Abstract: Provided are a radiation sensor having a first flexible substrate provided with a phosphor layer which converts incident radiation into an electromagnetic wave in a wavelength region that is at least different from that of the radiation; an organic photoelectric conversion layer which includes a charge transport layer and a charge generation layer containing a charge transporting agent and 55% by mass to 75% by mass of a polymer binder, and photoelectrically converts the electromagnetic wave; a second flexible substrate provided with a charge detection layer which includes a storage capacitor and a thin film transistor and is adapted to read electrical charge generated at the organic photoelectric conversion layer; and a polymer subbing layer disposed between the organic photoelectric conversion layer and the charge detection layer, and a radiation image detection apparatus using the radiation sensor.

Abstract: Provided is a radiation sensor comprising: a phosphor layer that converts incident radiation into converted light containing a first light component having a first wavelength region that includes a maximum peak wavelength different from a maximum peak wavelength of the radiation, and a second light component having a second wavelength region of 400 nm to 460 nm, different from that of the radiation and the first wavelength region; an organic photoelectric conversion layer; and an insulating substrate provided with a charge detection layer, and that includes a storage capacitor and a thin film transistor having an oxide semiconductor active layer, wherein the first and second light components each pass through the organic photoelectric conversion layer and arrive at the oxide semiconductor active layer, and wherein an intensity of the second light component is lower than an intensity of the first light component.

Abstract: A radiological imaging device has a panel section which houses radiation conversion panels for converting radiation to a radiological image, and a control section which is disposed on the panel section and which controls the radiation conversion panels. The control section is thicker than the panel section, or protrudes from the panel section.

Abstract: A TFT is provided which includes on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a mean square interface roughness between the gate insulating layer and the active layer is less than 2 nm, a carrier concentration of the active layer is 1×1015 cm?3 or more, and a film thickness of the active layer is 0.5 nm or more and less than 20 nm. A TFT is provided which has high field effect mobility and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided.

Abstract: A radiation detecting apparatus includes a radiation conversion panel for detecting radiation that has passed through a subject and converting the detected radiation into radiation image information, and a casing for storing the radiation conversion panel as a roll when the subject is not being irradiated with radiation. When the subject is irradiated with radiation, the radiation conversion panel stored as a roll in the casing is unrolled and pulled out of the casing, and the radiation conversion panel is extended flatwise against the subject.

Abstract: A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5-1 and a drain electrode 5-2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer.

Abstract: A radiation detecting apparatus includes a flexible radiation conversion panel for detecting radiation that has passed through a subject and converting the detected radiation into radiation image information, and grips disposed on ends of the radiation conversion panel. A hardness of the grips is greater than that of the radiation conversion panel. Holes are formed in the grips for enabling the grips to be gripped.

Abstract: A radiation detecting apparatus includes a radiation conversion panel for detecting the radiation which has passed through the subject and converting the detected radiation into radiation image information, a temperature sensor for detecting a temperature of the radiation conversion panel, and a sensitivity corrector for correcting at least one of a sensitivity, a dark current, a density step, and a residual image of the radiation conversion panel based on the temperature detected by the temperature sensor.

Abstract: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle ? of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as ?.

Abstract: An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5?x?1.5, in a concentration falling within the range of 0.003 mol % to 0.03 mol %.

Abstract: A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer.

Abstract: A molding machine for production of gas hydrate pellets under a high pressure in gas hydrate forming conditions, which is inexpensive through minimizing of the use of expensive mechanical seal. The molding machine comprises two forming rolls each fitted to a rotary shaft whose both ends are supported by bearings; a drive unit for rotating the forming rolls; a screw transfer unit for supplying powder to the forming rolls; and a high-pressure vessel, wherein the bearings, the rotary shaft and the forming rolls are all disposed in the high-pressure vessel.

Abstract: A power supply device according to the present invention includes: a capacitor 10 connected in parallel with a battery; two switching circuits 31,32 connected in series with the capacitor 10; a pre-charge switching circuit 33 connected in parallel with one of the two switching circuits 31,32; and a control unit 14 that, when a voltage of the capacitor 10 is lower than a voltage of the battery 1, controls the pre-charge switching circuit 33 and the switching circuit 32 and performs pre-charging current limitation for the capacitor 10.

Abstract: Disclosed is an electromagnetic wave information detection apparatus, including a photoelectric converter including first and second electrode layers; a charge generation layer that generates positive and negative charges by irradiation of an electromagnetic wave; and a charge transport layer; an electric potential imparting unit that imparts electric potentials to the first and second electrode layers; a detection unit; and a control unit controlling the electric potential imparting unit and the detection unit such that the electric potentials of the first and second electrode layers are equalized during a predetermined period of time between a process of imparting detection electric potentials to the first and second electrode layers to detect information carried by an electromagnetic wave of a previous irradiation and a process of imparting the detection electric potentials to the first and second electrode layers to detect information carried by an electromagnetic wave of a subsequent irradiation.

Abstract: A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a carrier concentration of the active layer is 3×1017 cm?3 or more and a film thickness of the active layer is 0.5 nm or more and less than 10 nm. A TFT is provided which has a low OFF current and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided.

Abstract: Provided is a radiation sensor comprising: a phosphor layer that converts incident radiation into converted light containing a first light component having a first wavelength region that includes a maximum peak wavelength different from a maximum peak wavelength of the radiation, and a second light component having a second wavelength region of 400 nm to 460 nm, different from that of the radiation and the first wavelength region; an organic photoelectric conversion layer; and an insulating substrate provided with a charge detection layer, and that includes a storage capacitor and a thin film transistor having an oxide semiconductor active layer, wherein the first and second light components each pass through the organic photoelectric conversion layer and arrive at the oxide semiconductor active layer, and wherein an intensity of the second light component is lower than an intensity of the first light component.

Abstract: Provided are a radiation sensor having a first flexible substrate provided with a phosphor layer which converts incident radiation into an electromagnetic wave in a wavelength region that is at least different from that of the radiation; an organic photoelectric conversion layer which includes a charge transport layer and a charge generation layer containing a charge transporting agent and 55% by mass to 75% by mass of a polymer binder, and photoelectrically converts the electromagnetic wave; a second flexible substrate provided with a charge detection layer which includes a storage capacitor and a thin film transistor and is adapted to read electrical charge generated at the organic photoelectric conversion layer; and a polymer subbing layer disposed between the organic photoelectric conversion layer and the charge detection layer, and a radiation image detection apparatus using the radiation sensor.

Abstract: A radiographic image detector includes: a bias electrode transmitting a recording electromagnetic wave carrying image information; a recording photoconductive layer consisting primarily of a-Se, the recording photoconductive layer generating electric charges when exposed to the recording electromagnetic wave transmitted through the bias electrode; and a number of charge detecting elements two-dimensionally arrayed in directions perpendicular to each other, each charge detecting element comprising a charge storage section for storing the electric charge generated at the recording photoconductive layer and a switching element for reading out an electric charge signal of the electric charge stored in the charge storage section. The radiographic image detector further includes a thin fluoride layer provided between the bias electrode and the recording photoconductive layer.

Abstract: This invention provides a radiographic imaging device, having: a scintilator layer which converts transmitted radiation incident with emission of radiation to an imaging target to light; a first organic photoelectric conversion layer which is continuous and converts a first light containing the maximum peak wavelength from the scintilator layer to a charge; an insulating substrate having a storage capacitor and a thin film transistor for reading the charge generating in the first organic photoelectric conversion layer for each image detection pixel; a second organic photoelectric conversion layer which converts a second light from the scintilator layer to a charge; and a radiation dose detection circuit for reading the charge generating in the second organic photoelectric conversion layer for each radiation dose detection pixel and a radiographic imaging system using the same.

Abstract: In a radiation detecting system including an electric voltage imparting electrode through which a bias electric voltage is applied, a recording photoconductive layer which comprises a-Se and generates electric charges in response to receipt of projection of radiation, a carrier collecting electrode, a charge storing portion which stores electric charges generated in the recording photoconductive layer and a switching element for reading out charge signal stored in the charge storing portion, superposed one on another in this order, an organic resin dielectric layer which is not smaller than 0.01 ?m and smaller than 1 ?m in thickness, not lower than 1012 ?cm in specific resistance and 6×10?6 to 1.5×10?4/° C. in thermal expansion coefficient is provided between the recording photoconductive layer and the electric voltage imparting electrode.