Abstract: Proposed are non-invasive diagnostic method and apparatus for plasma processes in which plasma processes can be monitored in real time by measuring a surface wave resonance frequency generated in plasma or a sheath on the basis of a surface wave resonance principle. The diagnostic method may include a step (S10) of installing at least one probe on one side of an electrostatic chuck (ESC) or on an inner wall of a chamber, a step (S20) of emitting a high frequency onto the plasma or the sheath by the probe, and a step (S30) of detecting a frequency reflected from the plasma or the sheath by the probe. In addition, the diagnostic method may include the step (S40) of extracting a reflection spectrum, a step (S50) of extracting the surface wave resonance frequency, and a step (S60) of extracting electron density or uniformity of the plasma.

Abstract: A substrate processing apparatus and method includes a chamber, a remote plasma source outside the chamber to provide activated ammonia and activated hydrogen fluoride into the chamber, and a direct plasma source to provide ion energy to a substrate inside the chamber. The plasma source includes ground electrodes extending in a first direction on a first plane perpendicularly spaced apart from a plane on which the substrate is disposed and defined by the first direction and a second direction perpendicular to the first direction and power electrodes disposed between the ground electrodes, extending in the first direction parallel to each other and receiving power from an RF power source to generate plasma between adjacent ground electrodes. The activated ammonia and the activated hydrogen fluoride are supplied on the substrate through a space between the power electrode and the ground electrode.