Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.

Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.

Abstract: A member which contacts liquid, gas, or powder insulating material when the insulating material is caused to flow and which is less susceptible to dielectric breakdown; a distribution mechanism, tank, and device using a sheet for lining the member or the inside of a pipe or a tank containing the member; a storage tank in which a portion of the surface of a liquid-contact portion thereof includes the member a storage method for storing organic solvent, ultrapure water, and hydrogen peroxide water, using the storage tanks; and a method for manufacturing a semiconductor product using the organic solvent stored in the storage tank. A resin composition containing a matrix resin and an electro-conductive material dispersed in the matrix resin is used for the member which contacts liquid, gas, or powder insulating material when the insulating material is caused to flow.

Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.

Abstract: The problem that a metal wire joined integrally to a hole formed in a proximal end face of a medical suture needle is susceptible to bending damage is reduced. A suture needle A has a blind hole 5 which is formed in a proximal end face 3, inserts the end of a wire 10 thereinto, and joins the wire 10 thereto by caulking, and a counterbore 6 which is formed on the proximal end face 3 side of the blind hole 5 and has a dimension D at least in the proximal end face 3 larger than a dimension d of the blind hole 5 and a depth L smaller than a depth of a caulked portion with respect to the blind hole 5. A suture needle with wire inserts the end of the wire 10 into the blind hole 5 to caulk the outer circumference of the suture needle corresponding to the blind hole 5, thereby integrally joins the wire 10 thereto.

Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.

Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.

Abstract: A thin film transistor array substrate of the present invention having an array area, and a frame area, the thin film transistor array substrate includes: a thin film transistor; an upper metal pattern formed by the same material as source and drain electrodes at the same layer; a transparent conductive film pattern; and an upper layer insulation film, wherein the transparent conductive film pattern has: a first-type transparent conductive film pattern provided to located within one of a pattern of the electrode pattern and a pattern of the metal pattern, as viewed from the top side, and to not cover pattern end faces of the electrode pattern or the metal pattern; and a second-type transparent conductive film pattern provided to stick out from an inside of at least a portion of one of the patterns, as viewed from the top side and to cover the pattern end faces.

Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.

Abstract: Provided is an innovative belt-shaped lubricating material for dry wiredrawing which not only can be used under severe wiredrawing processing conditions such as those of high temperature/high pressure/high speed as well as conventional powdered or granular lubricants for dry wiredrawing but also can cope with diameter reduction to a wide range of wire diameters ranging from a small diameter to a large diameter and a wide range of linear speeds ranging from a low speed to a high speed, has excellent functionalities such as lubricity, followability, spreadability, adhesiveness, heat resistance, processability, workability, safety, durability and productivity irrespective of a processed shape, is effective in improving work environments and is friendly to the global environment. The belt-shaped lubricating material for dry wiredrawing includes a film containing 10 to 90% by weight of a metal salt of a saturated fatty acid and 10 to 90% by weight of a thermoplastic resin.

Abstract: A thin film transistor array substrate of the present invention having an array area, and a frame area, the thin film transistor array substrate includes: a thin film transistor; an upper metal pattern formed by the same material as source and drain electrodes at the same layer; a transparent conductive film pattern; and an upper layer insulation film, wherein the transparent conductive film pattern has: a first-type transparent conductive film pattern provided to located within one of a pattern of the electrode pattern and a pattern of the metal pattern, as viewed from the top side, and to not cover pattern end faces of the electrode pattern or the metal pattern; and a second-type transparent conductive film pattern provided to stick out from an inside of at least a portion of one of the patterns, as viewed from the top side and to cover the pattern end faces.

Abstract: The present invention provides a novel cellulase-producing fungus, i.e. Acremonium cellulolyticus CF-2612 strain or a mutant thereof, which has an ability to produce cellulase so highly, a method for producing cellulase and/or hemicellulase by culturing said fungus, and a method for degrading or saccharifying biomass using the cellulase and/or hemicellulase.

Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.

Abstract: The present invention relates to a process for producing ethanol by carrying out the following steps: performing enzymatic saccharification of pre-treated lignocellulosic biomass in a reaction system; performing ethanol fermentation of fermentable sugars obtained from the saccharified pre-treated lignocellulosic biomass in the same reaction zone as the enzymatic saccharification; distilling ethanol directly off from a reaction treatment liquid in the reaction zone, so as to recover the ethanol.

Abstract: The present invention provides a novel cellulase-producing fungus, i.e. Acremonium cellulolyticus CF-2612 strain or a mutant thereof, which has an ability to produce cellulase so highly, a method for producing cellulase and/or hemicellulase by culturing said fungus, and a method for degrading or saccharifying biomass using the cellulase and/or hemicellulase.

Abstract: It is an object of the present invention to obtain a PTFE molding excellent in flexing resistance without decreasing the tensile strength and tensile elongation. The present invention is a modified polytetrafluoroethylene molded article obtained by molding a modified polytetrafluoroethylene molding powder, wherein the modified polytetrafluoroethylene molding powder is not melt-moldable, the modified polytetrafluoroethylene constituting the modified polytetrafluoroethylene molding powder contains 0.01 to 1% by mass of a perfluorovinyl ether unit represented by the formula (I): (wherein X is a perfluoroalkyl group containing 1 to 6 carbon atoms or a perfluoroalkoxyalkyl group containing 4 to 9 carbon atoms) and the heat of crystallization thereof is 18.0 to 25.0 J/g as measured using a differential scanning calorimeter, and the modified polytetrafluoroethylene molded article has a heat of fusion of not more than 28 J/g and a flex life of at least 200×104 cycles.

Abstract: A thin film transistor array substrate includes a gate electrode formed on a substrate, a gate insulating film formed over the gate electrode, a source electrode and a drain electrode that are formed on the gate insulating film and include a transparent conductive film and a metal film formed on the transparent conductive film, a semiconductor film formed over the source electrode and the drain electrode to be electrically connected to the source electrode and the drain electrode, and a pixel electrode formed extending from the drain electrode.

Abstract: The present invention provides a polytetrafluoroethylene molded article, particularly a PTFE molded article for high-frequency insulation, which is excellent in various electric properties and mechanical properties in a high frequency range of 3 to 30 GHz. The present invention also provides PTFE fine powder, which is excellent in extrusion moldability and capable of providing the molded article, and a process for preparing the same. More specifically, the present invention relates to a polytetrafluoroethylene fine powder having a standard specific gravity of 2.180 to 2.225, which is obtained by contacting polytetrafluoroethylene fine powder having a standard specific gravity of 2.180 to 2.225 with a fluorine radical source, wherein tan? at 12 GHz of a film comprising the powder, which is obtained by cooling at 5 to 50° C./second after baking, is at most 2.0×10?4.

Abstract: It is an object of the present invention to obtain a PTFE molding excellent in flexing resistance without decreasing the tensile strength and tensile elongation. The present invention is a modified polytetrafluoroethylene molded article obtained by molding a modified polytetrafluoroethylene molding powder, wherein the modified polytetrafluoroethylene molding powder is not melt-moldable, the modified polytetrafluoroethylene constituting the modified polytetrafluoroethylene molding powder contains 0.01 to 1% by mass of a perfluorovinyl ether unit represented by the formula (I): (wherein X is a perfluoroalkyl group containing 1 to 6 carbon atoms or a perfluoroalkoxyalkyl group containing 4 to 9 carbon atoms) and the heat of crystallization thereof is 18.0 to 25.0 J/g as measured using a differential scanning calorimeter, and the modified polytetrafluoroethylene molded article has a heat of fusion of not more than 28 J/g and a flex life of at least 200×104 cycles.

Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.