Patents by Inventor Shinichi Takeshiro

Shinichi Takeshiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of etching silicon nitride layer by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen
    Patent number: 5695602
    Abstract: A silicon nitride layer on a silicon oxide layer is selectively etched by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen, and the hydrogen bromide is large enough in vapor pressure to maintain the composition of the etching gas without a heater.
    Type: Grant
    Filed: May 21, 1996
    Date of Patent: December 9, 1997
    Assignee: NEC Corporation
    Inventor: Shinichi Takeshiro
  • Method of making a semiconductor device by dry etching process
    Patent number: 5316980
    Abstract: In a method for making a semiconductor device, an insulating film, which is composed of a silicon oxide film and an organic spin-on glass film, is formed on a semiconductor substrate having a step-like part. The insulating film is thereafter etched back with a dry etching process and is thereby planarized. As an etching gas, a mixture of at least one of fluorocarbon types of gases and at least one of hydrofluorocarbon types of gases is used. An insulating film having a high planarity is thereby obtained.
    Type: Grant
    Filed: August 11, 1992
    Date of Patent: May 31, 1994
    Assignee: NEC Corporation
    Inventor: Shinichi Takeshiro