Abstract: A surface treatment liquid capable of hydrophobizing a surface of a treatment target without including a silylation agent, a surface treatment method using the liquid, and a method for suppressing pattern collapse, including surface treatment by the surface treatment method. The liquid contains a nitrogen-containing heterocyclic compound as a water-repelling agent. A compound including one or more hydrocarbon groups which may be substituted with a halogen atom in which a total number of carbon atoms of the one or more hydrocarbon group is three or more, is used as the nitrogen-containing heterocyclic compound. The liquid may include only a nitrogen-containing heterocyclic compound having the above-described predetermined structure, as a water-repelling agent.

Abstract: A method of forming a photosensitive resin layer including laminating a photosensitive resin layer including a chemically amplified positive-type photosensitive resin composition which includes an acid generator which generates an acid upon light exposure and generates an acid by heating on a metal surface having catalytic activity, a resin whose solubility in alkali increases under the action of an acid, and an organic solvent, on an catalytic activity-containing metal surface of a substrate; and heating the photosensitive resin layer, so that the solubility in alkali of the photosensitive resin layer increases as the layer becomes closer to an interface with the substrate.

Abstract: A surface treatment liquid capable of hydrophobizing a surface of a treatment target without including a silylation agent, a surface treatment method using the liquid, and a method for suppressing pattern collapse, including surface treatment by the surface treatment method. The liquid contains a nitrogen-containing heterocyclic compound as a water-repelling agent. A compound including one or more hydrocarbon groups which may be substituted with a halogen atom in which a total number of carbon atoms of the one or more hydrocarbon group is three or more, is used as the nitrogen-containing heterocyclic compound. The liquid may include only a nitrogen-containing heterocyclic compound having the above-described predetermined structure, as a water-repelling agent.

Abstract: A method of forming a photosensitive resin layer including laminating a photosensitive resin layer including a chemically amplified positive-type photosensitive resin composition which includes an acid generator which generates an acid upon light exposure and generates an acid by heating on a metal surface having catalytic activity, a resin whose solubility in alkali increases under the action of an acid, and an organic solvent, on an catalytic activity-containing metal surface of a substrate; and heating the photosensitive resin layer, so that the solubility in alkali of the photosensitive resin layer increases as the layer becomes closer to an interface with the substrate.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the acid generator component (B) including a sulfonium compound (B1) having a sulfonio group and an anion group represented by general formula (b1-r-1) shown below in one molecule thereof (wherein Y1 represents a divalent linking group or a single bond; L1 represents an ester bond or a single bond; V1 represents a divalent hydrocarbon group having a fluorine atom; and n represents 0 or 1, provided that, when L1 represents a single bond, n=1).

Abstract: A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.

Abstract: A method of forming a film including forming a film on a substrate by coating a composition for forming a film containing a solvent and a resin by a spin coating method, in which a maximum radius among the radii from the center to the outer periphery of the substrate is 150 mm or more and a thickness of the film is 50 ?m or more, a vapor pressure of the solvent at 25° C. is 0.4 kPa or less, and a viscosity of the solvent measured by a Cannon-Fenske viscometer at 25° C. is 1.5 mPa·s or less.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the acid generator component (B) including a sulfonium compound (B1) having a sulfonio group and an anion group represented by general formula (b1-r-1) shown below in one molecule thereof (wherein Y1 represents a divalent linking group or a single bond; L1 represents an ester bond or a single bond; V1 represents a divalent hydrocarbon group having a fluorine atom; and n represents 0 or 1, provided that, when L1 represents a single bond, n=1).

Abstract: A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.

Abstract: A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.

Abstract: A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.