Abstract: A continuous distillation-type trichlorosilane vaporization supply apparatus includes an evaporator including an introduction port for hydrogen gas as a carrier gas and having a heater that vaporizes liquid trichlorosilane; and a condenser including a cooling device to condense liquid at a temperature corresponding to a saturated vapor pressure, which is lower than a vapor pressure of the vaporized trichlorosilane gas, wherein a center line of the evaporator and a center line of the condenser are not on the same line, and a lower end of the condenser has a structure that communicates with a lower end of the evaporator through a pipe.

Abstract: A continuous distillation-type trichlorosilane vaporization supply apparatus includes an evaporator including an introduction port for hydrogen gas as a carrier gas and having a heater that vaporizes liquid trichlorosilane; and a condenser including a cooling device to condense liquid at a temperature corresponding to a saturated vapor pressure, which is lower than a vapor pressure of the vaporized trichlorosilane gas, wherein a center line of the evaporator and a center line of the condenser are not on the same line, and a lower end of the condenser has a structure that communicates with a lower end of the evaporator through a pipe.

Abstract: A process for manufacturing a silicon-germanium alloy comprising introducing SiH.sub.4 gas, GeCl.sub.4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750.degree. C., and depositing a thickly-grown, bulky silicon-germanium alloy upon the substrate within the reaction vessel.