Abstract: A server device includes: an acquiring unit that acquires a first flow-velocity distribution and a second flow-velocity distribution, calculated by using different boundary conditions, of a fluid within a predetermined space; a comparing unit that compares a difference value between a first flow-velocity vector included in the first flow-velocity distribution and a second flow-velocity vector included in the second flow-velocity distribution with a predetermined threshold value with respect to each of regions within the predetermined space; and a generating unit that generates and outputs at least one of first flow information and second flow information based on the first flow-velocity distribution and the second flow-velocity distribution if the difference value is larger than or equal to the predetermined threshold value with respect to each of the regions within the predetermined space.

Abstract: A coating agent composition of the present invention contains photocatalyst particles composed of metal oxide in which an upper end potential of a valence band is 3 V (vs SHE) or more and a lower end potential of a conduction band is 0.16 V (vs SHE) or less. Moreover, the coating agent composition contains cuprous oxide particles, metal oxide particles without photocatalytic activity, a binder resin, and an organic solvent. Then, in 100 parts by mass of a non-volatile matter content of the coating agent composition, a content of the photocatalyst particles is 1 to 80 parts by mass, a content of the cuprous oxide particles is 0.1 to 5 parts by mass, and a total content of the photocatalyst particles and the metal oxide particles is 40 to 80 parts by mass.

Abstract: A coating agent composition of the present invention contains photocatalyst particles composed of metal oxide in which an upper end potential of a valence band is 3 V (vs SHE) or more and a lower end potential of a conduction band is 0.16 V (vs SHE) or less. Moreover, the coating agent composition contains cuprous oxide particles, metal oxide particles without photocatalytic activity, a binder resin, and an organic solvent. Then, in 100 parts by mass of a non-volatile matter content of the coating agent composition, a content of the photocatalyst particles is 1 to 80 parts by mass, a content of the cuprous oxide particles is 0.1 to 5 parts by mass, and a total content of the photocatalyst particles and the metal oxide particles is 40 to 80 parts by mass.

Abstract: Object of the present invention is to provide visible light-responsive photocatalyst coating material which can form a coating film exhibiting superior allergen inactivation property through irradiation of visible light. The visible light-responsive photocatalyst coating material comprises: photocatalyst material having visible light-activity composed of metal oxide particle with divalent copper salt supported on the surface thereof, said metal oxide particle having optical semiconductor-characteristics and potential of valence band of said metal oxide particle being 3[V] or more (vs. SHE, pH=0); binder component including component having siloxane bond or component forming siloxane bond through reaction; and chloride ionic compound. When visible light is irradiated to the coating film, the metal oxide particle exhibits photocatalyst activity in the presence of the copper-divalent ion and chloride ion, thereby significantly high allergen inactivation property is exhibited.

Abstract: A divalent copper salt and/or trivalent iron salt is supported on a surface of a metal ion-doped titanium oxide obtained by doping titanium oxide with metal ions to give a metal ion-doped titanium oxide with a valence band potential of 3 V or more (vs. SHE, pH=0) and a bandgap of 3 V or less between the valence band and an energy level of electrons excited from the valence band (including conduction band minimum potential and isolated potential). The metal ion-doped titanium oxide can be made to exhibit strong oxidative decomposition activity when irradiated with visible light based on the fact the divalent copper salt or trivalent iron salt functions as a catalyst for multi-electron reduction of oxygen.

Abstract: The present invention provides a tungsten trioxide microparticle carrying on its surface divalent copper salt. The divalent copper salt is utilized to perform a multi-electron reduction of oxygen. The tungsten trioxide exhibits a high oxidative decomposition activity when exposed to visible light.

Abstract: Object of the present invention is to provide visible light-responsive photocatalyst coating material which can form a coating film exhibiting superior allergen inactivation property through irradiation of visible light. The visible light-responsive photocatalyst coating material comprises: photocatalyst material having visible light-activity composed of metal oxide particle with divalent copper salt supported on the surface thereof, said metal oxide particle having optical semiconductor-characteristics and potential of valence band of said metal oxide particle being 3[V] or more (vs. SHE, pH=0); binder component including component having siloxane bond or component forming siloxane bond through reaction; and chloride ionic compound. When visible light is irradiated to the coating film, the metal oxide particle exhibits photocatalyst activity in the presence of the copper-divalent ion and chloride ion, thereby significantly high allergen inactivation property is exhibited.

Abstract: A divalent copper salt and/or trivalent iron salt is supported on a surface of a metal ion-doped titanium oxide obtained by doping titanium oxide with metal ions to give a metal ion-doped titanium oxide with a valence band potential of 3 V or more (vs. SHE, pH=0) and a bandgap of 3 V or less between the valence band and an energy level of electrons excited from the valence band (including conduction band minimum potential and isolated potential). The metal ion-doped titanium oxide can be made to exhibit strong oxidative decomposition activity when irradiated with visible light based on the fact the divalent copper salt or trivalent iron salt functions as a catalyst for multi-electron reduction of oxygen.

Abstract: The present invention provides a tungsten trioxide microparticle carrying on its surface divalent copper salt. The divalent copper salt is utilized to perform a multi-electron reduction of oxygen. The tungsten trioxide exhibits a high oxidative decomposition activity when exposed to visible light.

Abstract: An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]?2.123×1021exp(?1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.

Abstract: An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula: [Oi]?2.123×1021exp(?1.035/k(T+273)), where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.

Abstract: In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.

Abstract: In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.