Abstract: Provided is a method for producing a thermoplastic elastomer composition that can form a molded article having both good appearance and high stiffness. The method for producing a thermoplastic elastomer composition comprises the following first step and second step, wherein the produced thermoplastic elastomer composition contains 5 mass % or less of a mineral oil (C): first step: a step of melt-kneading polypropylene (A-1) and an ethylene-based copolymer rubber (B) in the presence of an organic peroxide, the polypropylene (A-1) being polypropylene of which 20° C. xylene insoluble fraction has an intrinsic viscosity [?cxis] of 0.1 dl/g or more and less than 1.5 dl/g; and second step: a step of further adding polypropylene (A-2) of which 20° C. xylene insoluble fraction has an intrinsic viscosity [?cxis] of 1.5 dl/g or more and 7 dl/g or less, and melt-kneading the resulting mixture.

Abstract: Provided is a method for producing a thermoplastic elastomer composition that can form a molded article having both good appearance and high stiffness. The method for producing a thermoplastic elastomer composition comprises the following first step and second step, wherein the produced thermoplastic elastomer composition contains 5 mass % or less of a mineral oil (C): first step: a step of melt-kneading polypropylene (A-1) and an ethylene-based copolymer rubber (B) in the presence of an organic peroxide, the polypropylene (A-1) being polypropylene of which 20° C. xylene insoluble fraction has an intrinsic viscosity [?cxis] of 0.1 dl/g or more and less than 1.5 dl/g; and second step: a step of further adding polypropylene (A-2) of which 20° C. xylene insoluble fraction has an intrinsic viscosity [?cxis] of 1.5 dl/g or more and 7 dl/g or less, and melt-kneading the resulting mixture.

Abstract: A substrate processing apparatus includes: a processing vessel having an opening; a cover body configured to close the opening; a cover body moving mechanism configured to move the cover body between a closed position and an open position; a substrate holder configured to horizontally hold a substrate; a fluid supply device configured to supply a processing fluid in a supercritical state and a fluid in a gas state to the processing vessel; and a controller configured to control the fluid supply device such that the processing fluid is supplied to the processing vessel in a first state in which the substrate is held by the substrate holder and the cover body is located at the closed position, and such that the fluid is supplied to the processing vessel in a second state in which the cover body is located at the open position.

Abstract: A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.

Abstract: A substrate processing method according to the present disclosure includes heating and removing. The heating includes heating a substrate with a copper film that is formed thereon. The removing includes removing a copper film that is formed on a peripheral part of the substrate after the heating by supplying a processing liquid that contains an acidic chemical liquid to the peripheral part.

Abstract: A substrate processing method according to the present disclosure includes heating and removing. The heating includes heating a substrate with a copper film that is formed thereon. The removing includes removing a copper film that is formed on a peripheral part of the substrate after the heating by supplying a processing liquid that contains an acidic chemical liquid to the peripheral part.

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract: A process liquid changing method is provided for changing process liquids in a substrate processing apparatus including storage tank, a circulation line with a circulation pump, and a process liquid supply nozzle connected to the circulation line through a branch line. The method includes: discharging the process liquid in the storage tank; discharging a process liquid remaining in the circulation line from a drain connected to the circulation line at a second position of the circulation line, while supplying a purge gas to the circulation line at a first position of the circulation line, wherein the first position is located upstream of a junction area where the branch line is connected to the circulation line, and the second position is located downstream of the junction area and upstream of the storage tank; and supplying a process liquid into the storage tank.

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract: A substrate processing apparatus that includes a process tank having a pair of opposed sidewalls for storing a chemical liquid, and processing a plurality of substrates by the chemical liquid; a substrate holding mechanism including a holding part for holding the plurality of substrates, and a back part connected to the holding part and interposed between the substrates held by the holding part and one sidewall of the pair of opposed sidewalls when the substrate holding mechanism is loaded into the process tank. A heating device is disposed on the process tank for heating the stored chemical liquid. The heating device includes at least a first heater disposed on the one sidewall, and a second heater disposed on the other sidewall of the pair of opposed sidewalls. Energy outputs of the first heater and the second heater are independently controlled.

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract: A substrate processing apparatus according to the present invention includes a process tank including a pair of opposed sidewalls, storing a chemical liquid therein and processing a plurality of substrates by the chemical liquid; a substrate holding mechanism including a holding part holding the plurality of substrates, and a back part connected to the holding part and interposed between the substrates held by the holding part and one of the pair of sidewalls when the substrate holding mechanism is loaded into the process tank. A heating device is disposed on the process tank and heats the stored chemical liquid. The heating device includes a first heating device disposed on the one sidewall, and a second heating device disposed on the other sidewall. Outputs of the first heating device and the second heating device are independently controlled.

Abstract: Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).

Abstract: Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).

Abstract: Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).