which is purged with inert gas, and a position detection system for detecting an alignment mark on the substrate.

Abstract: An exposure apparatus according to this invention comprises: a projection optical system having a predetermined image forming characteristic; a reticle stage, arranged on one side of the projection optical system, which holds a reticle having a transfer pattern and has a reference plate for positioning; and a wafer stage, arranged on the other side of the projection optical system, which holds a wafer where the transfer pattern is transferred and has a reference mark. For transferring the transfer pattern to the wafer, a reticle protection pellicle and an optical device are arranged between the reticle and the projection optical system. For performing positioning using the reference plate and the reference mark, a correction optical device is arranged between the reference plate and the projection optical system. The correction optical device has an equal thickness to the total thickness of the optical device and pellicle.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern formed a mask onto an object to be exposed, a correction optical element, provided between the mask and the projection optical system, for reducing a deformation of the pattern, and a detector of an oblique light projection system, provided at a side of a pattern surface of the mask, for detecting a surface shape of the mask through the correction optical element.

Abstract: An aligning method for a scanning projection exposure apparatus, which scans a first movable stage which moves with a first object being placed thereon, and a second movable stage which moves with a second object being placed thereon, in synchronism with each other with respect to a projection optical system, and projects a pattern formed on the first object onto the second object through the projection optical system. The aligning method includes the steps of (i) positioning the first object with respect to the first movable stage, (ii) detecting a position of a mark formed on a reference plate fixed to the first movable stage by a detection system, and (iii) obtaining a detection reference position of the detection system from a position detection result. The method also includes detecting a position of a mark formed on the first object with the detection system, thereby obtaining a deformation amount of the first object.

Abstract: A scanning projection exposure apparatus which has a first movable stage which moves with a first object being placed thereon, and a second movable stage which moves with a second object being placed thereof. The projection exposure apparatus scans the first and second movable stages in synchronism with each other with respect to a projection optical system, and projects a pattern formed on the first object onto the second object through the projection optical system. The apparatus includes a reference plate fixed to the first movable stage and having a mark, which is a reference for measuring deformation of the first object occurring due to exposure of the first object to exposure light, a mark, which is formed on the first object, for measuring deformation, and a detection system for detecting a position of the mark formed on the reference plate and a position of the mark formed on the first object.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern formed a mask onto an object to be exposed, a correction optical element, provided between the mask and the projection optical system, for reducing a deformation of the pattern, and a detector of an oblique light projection system, provided at a side of a pattern surface of the mask, for detecting a surface shape of the mask through the correction optical element.

Abstract: Distortion of a pattern projected onto a wafer that is caused by, e.g., the surface shape of a reticle held by a reticle stage is corrected at a high precision. In a scanning exposure apparatus, an optical element (G1) is held by a reticle stage (RST) and moved together with a reticle (R). The optical element (G1) is so processed as to correct distortion caused by the surface shape of the reticle (R) held by the reticle stage (RST).

Abstract: A scanning projection exposure apparatus includes a mask stage (RST) which moves with a mask (R) being placed thereon, a wafer stage (WST) which moves with a wafer (W) being placed thereon, a reference plate (22) fixed to the mask stage (RST) and having a mark, and a detection system (23) capable of optically detecting the mark. The position of the mark on the reference plate (22) is detected by the detection system (23). The mask stage (RST) is further moved in the scanning exposure direction. A mark on the mask (R) is detected by the detection system (23) with reference to the position of the mark on the reference plate (22). A deformation amount of the mask (R) is obtained. The mask stage (RST) and wafer stage (WST) are scanned in synchronism with each other with respect to a projection optical system (8). A pattern on the mask (R) is projected onto the wafer (W) through the projection optical system (8).

Abstract: An exposure apparatus has an illuminating optical system for illuminating a mask with illuminating light from a light source, a projection optical system for projecting a pattern image, which has been formed on the mask, onto a wafer constituting a photosensitive substrate, and an alignment sensor constructing a position detection system for detecting an alignment mark on the wafer. The pattern region on the wafer is formed at a position offset toward the side of the alignment sensor from the projection center of the projection optical system, and the alignment sensor is disposed on the side near the pattern region formed on the wafer off-centered from the optic axis. By thus shortening baseline distance, the effects of measurement error due to baseline fluctuation can be reduced and it is possible to achieve highly precise detection of the position of an object to be detected (a position detection mark) and highly precise alignment.

Abstract: A scanning projection exposure apparatus includes a mask stage (RST) which moves with a mask (R) being placed thereon, a wafer stage (WST) which moves with a wafer (W) being placed thereon, a reference plate (22) fixed to the mask stage (RST) and having a mark, and a detection system (23) capable of optically detecting the mark. The position of the mark on the reference plate (22) is detected by the detection system (23). The mask stage (RST) is further moved in the scanning exposure direction. A mark on the mask (R) is detected by the detection system (23) with reference to the position of the mark on the reference plate (22). A deformation amount of the mask (R) is obtained. The mask stage (RST) and wafer stage (WST) are scanned in synchronism with each other with respect to a projection optical system (8). A pattern on the mask (R) is projected onto the wafer (W) through the projection optical system (8).