Patents by Inventor Shinichiro NOZAKI
Shinichiro NOZAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11962122Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.Type: GrantFiled: July 10, 2019Date of Patent: April 16, 2024Assignee: PANASONIC HOLDINGS CORPORATIONInventors: Hiroyuki Hagino, Shinichiro Nozaki
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Publication number: 20230155346Abstract: Semiconductor light emitting device includes semiconductor light emitting element and submount that includes mounting surface, semiconductor light emitting element includes: semiconductor multilayer structure that includes opposite surface opposite mounting surface and emission surface; and mounting electrode that is arranged on opposite surface and extends in a direction of emission of light, emission surface is located outside of an end portion of mounting surface, groove is formed in opposite surface of semiconductor multilayer structure to extend along mounting electrode in the direction of emission, and a first distance between emission surface and groove is greater than zero and less than a second distance between emission surface and mounting surface.Type: ApplicationFiled: January 19, 2023Publication date: May 18, 2023Inventor: Shinichiro NOZAKI
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Patent number: 11637008Abstract: A plasma lamp for use in a broadband plasma source of an inspection tool is disclosed. The plasma lamp includes a plasma bulb configured to contain a gas and generate a plasma within the plasma bulb. The plasma bulb is formed from a material at least partially transparent to illumination from a pump laser and at least a portion of broadband radiation emitted by the plasma. The plasma bulb includes a conical pocket. The conical pocket is configured to disrupt a plume rising from the plasma.Type: GrantFiled: August 18, 2022Date of Patent: April 25, 2023Assignees: KLA CORPORATION, USHIO, INC.Inventors: Sumeet Kumar, Joshua Wittenberg, Mark S. Wang, Rajkeshar Singh, Yoshio Kagebayashi, Shinichiro Nozaki
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Publication number: 20230072452Abstract: A reflectivity of an end surface protective film of a semiconductor laser element is made less than or equal to 1% in a wide wavelength range. Semiconductor laser element includes semiconductor stack body having front end surface and rear end surface, and end surface protective film disposed on front end surface of semiconductor stack body. End surface protective film includes first dielectric layer disposed on front end surface and second dielectric layer stacked outside first dielectric layer. Second dielectric layer includes first layer stacked on first dielectric layer, second layer stacked on first layer, and third layer stacked on second layer. For wavelength ?, of a laser beam, refractive index n2 of second layer is higher than refractive index n1 of first layer and refractive index n3 of third layer, and a film thickness of second layer ranges from ?(8n2) to 3?(4n2) inclusive.Type: ApplicationFiled: March 2, 2021Publication date: March 9, 2023Inventors: ATSUNORI MOCHIDA, SHINICHIRO NOZAKI, MASANORI ERA
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Publication number: 20220416508Abstract: The semiconductor laser element includes: a substrate; a first semiconductor layer disposed above a main surface of the substrate; an active layer that is disposed above the first semiconductor layer and generates light; and a second semiconductor layer) disposed above the active layer. In a top view of a front-side end portion of the semiconductor laser element from which the light is emitted, an end surface of the second semiconductor layer includes an inclined portion with respect to an end surface of the first semiconductor layer.Type: ApplicationFiled: November 10, 2020Publication date: December 29, 2022Inventors: Hiroyuki HAGINO, Shinichiro NOZAKI
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Publication number: 20220360050Abstract: A semiconductor light emitting device includes a substrate and a semiconductor multilayer stacked on the substrate. The semiconductor multilayer includes an n-side clad layer stacked above the substrate, an active layer stacked above the n-side clad layer, and a p-side clad layer stacked above the active layer. The semiconductor multilayer includes a first plane perpendicular to a stacking direction in which the semiconductor multilayer is stacked, and a lattice constant inside the first plane is an anisotropy constant.Type: ApplicationFiled: July 21, 2020Publication date: November 10, 2022Inventor: Shinichiro NOZAKI
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Patent number: 11451010Abstract: A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.Type: GrantFiled: August 2, 2018Date of Patent: September 20, 2022Assignee: PANASONIC HOLDINGS CORPORATIONInventors: Shinichiro Nozaki, Takuma Katayama
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Publication number: 20220263288Abstract: A semiconductor laser device, which outputs laser light, includes: a substrate; an n-type semiconductor layer disposed above the substrate; a light emitting layer disposed above the n-type semiconductor layer; a p-type semiconductor layer disposed above the light emitting layer; and at least one p electrode disposed above the p-type semiconductor layer. At least one groove is formed that extends from an upper surface of the p-type semiconductor layer to reach a lower surface of the light emitting layer, and extends in a resonance direction of the laser light. A remaining length, which is a distance between an output end face from which the laser light is outputted and a portion of each groove that is closest to the at least one p electrode, is longer than a non-injection region length, which is a distance between the output end face and the at least one p electrode.Type: ApplicationFiled: August 17, 2020Publication date: August 18, 2022Inventor: Shinichiro NOZAKI
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Patent number: 11398715Abstract: A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.Type: GrantFiled: December 19, 2018Date of Patent: July 26, 2022Assignee: PANASONIC HOLDINGS CORPORATIONInventors: Shinichiro Nozaki, Shinichi Takigawa
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Publication number: 20210296851Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.Type: ApplicationFiled: July 10, 2019Publication date: September 23, 2021Inventors: Hiroyuki HAGINO, Shinichiro NOZAKI
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Publication number: 20210249837Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.Type: ApplicationFiled: April 22, 2021Publication date: August 12, 2021Inventor: Shinichiro NOZAKI
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Patent number: 11018472Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.Type: GrantFiled: January 24, 2020Date of Patent: May 25, 2021Assignee: PANASONIC CORPORATIONInventor: Shinichiro Nozaki
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Patent number: 10892597Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.Type: GrantFiled: June 28, 2017Date of Patent: January 12, 2021Assignee: PANASONIC CORPORATIONInventors: Hiroyuki Hagino, Osamu Imafuji, Shinichiro Nozaki
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Publication number: 20200412102Abstract: A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.Type: ApplicationFiled: December 19, 2018Publication date: December 31, 2020Inventors: Shinichiro NOZAKI, Shinichi TAKIGAWA
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Publication number: 20200227895Abstract: Provided is a semiconductor laser element including: a substrate; and a laser array section located above the substrate and having a plurality of light emitting parts which are arranged next to each other and which emit laser beams, wherein when the wavelengths of the laser beams respectively emitted from the plurality of light emitting parts are plotted in correspondence with the positions of the plurality of light emitting parts, among a plurality of points respectively corresponding to the wavelengths plotted, the point with an extreme value is not located at a position corresponding to the center of the laser array section and is located at a position corresponding to a place separated from the center of the laser array section.Type: ApplicationFiled: July 10, 2018Publication date: July 16, 2020Inventors: Shinichi TAKIGAWA, Shinichiro NOZAKI
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Publication number: 20200220331Abstract: A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.Type: ApplicationFiled: August 2, 2018Publication date: July 9, 2020Inventors: Shinichiro NOZAKI, Takuma KATAYAMA
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Publication number: 20200185879Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.Type: ApplicationFiled: January 24, 2020Publication date: June 11, 2020Inventor: Shinichiro NOZAKI
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Patent number: 10581218Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.Type: GrantFiled: May 22, 2018Date of Patent: March 3, 2020Assignee: Panasonic CorporationInventor: Shinichiro Nozaki
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Publication number: 20190245322Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.Type: ApplicationFiled: June 28, 2017Publication date: August 8, 2019Inventors: Hiroyuki HAGINO, Osamu IMAFUJI, Shinichiro NOZAKI
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Publication number: 20190021158Abstract: A laser-driven light source device includes a laser oscillation unit configured to emit laser light, and a plasma vessel configured to contain and seal a discharge medium therein. The laser-driven light source device also includes an optical system configured to condense the laser light emitted from the laser oscillation unit, and direct the laser light to an inside of the plasma vessel to generate a plasma. The laser oscillation unit includes a control unit configured to perform an on/off control on the generation of the laser light to modulate an output of the laser light such that the laser light is generated during an on-time of several ?sec to several msec and the laser light is not generated during an off-time. The off-time is decided such that the plasma in the plasma vessel does not disappear.Type: ApplicationFiled: July 10, 2018Publication date: January 17, 2019Applicant: USHIO DENKI KABUSHIKI KAISHAInventor: Shinichiro NOZAKI