Abstract: There is provided a wavelength conversion member including: a fluorescent body and a reflective film. The fluorescent body is configured to emit fluorescence by an excitation light and has an incident surface into which the excitation light comes and a rear surface which faces the incident surface. The reflective film is arranged on a side of the rear surface of the fluorescent body and includes a metal layer and ceramic particles dispersed in the metal layer. The ceramic particles are crystalline, and a melting point of the ceramic particles is higher than a melting point of a metal constructing the metal layer.

Abstract: A fluorescent plate includes a fluorescent phase which emits fluorescence by excitation light, a light-transmitting phase which allows passage of the excitation light, and a plurality of voids surrounded by the fluorescent phase and the light-transmitting phase, wherein, in a cross section of the fluorescent plate including cross sections of the voids, an average ratio of a portion of the circumference of a void, which portion is in contact with the fluorescent phase to the entire circumference of the void, is higher than an area ratio of the area of the fluorescent phase present in the fluorescent plate to the total area of the fluorescent phase and the light-transmitting phase present in the fluorescent plate.

Abstract: A fluorescent plate including a fluorescent phase which emits fluorescence by excitation light, and a plurality of voids, wherein, in a cross section of the fluorescent plate including cross sections of the voids, voids having an equivalent circle diameter of 0.4 micrometers or greater and 50 micrometers or smaller have a standard deviation in equivalent circle diameter of 1.5 or less.

Abstract: A fluorescent plate including a fluorescent phase which emits fluorescence by excitation light, and a plurality of voids, wherein, in a cross section of the fluorescent plate including cross sections of the voids, voids having an equivalent circle diameter of 0.4 micrometers or greater and 50 micrometers or smaller have a standard deviation in equivalent circle diameter of 1.5 or less.

Abstract: A fluorescent plate includes a fluorescent phase which emits fluorescence by excitation light, and a plurality of voids. The plurality of voids include a plurality of particular voids having an equivalent circle diameter of 0.4 micrometers or greater and 50 micrometers or smaller. In a cross section of the fluorescent plate, the ratio of the number of the particular voids having a circularity greater than 0.6 and 1 or less to the total number of the plurality of particular voids is 50% or greater.

Abstract: A fluorescent plate includes a fluorescent phase which emits fluorescence by excitation light, a light-transmitting phase which allows passage of the excitation light, and a plurality of voids surrounded by the fluorescent phase and the light-transmitting phase, wherein, in a cross section of the fluorescent plate including cross sections of the voids, an average ratio of a portion of the circumference of a void, which portion is in contact with the fluorescent phase to the entire circumference of the void, is higher than an area ratio of the area of the fluorescent phase present in the fluorescent plate to the total area of the fluorescent phase and the light-transmitting phase present in the fluorescent plate.

Abstract: An optical wavelength converter (1) is configured such that an optical wavelength conversion member (9) is bonded to a heat dissipation member (13) having superior heat dissipation property. Thus, heat generated by light incident on the optical wavelength conversion member (9) can be efficiently dissipated. Therefore, even when high-energy light is incident on the optical wavelength converter, temperature quenching is less likely to occur, and thus high fluorescence intensity can be maintained. An intermediate film (21) is disposed between a reflective film (19) and a bonding portion (15). The presence of the intermediate film (21) improves the adhesion between the reflective film (19) and the bonding portion (15), thereby enhancing the heat dissipation from the optical wavelength conversion member (9) to the heat dissipation member (13). Thus, the temperature quenching of the optical wavelength conversion member (9) can be prevented, thereby enhancing fluorescence intensity.

Abstract: An optical wavelength conversion member according to one aspect of the present disclosure includes a ceramic sintered body, wherein the ceramic sintered body has a fluorescent phase containing, as a main. component, fluorescent crystal grains that generate fluorescence in response to incident light, and a translucent phase containing translucent crystal grains as a main component. The optical wavelength conversion member includes a metal layer having light reflectivity and provided on a side of the ceramic sintered body opposite the side on which the light is incident, and a dielectric multilayer film including dielectric layers having different optical refractive indices and provided between the ceramic sintered body and the metal layer.

Abstract: An optical wavelength converter (1) is configured such that an optical wavelength conversion member (9) is bonded to a heat dissipation member (13) having superior heat dissipation property. Thus, heat generated by light incident on the optical wavelength conversion member (9) can be efficiently dissipated. Therefore, even when high-energy light is incident on the optical wavelength converter, temperature quenching is less likely to occur, and thus high fluorescence intensity can be maintained. An intermediate film (21) is disposed between a reflective film (19) and a bonding portion (15). The presence of the intermediate film (21) improves the adhesion between the reflective film (19) and the bonding portion (15), thereby enhancing the heat dissipation from the optical wavelength conversion member (9) to the heat dissipation member (13). Thus, the temperature quenching of the optical wavelength conversion member (9) can be prevented, thereby enhancing fluorescence intensity.

Abstract: In a manufacturing method for a thermistor element (3) including: a thermistor portion (49) which is a sintered body formed from a thermistor material; and a pair of electrode wires (25) which are embedded in the thermistor portion (49) and at least one end portion of each of the electrode wires projects at an outer side of the thermistor portion (49), the resistance value of the thermistor element (3) is adjusted by performing a removal processing of removing a part of the thermistor portion (49).

Abstract: In a manufacturing method for a thermistor element (3) including: a thermistor portion (49) which is a sintered body formed from a thermistor material; and a pair of electrode wires (25) which are embedded in the thermistor portion (49) and at least one end portion of each of the electrode wires projects at an outer side of the thermistor portion (49), the resistance value of the thermistor element (3) is adjusted by performing a removal processing of removing a part of the thermistor portion (49).

Abstract: A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1aM2bMncAldCreOf wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005?a<1.000, 0<b?0.400, 0?c<0.150, 0.400?d<0.950, 0.050<e?0.600, 0.50<e/(c+e)?1.00, and 2.80?f?3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.

Abstract: A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1aM2bMncAldCreOf wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005?a<1.000, 0<b?0.400, 0?c<0.150, 0.400?d<0.950, 0.050<e?0.600, 0.50<e/(c+e)?1.00, and 2.80?f?3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.

Abstract: A conductive sintered oxide which includes: a conductive crystal phase having a perovskite structure represented by (RE1-cSrc)MdO3, in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE2O3, and a second insulating crystal phase represented by SrAl2O4. The conductive crystal phase has a coefficient c satisfying 0.18<c<0.50 and has a coefficient d satisfying 0.67?d?0.93. A content of a third insulating crystal phase represented by RE4Al2O9, the content of which may be zero, is smaller than the content of each of the first and second insulating crystal phases.

Abstract: A conductive sintered oxide including: a first crystal phase represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-cSLc)(AlxM1y)O3. RE1 is a first element group consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La. RE2 is a second element group consisting of at least one element selected from Group IIIA elements excluding La and including at least one of the elements constituting the first element group RE1. SL is an element group consisting of at least one of Sr, Ca and Mg and which includes Sr as a main element, and M1 is an element group consisting of at least one element selected from Groups IVA, VA, VIA, VIIA and VIII excluding Cr. The coefficient c is in the range of 0.18<c<0.50, and the coefficients x and y are in the range of 0.95?x+y?1.1.

Abstract: A sintered electroconductive oxide forming a thermistor element has a first crystal phase having a composition represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-aSLa)MO3. The factor a of the second crystal phase is: 0.18<a<0.50, wherein RE1 represents at least one of Yb and Lu and at least one species selected from among group 3A elements excluding Yb, Lu, and La; RE2 represents at least one species selected from among group 3A elements excluding La and which contains at least one species selected from the group RE1; M represents Al and at least one species selected from group 4A to 7A, and 8 elements; and SL represents Sr, Ca, and Mg, with at least Sr being included at a predominant proportion by mole.

Abstract: An imaging device includes pixels configured to sequentially output image signals for an infrared radiation having a first wavelength, an infrared radiation having a second wavelength and an infrared radiation having a third wavelength. A first pixel has the sensitivity to a first color of a primary color and outputting a first signal in response to reception of the infrared radiation having the shortest wavelength of the first wavelength, the second wavelength and the third wavelength. A second pixel has the sensitivity to a second color of the primary color and outputting a second signal in response to the reception of the infrared radiation having the shortest wavelength. A discriminating circuit is configured to compare the first signal and the second signal with each other to discriminate a reception timing of an infrared radiation having a selected wavelength in response to a relative sensitivity ratio.

Abstract: A conductive sintered oxide which includes: a conductive crystal phase having a perovskite structure represented by (RE1-cSrc)MdO3, in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE2O3, and a second insulating crystal phase represented by SrAl2O4. The conductive crystal phase has a coefficient c satisfying 0.18<c<0.50 and has a coefficient d satisfying 0.67?d?0.93. A content of a third insulating crystal phase represented by RE4Al2O9, the content of which may be zero, is smaller than the content of each of the first and second insulating crystal phases.

Abstract: A conductive sintered oxide including: a first crystal phase represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-cSLc)(AlxM1y)O3. RE1 is a first element group consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La. RE2 is a second element group consisting of at least one element selected from Group IIIA elements excluding La and including at least one of the elements constituting the first element group RE1. SL is an element group consisting of at least one of Sr, Ca and Mg and which includes Sr as a main element, and M1 is an element group consisting of at least one element selected from Groups IVA, VA, VIA, VIIA and VIII excluding Cr. The coefficient c is in the range of 0.18<c<0.50, and the coefficients x and y are in the range of 0.95?x+y?1.1.

Abstract: A sintered electroconductive oxide (1) forming a thermistor element (2) has a first crystal phase having a composition represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-aSLa)MO3, and that the factor a of the second crystal phase satisfies the following condition: 0.18<a<0.50, wherein RE1 represents a first element group consisting of at least one of Yb and Lu and at least one species selected from among group 3A elements excluding Yb, Lu, and La; RE2 represents a second element group which contains at least one species selected from among group 3A elements excluding La and which contains at least one species selected from the first element group RE1; M represents an element group consisting of Al and at least one species selected from group 4A to 7A, and 8 elements; and SL represents an element group consisting of Sr, Ca, and Mg, with at least Sr being included at a predominant proportion by mole.