Abstract: A semiconductor device includes an insulated circuit board having a semiconductor chip thereon, a W-phase output terminal electrically connected to the chip, a cooling device including a cooling top plate having a top surface on which the insulated circuit board is disposed, and a case including a frame portion on the cooling top plate and having an open storage area in which the insulated circuit board is stored, and a current detection unit for detecting an output current flowing through the output terminal. The output terminal extends from the unit storage portion to an outside the case and passes through the current detection unit. The current detection unit is embedded within the frame portion such that a shortest external dimension thereof is parallel to a first direction that is perpendicular to the top surface in the cooling area of the cooling top plate.

Abstract: A driver circuit for driving a switching device having a control electrode. The driver circuit includes an ON circuit configured to turn on the switching device in response to a first drive signal, and an OFF circuit configured to discharge a parasitic capacitance of the control electrode of the switching device with a constant current, to turn off the switching device, in response to a second drive signal.

Abstract: A driver circuit for driving a switching device having a control electrode. The driver circuit includes an ON circuit configured to turn on the switching device in response to a first drive signal, and an OFF circuit configured to discharge a parasitic capacitance of the control electrode of the switching device with a constant current, to turn off the switching device, in response to a second drive signal.

Abstract: A semiconductor apparatus includes a cooler including a bottom plate, a plurality of fins disposed on the bottom plate, and a cover member including a fin cover member and a plate cover member. The fin cover member covers the plurality of fins and has a heat dissipation outer surface. The plate cover member surrounds an outer periphery of the fin cover member, is disposed on the bottom plate, and has a plate cover surface. The apparatus further includes an insulating substrate on the heat dissipation outer surface, a semiconductor element on the insulating substrate, and an insulating member on the plate cover surface, to seal the insulating substrate and the semiconductor element. The plate cover surface is position closer to the bottom plate than is the heat dissipation outer surface with respect to a height direction orthogonal to the bottom plate.

Abstract: A semiconductor apparatus includes a cooler including a top plate, a bottom plate having upper and lower surfaces opposite to each other, a plurality of fins, each of which is bonded between the top plate and the upper surface of the bottom plate, and a circumferential wall surrounding the plurality of fins and being bonded between the top plate and the upper surface of the bottom plate. A flow path for cooling water is formed by a space defined by the top plate, the plurality of fins, the circumferential wall and the bottom plate. The apparatus further includes a semiconductor element on the insulating substrate with an insulating substrate interposed therebetween. The lower surface of the bottom plate is a flat surface, and the upper surface of the bottom plate is warped so that a center thereof protrudes with respect to a periphery thereof toward the semiconductor element.

Abstract: A semiconductor module is provided to downsize the module, the semiconductor module including a terminal case made of a resin for housing a semiconductor chip; and a cooling portion including a refrigerant circulating portion through which a refrigerant flows and a joining portion surrounding the refrigerant circulating portion, the refrigerant circulating portion being arranged below the terminal case, and the cooling portion being arranged directly or indirectly in close contact with the terminal case at the joining portion, wherein the terminal case is provided above the joining portion, and has a side wall provided so as to surround the semiconductor chip when seen in a top view, and a temperature sensor for sensing a temperature of the refrigerant is provided on the side wall.

Abstract: Provided is a semiconductor module comprising: a semiconductor chip; a cooling portion having a refrigerant passing portion through which a refrigerant passes; and a laminated substrate having: a first metal interconnection layer; a second metal interconnection layer; and an insulation provided between the first metal interconnection layer and the second metal interconnection layer, wherein the cooling portion has: a top plate; a bottom plate; and a plurality of protruding parts which are provided on a surface of the bottom plate, and are separated from each other in a flow direction of the refrigerant, and are respectively provided continuously in a direction orthogonal to the flow direction, wherein the plurality of protruding parts are provided at a position overlapping with one end of the second metal interconnection layer and at a position overlapping with the semiconductor chip in the flow direction.

Abstract: A semiconductor module is provided to downsize the module, the semiconductor module including a terminal case made of a resin for housing a semiconductor chip; and a cooling portion including a refrigerant circulating portion through which a refrigerant flows and a joining portion surrounding the refrigerant circulating portion, the refrigerant circulating portion being arranged below the terminal case, and the cooling portion being arranged directly or indirectly in close contact with the terminal case at the joining portion, wherein the terminal case is provided above the joining portion, and has a side wall provided so as to surround the semiconductor chip when seen in a top view, and a temperature sensor for sensing a temperature of the refrigerant is provided on the side wall.

Abstract: Provided is a semiconductor module comprising: a semiconductor chip; a cooling portion having a refrigerant passing portion through which a refrigerant passes; and a laminated substrate having: a first metal interconnection layer; a second metal interconnection layer; and an insulation provided between the first metal interconnection layer and the second metal interconnection layer, wherein the cooling portion has: a top plate; a bottom plate; and a plurality of protruding parts which are provided on a surface of the bottom plate, and are separated from each other in a flow direction of the refrigerant, and are respectively provided continuously in a direction orthogonal to the flow direction, wherein the plurality of protruding parts are provided at a position overlapping with one end of the second metal interconnection layer and at a position overlapping with the semiconductor chip in the flow direction.

Abstract: A semiconductor chip temperature estimation device that estimates the temperature of a semiconductor chip incorporated together with a thermistor in a semiconductor module includes a first estimation unit which calculates a first estimation value of a chip loss of the chip, a memory which stores in advance a correlation between a temperature rise of the temperature sensor and the chip loss of the chip, a second estimation unit which calculates a second estimation value of the temperature rise of the temperature sensor, and a third estimation unit which calculates a third estimation value of the temperature of the cooling element. The temperature of the semiconductor chip is estimated by using the third estimation value as a base temperature.

Abstract: A semiconductor device includes an insulating substrate, semiconductor elements and a cooling device. The cooling device includes a heat radiation substrate, fins, and a cooling case of a box-like shape that accommodates the fins and has a bottom wall and side walls. An introducing port and a discharge port for a cooling liquid are provided diagonally in a pair of side walls provided along the longitudinal direction of the assembly of the fins, among the side walls of the cooling case. A diffusion wall facing the introducing port is provided inside the cooling case.

Abstract: An IGBT is disposed in an IGBT portion, and an FWD is disposed in an FWD portion. A p-type base region and an n?-type drift region are alternately exposed in a trench longitudinal direction in a substrate front surface in a mesa portion between neighboring trenches in the IGBT portion. A p-type anode region and the n?-type drift region are alternately exposed in the trench longitudinal direction in the substrate front surface in a mesa portion in the FWD portion, and a repetitive structure is formed with a portion of the n?-type drift region sandwiched between p-type anode regions and one p-type anode region in contact with the portion as one unit region. The proportion occupied by the p-type anode region in one unit region (an anode ratio) (?) is 50% to 100%.

Abstract: A semiconductor module includes a first semiconductor element, a second semiconductor element, a first heat spreader electrically and thermally connected to the first semiconductor element, a second heat spreader electrically and thermally connected to the second semiconductor element, a DCB substrate including a first metal foil on a top surface of a ceramic insulating substrate and including a second metal foil on a bottom surface, the first metal foil being electrically and thermally joined to the first heat spreader and the second heat spreader, and a cooler thermally connected to the second metal foil of the DCB substrate. The first semiconductor element is disposed on an upstream side, and the second semiconductor element is disposed on a downstream side with respect to a flowing direction of a refrigerant of the cooler. An area of the second heat spreader is greater than an area of the first heat spreader.

Abstract: A semiconductor module includes a first semiconductor element, a second semiconductor element, a first heat spreader electrically and thermally connected to the first semiconductor element, a second heat spreader electrically and thermally connected to the second semiconductor element, a DCB substrate including a first metal foil on a top surface of a ceramic insulating substrate and including a second metal foil on a bottom surface, the first metal foil being electrically and thermally joined to the first heat spreader and the second heat spreader, and a cooler thermally connected to the second metal foil of the DCB substrate. The first semiconductor element is disposed on an upstream side, and the second semiconductor element is disposed on a downstream side with respect to a flowing direction of a refrigerant of the cooler. An area of the second heat spreader is greater than an area of the first heat spreader.

Abstract: An IGBT is disposed in an IGBT portion, and an FWD is disposed in an FWD portion. A p-type base region and an n?-type drift region are alternately exposed in a trench longitudinal direction in a substrate front surface in a mesa portion between neighboring trenches in the IGBT portion. A p-type anode region and the n?-type drift region are alternately exposed in the trench longitudinal direction in the substrate front surface in a mesa portion in the FWD portion, and a repetitive structure is formed with a portion of the n?-type drift region sandwiched between p-type anode regions and one p-type anode region in contact with the portion as one unit region. The proportion occupied by the p-type anode region in one unit region (an anode ratio) (?) is 50% to 100%.

Abstract: A semiconductor chip temperature estimation device that estimates the temperature of a semiconductor chip incorporated together with a thermistor in a semiconductor module includes a first estimation unit which calculates a first estimation value of a chip loss of the chip, a memory which stores in advance a correlation between a temperature rise of the temperature sensor and the chip loss of the chip, a second estimation unit which calculates a second estimation value of the temperature rise of the temperature sensor, and a third estimation unit which calculates a third estimation value of the temperature of the cooling element. The temperature of the semiconductor chip is estimated by using the third estimation value as a base temperature.

Abstract: A semiconductor device is disclosed. The semiconductor device is a power semiconductor module of a liquid-cooled type, which substantially prevents a cooling liquid from leaking out without providing additional working on a casing and without a providing high precision in a process for forming a sealing member and a groove for fitting the sealing member. The semiconductor device has a groove for fitting a sealing member that is formed not at the casing but at the base plate. The sealing member and the groove have widths that bring the sealing member made of an elastic material into contact with side surfaces of the groove intermittently.

Abstract: A semiconductor device includes an insulating substrate, semiconductor elements and a cooling device. The cooling device includes a heat radiation substrate, fins, and a cooling case of a box-like shape that accommodates the fins and has a bottom wall and side walls. An introducing port and a discharge port for a cooling liquid are provided diagonally in a pair of side walls provided along the longitudinal direction of the assembly of the fins, among the side walls of the cooling case. A diffusion wall facing the introducing port is provided inside the cooling case.

Abstract: A method of producing layer-like clad metal materials is disclosed. The layer-like clad metal material is produced by applying an organic substance consisting mainly of carbon and hydrogen to the surface of a metallic core material having at its surface substantially no oxide film to form a coating film having a thickness of 50-3,000 .mu.m, placing said core material in a casting mold, pouring a molten metal having the same or different composition around said core material into said mold by a bottom pouring process to form a clad metal ingot, subjecting said ingot to slab rolling or forging to form an intermediate product, and then subjecting said intermediate product to a hot working and, if necessary, a cold working.