Abstract: An optical film that, when being used in an image display device, it is possible to suppress a change in redness with respect to an original image in images reflected in surroundings, a manufacturing method of a light absorption anisotropic layer, and an image display device. The optical film includes a light absorption anisotropic layer which contains a liquid crystalline compound and a dichroic substance, in which an angle ? between a transmittance central axis of the light absorption anisotropic layer and a normal direction of a surface of the light absorption anisotropic layer is 0° or more and 45° or less, and a haze value of the optical film is more than 1% and 20% or less.

Abstract: An electrostatic input apparatus is provided. A measuring unit measures capacitance at a plurality of coordinates of an electrostatic coordinate input unit. A converting unit obtains a reference value of the capacitance and converts the capacitance to difference values according to a distance between the electrostatic coordinate input unit at the coordinates and a finger. A first coordinate calculating unit calculates barycentric coordinates of a contact portion from the difference values for the plurality of coordinates. A cycle determining unit determines whether the difference values at coordinates on a circumference of a circle with a predetermined radius centered on the barycentric coordinates exhibit periodicity of two cycles in one round along the circle. An operation determining unit performs, when the cycle determining unit determines that the difference values exhibit periodicity of two cycles, a determination that an input operation using two or more fingers has been performed.

Abstract: An image projection system in which a projection image is easier to see. An image projection system includes an image projection device which emits projection light that is linearly polarized light; a screen which is irradiated with the projection light emitted from the image projection device; and a light absorption anisotropic layer which is disposed between the image projection device and the screen and through which the projection light passes, the light absorption anisotropic layer contains a dichroic substance, and a transmittance central axis of the light absorption anisotropic layer is in a direction toward the screen.

Abstract: A light absorption anisotropic film that, when being applied to an image display device, it is easy to control a region where visibility is high and a region where visibility is low and viewing angle controllability is more excellent, an optical film, and an image display device. The light absorption anisotropic film contains a dichroic substance and a liquid crystal compound, in which the light absorption anisotropic film has a plurality of regions having different directions of transmittance central axes in an in-plane direction of the light absorption anisotropic film, in the plurality of regions, all angles ? between the transmittance central axes and a normal direction of a surface of the light absorption anisotropic film are in a range of 0° to 70°, and any of a specific requirement 1, a specific requirement 2, or a specific requirement 3 is satisfied.

Abstract: A material decomposition apparatus for performing decomposition of a material in an object. The apparatus includes a data storage section for storing correction data preliminarily generated by decomposing one of three or more materials into the other two materials, a data input section to which radiation data of the object is inputted, the radiation data being divided into a plurality of energy levels, and a decomposition processing section for repeatedly performing two-material decomposition for decomposition of the other two materials of the three or more materials using the radiation data at different energy levels and the correction data to perform decomposition of the inside of the object into the three or more materials.

Abstract: According to one embodiment, a disk device includes a rotatable magnetic disk, an actuator which supports and moves a head, a ramp which holds the head at an unloaded position, a motor which rotates the magnetic disk, and a controller which performs a load operation and a seek operation. When a radial travel speed of the head during the load operation is referred to as Vr1, a circumferential travel speed of the head is referred to as Vt1, a radial travel speed of the head during the seek operation is referred to as Vrs, and a circumferential travel speed is referred to as Vts, the controller controls at least one of the radial travel speed of the head and number of revolutions of the magnetic disk to satisfy a relationship (Vr1/Vt1)<(Vrs/Vts).

Abstract: In one embodiment, the present disclosure provides pharmaceutical compositions for suppressing the progression of fibrosis in systemic sclerosis, which contain an antibody against IL-31 receptor A as an active ingredient. In another embodiment, the present disclosure provides pharmaceutical compositions for suppressing Th2 polarization to suppress the progression of fibrosis in systemic sclerosis, which comprise an antibody against IL-31 receptor A as an active ingredient. In a certain embodiment, the above-mentioned antibody is an antibody having a neutralizing activity against IL-31 receptor A.

Abstract: Provided is a laminate capable of reducing a change in hue of a reflected image in the surroundings (for example, window glass) from an original image, suppressing a hue shift of particularly the reflected image to redness, and suppressing the reflected image from being conspicuous, a reflection prevention system including this laminate, and an image display device including this laminate. The laminate includes a polarizer having an absorption axis in an in-plane direction, a light absorption anisotropic layer containing a liquid crystal compound and a dichroic substance, and a linear polarization conversion layer, in which an angle between a transmittance central axis of the light absorption anisotropic layer and a normal line of a layer plane of the light absorption anisotropic layer is 0° or greater and 45° or less.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: A decline in image quality that is caused by a variation of a gain in an amplification circuit is suppressed. The amplification circuit includes an amplification transistor, a cascode transistor, and a control circuit. The amplification transistor amplifies an input signal. The cascode transistor is configured to, in a case where a drain-source voltage between a drain and a source is higher than a predetermined voltage, supply a substantially-constant drain current to a reference potential line with a predetermined reference potential via the amplification transistor. Further, the control circuit is configured to, in a case where an initialization instruction is issued, control the drain-source voltage to be a value higher than the predetermined voltage.

Abstract: The present technology relates to a comparator that can easily modify operating point potential of the comparator, and an imaging device. A pixel signal output from a pixel, and, a reference signal with changeable voltage are input to a differential pair. A current mirror connected to the differential pair, and a voltage drop mechanism allowed to cause a predetermined voltage drop is connected between a transistor that configures the differential pair, and a transistor that configures the current mirror. A switch is connected in parallel to the voltage drop mechanism. The present technology can be applied, for example, to an image sensor that captures an image.

Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.

Abstract: A decline in image quality that is caused by a variation of a gain in an amplification circuit is suppressed. The amplification circuit includes an amplification transistor, a cascode transistor, and a control circuit. The amplification transistor amplifies an input signal. The cascode transistor is configured to, in a case where a drain-source voltage between a drain and a source is higher than a predetermined voltage, supply a substantially-constant drain current to a reference potential line with a predetermined reference potential via the amplification transistor. Further, the control circuit is configured to, in a case where an initialization instruction is issued, control the drain-source voltage to be a value higher than the predetermined voltage.

Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.