Abstract: A semiconductor device in embodiments, may include a device region having: two active trenches, each having at least a gate electrode. Two insulated trenches each having an electrode may be formed between the two active trenches separated by a junction. First p-doped layers may be provided between a first active trench and a first insulated trench, and between a second active trenches and a second insulated trench. Second p-doped layers may be provided between a first insulated trench and a second insulated trench with the junction arranged therebetween. The second p-doped layers may be provided on an external surface of the respective first one and second one of the two insulated trenches at a depth and a thickness set to form a current path when the power semiconductor device is in an OFF state.

Abstract: A semiconductor device that includes a semiconductor substrate; a trench in the semiconductor substrate; a gate electrode in the trench; a source electrode in the trench, the source electrode being disposed between the gate electrode and a bottom wall of the trench; a partitioning layer in the trench, the partitioning layer extending between the gate electrode and the source electrode; and an insulating film in the trench.

Abstract: A semiconductor device includes: three or more transistors, which are formed on a semiconductor substrate and arranged in one direction; and a PN junction diode, which is formed in a part of a region between the transistors, wherein each of the transistors includes: a trench: a conductive region; and an insulating film, wherein a first thickness of a first insulating film is a thickness between an end portion of a first conductive region on a bottom surface side of the first trench and a bottom surface of the first trench, wherein a second thickness of a second insulating film is a thickness between an end portion of a second conductive region on a bottom surface side of the second trench and a bottom surface of the second trench and wherein the first thickness is thicker than the second thickness.

Abstract: A semiconductor device includes: three or more transistors, which are formed on a semiconductor substrate and arranged in one direction; and a PN junction diode, which is formed in a part of a region between the transistors, wherein the transistor includes: a trench, which is formed inwardly from a front surface; and a conductive region in the trench; wherein a first trench is a trench of the transistor which is not adjacent to the PN junction diode, and a second trench is a trench of one or both of the two transistors adjacent to the PN junction diode, wherein a bottom surface of the first trench is formed in a semiconductor region of a first impurity concentration, and wherein a bottom surface of the second trench is formed in a semiconductor region of a second impurity concentration, which is higher than the first impurity concentration.

Abstract: A semiconductor device includes: a trench; a first electrode is formed in the trench; a first impurity region, which has a first conductivity type and is formed to abut on the trench; a second impurity region, which has a second conductivity type and is formed to abut the trench; an insulating film, which is formed on the front surface of the semiconductor substrate; a conductive plug, which is formed to penetrate through the insulating film and is electrically connected to the first impurity region and the second impurity region; wherein the conductive plug includes: a silicon layer made of silicon other than a single crystal; a silicide crystallite contained in the silicon layer; and a blocking layer that is formed to cover sides of the silicon layer and is made of a material that is impervious to the silicide crystallites.

Abstract: The scintillator plate has a reflective layer, a resinous anti-corrosion layer and a scintillator layer provided sequentially in that order on a heat resistant resin substrate. The scintillator plate is employed as a component for a flat panel radiation detector. The scintillator plate has a protective film between the scintillator layer and the flat light receiving element which makes up the flat panel radiation detector. There is point contact between the surface of the scintillator layer and the protective film and there is point contact between the flat light receiving element and the protective film.

Abstract: There is provided a scintillator plate which is superior in productivity, exhibits enhanced light extraction efficiency of a scintillator and enhanced sharpness and results in reduced deterioration in sharpness between flat light-receiving element surfaces. There are also provided a scintillator panel and a flat panel radiation detector by use thereof. The scintillator plate comprises a reflection layer, a resinous anticorrosion layer and a scintillator layer provided sequentially in this order on a heat-resistant resin substrate, wherein the scintillator plate is employed, as a component for a flat panel radiation detector, without being physicochemically adhered to the surface of a flat light-receiving element.

Abstract: There are provided a scintillator panel excellent in productivity and exhibiting enhanced emission-extracting efficiency and sharpness, resulting in reduced deterioration in sharpness between planar light-receiving element, and a radiation flat panel detector.

Abstract: A scintillator panel comprising a scintillator plate containing a substrate having thereon a reflective layer, a sublayer and a scintillator layer in that order, wherein the scintillator plate is sealed with: a first protective film provided on a side of the scintillator layer; and a second protective film provided on a side of the substrate opposite the scintillator layer, wherein the first protective layer is not adhered to the scintillator layer, and the second protective layer contains an aluminum layer.

Abstract: It is an object to provide a radiation image conversion panel exhibiting excellent properties in luminance and sharpness, and a preparation method thereof. Provided also is a drastically increased amount of stimulated luminescence of a post-manufacture radiation image conversion panel. Disclosed is a method for manufacturing a radiation image conversion panel in which a stimulable phosphor layer having a thickness of not less than 50 ?m is formed on a support vapor deposition and then is heat-treated, wherein a ratio of transmittance T/T0 (T represents transmittance after heat-treating, and T0 before heat-treating) at a stimulated luminescence wavelength of the stimulable phosphor is 0.5?T/T0?10. Also disclosed is a method for manufacturing a radiation image conversion panel via conducting a process of soaking in a halogenated solvent, as well as a process of heating a phosphor panel possessing a stimulable phosphor layer.

Abstract: An object is to provide that a moisture resistance property is maintained, and reduction of sharpness is further avoided. Disclosed is a scintillator plate possessing a support and provided thereon a phosphor layer, and further a protective film provided on the phosphor layer to protect the phosphor layer, wherein an arithmetical mean slope angle ?a of surface roughness of the protective film is 0.01-0.4.

Abstract: A scintillator plate which exhibits enhanced emission efficiency upon exposure to radiation and an improved time efficiency in manufacture of the plate is disclosed, comprising on a substrate a phosphor layer containing an activator and having been subjected to a plasma treatment.

Abstract: A method of producing a radiation image conversion panel containing the steps of: forming a stimulable phosphor layer on a substrate via a vapor deposition method to form a phosphor panel; heating the phosphor panel in a gas atmosphere of a halogen-containing solvent; and sealing the phosphor panel heated in the gas atmosphere of the halogen-containing solvent by sandwiching the phosphor panel between two resin films, followed by applying heat to peripheral edges of the two resin films to heat and fuse the resin films each other, wherein a lowest temperature of the heat is 150° C. or more.

Abstract: A scintillator panel comprising a scintillator plate containing a substrate having thereon a reflective layer, a sublayer and a scintillator layer in that order, wherein the scintillator plate is sealed with: a first protective film provided on a side of the scintillator layer; and a second protective film provided on a side of the substrate opposite the scintillator layer, wherein the first protective layer is not adhered to the scintillator layer, and the second protective layer contains an aluminum layer.

Abstract: A method of producing a radiation image conversion panel containing the steps of: forming a stimulable phosphor layer on a substrate via a vapor deposition method to form a phosphor panel; heating the phosphor panel in a gas atmosphere of a halogen-containing solvent; and sealing the phosphor panel heated in the gas atmosphere of the halogen-containing solvent by sandwiching the phosphor panel between two resin films, followed by applying heat to peripheral edges of the two resin films to heat and fuse the resin films each other, wherein a lowest temperature of the heat is 150° C. or more.

Abstract: A radiation image conversion panel containing: a stimulable phosphor plate having a stimulable phosphor layer on a substrate; a first protective film provided on a stimulable phosphor layer of the substrate, the first protective film not being adhered to the surface of the stimulable phosphor layer and having a peripheral area extending outside of substrate; and a second protective film provided on the opposite side of the substrate to the stimulable phosphor layer, the second protective film having a peripheral area extending outside of the substrate, wherein the peripheral area of the first protective film and the peripheral area of the second protective film are heat-sealed with each other; and the radiation image conversion panel has a dehydrating function to dehydrate a space surrounded by the first protective film and the second protective film.

Abstract: A method for producing a radiation image conversion panel containing the steps of: forming a stimulable phosphor layer on a substrate by a vapor deposition method to prepare a phosphor panel; hydrating the phosphor panel under a relative humidity of 30 to 60%; and sealing the phosphor panel with a moisture-proof protective film to prepare the radiation image conversion panel.

Abstract: A radiation image conversion panel comprising a phosphor sheet having a stimulable phosphor layer and a protective layer provided so as to cover the surface of the phosphor layer, wherein mean slope ?a of an outer surface of the protective layer not adjacent with the phosphor layer is from 0.01 to 0.1 and the surface roughness Ra in ?m of the inner side or the phosphor sheet side of the protective layer is 0.05 ?m to 0.45 ?m, and the stimulable phosphor layer is provided by a coating method.

Abstract: An object is to provide that a moisture resistance property is maintained, and reduction of sharpness is further avoided. Disclosed is a scintillator plate possessing a support and provided thereon a phosphor layer, and further a protective film provided on the phosphor layer to protect the phosphor layer, wherein an arithmetical mean slope angle ?a of surface roughness of the protective film is 0.01-0.4.

Abstract: A silver salt photothermographic dry imaging material comprising a support having thereon a photosensitive layer and a polymer layer, wherein the polymer layer comprises a copolymer of: (i) a fluorine containing acrylate or a fluorine containing methacrylate; and (ii) a monomer having a hydrophobic group in the molecule.