Abstract: A semiconductor laser includes an active region, a first distributed-Bragg-reflector region disposed contiguously with the active region, and a second distributed-Bragg-reflector region. The first distributed-Bragg-reflector region is formed contiguously with one side of the active region in a waveguide direction and includes a first diffraction grating. The second distributed-Bragg-reflector region is formed contiguously with to the other side of the active region in the waveguide direction and includes a second diffraction grating. The first diffraction grating includes recessed portions formed through a diffraction grating layer formed in the first distributed-Bragg-reflector region and convex portions adjacent to the recessed portions. The diffraction grating layer is made of a dielectric material.

Abstract: An inference processing apparatus includes an input data storage unit that stores pieces X of input data, a learned NN storage unit that stores a piece W of weight data of a neural network, a batch processing control unit that sets a batch size on the basis of information on the pieces X of input data, a memory control unit that reads out, from the input data storage unit, the pieces X of input data corresponding to the set batch size, and an inference operation unit that batch-processes operation in the neural network using, as input, the pieces X of input data corresponding to the batch size and the piece W of weight data and infers a feature of the pieces X of input data.

Abstract: A semiconductor optical device that achieves both of heat dissipation and light confinement and permits efficient current injection or application of an electric field is implemented. The semiconductor optical device includes: a core layer including an active region (1) made of a compound semiconductor; two cladding layers (5, 6) injecting current into the core layer; and a third cladding layer (4) made of a material having a larger thermal conductivity, a smaller refractive index, and a larger band gap than a material for any of the core layer and the two cladding layers.

Abstract: A semiconductor layer formed on a clad layer and a light absorbing layer formed on the semiconductor layer are provided. The semiconductor layer includes a p-type region and an n-type region. The p-type region, which is of p-type, is provided on a side of one side portion of the light absorbing layer in a direction perpendicular to a direction in which light is guided, and the n-type region, which is of n-type, is provided on a side of another side portion of the light absorbing layer in the direction perpendicular to the direction in which light is guided. A p-type contact layer, which is of p-type, is formed on the p-type region, and an n-type contact layer is formed on the n-type region.

Abstract: A semiconductor optical module includes a semiconductor laser element region having an active layer, a first cladding layer which is formed such that the active layer is embedded therein, a second cladding layer which is formed underneath the active layer and the first cladding layer, and a heater unit which produces a temperature change in a waveguide; an optical waveguide element region including a spot-size converter which converts a spot size of incident laser light, and an optical waveguide core layer which is formed such that the spot-size converter is embedded therein, the first cladding layer contains InP, the second cladding layer is made of a material lower in refractive index and higher in thermal conductivity than the first cladding layer, and a third cladding layer which is made of a material lower in refractive index and lower in thermal conductivity than the second cladding layer is formed underneath the spot-size converter and the heater unit.

Abstract: A first conduction type first cladding layer and a second conduction type second cladding layer are arranged on the two sides in the vertical direction of a core portion having a multiple quantum-well structure, and a first conduction type third cladding layer and a second conduction type fourth cladding layer are arranged on the two sides in the horizontal direction of the core portion. A first electrode connected to the third cladding layer is formed. A second electrode connected to the fourth cladding layer is formed. A reverse bias is applied between the first and third cladding layers and the second and fourth cladding layers.

Abstract: A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency

Abstract: A wavelength tunable laser formed on a substrate made of single-crystal silicon is provided. The wavelength tunable laser includes a light emitting portion made of a III-V compound semiconductor, and external resonators provided with an optical filter. Cores included in the external resonators are made of one of SiN, SiON, and SiOn (n is smaller than 2).

Abstract: A semiconductor laser includes a distributed feedback active region and two distribution Bragg reflecting mirror regions which are arranged to be continuous with the distributed feedback active region. The distributed feedback active region has an active layer which is composed of a compound semiconductor and a first diffraction grating. The first diffraction grating is composed of a recessed portion which is formed to extend through a diffraction grating layer formed on the active layer and a projection portion which is adjacent to the recessed portion.

Abstract: To make it possible to more easily improve modulation efficiency in an optical modulator using a core made of an InP-based semiconductor. The optical modulator includes a lower cladding layer 102 formed on a substrate 101, a core 103 formed on the lower cladding layer 102, and an upper cladding layer 104 formed on the core 103. The core 103 is made of an InP-based semiconductor having a bandgap corresponding to a desired wavelength. Refractive indexes of the lower cladding layer 102 and upper cladding layer 104 are equal to or less than a refractive index of InP.

Abstract: An optical modulator includes a p-type first semiconductor layer (102) formed on a clad layer (101), an insulating layer (103) formed on the first semiconductor layer (102), and an n-type second semiconductor layer (104) formed on the insulating layer (103). The first semiconductor layer (102) is made of silicon or silicon-germanium, and the second semiconductor layer (104) is formed from a III-V compound semiconductor made of three or more materials.

Abstract: An optical modulator includes a p-type first semiconductor layer (102) formed on a clad layer (101), an insulating layer (103) formed on the first semiconductor layer (102), and an n-type second semiconductor layer (104) formed on the insulating layer (103). The first semiconductor layer (102) is made of silicon or silicon-germanium, and the second semiconductor layer (104) is formed from a III-V compound semiconductor made of three or more materials.

Abstract: A light-receiving element (10) according to the present invention includes a semiconductor layer (100) including a p-type semiconductor region (101), an n-type semiconductor region (102), and a multiplication region (103), and a p-type light absorption layer (104) formed on the multiplication region. The p-type semiconductor region and the n-type semiconductor region are formed to sandwich the multiplication region in a planar direction of the semiconductor layer. This allows an easy implementation of a light-receiving element that serves as an avalanche photodiode by a monolithic manufacturing process.

Abstract: An ECU is applied to a hybrid vehicle that is equipped with an internal combustion engine and a second motor-generator, which are configured to output a driving force for running. The hybrid vehicle is configured to run with the internal combustion engine in intermittent operation. Also, the ECU is configured to calculate an amount of dilution water that is mixed into oil in the internal combustion engine to dilute the oil. The ECU is configured to operate the internal combustion engine when the amount of the dilution water becomes larger than a first threshold.

Abstract: A light-receiving element (10) according to the present invention includes a semiconductor layer (100) including a p-type semiconductor region (101), an n-type semiconductor region (102), and a multiplication region(103), and a p-type light absorption layer (104) formed on the multiplication region. The p-type semiconductor region and the n-type semiconductor region are formed to sandwich the multiplication region in a planar direction of the semiconductor layer. This allows an easy implementation of a light-receiving element that serves as an avalanche photodiode by a monolithic manufacturing process.

Abstract: An ECU is applied to a hybrid vehicle that is equipped with an internal combustion engine and a second motor-generator, which are configured to output a driving force for running. The hybrid vehicle is configured to run with the internal combustion engine in intermittent operation. Also, the ECU is configured to calculate an amount of dilution water that is mixed into oil in the internal combustion engine to dilute the oil. The ECU is configured to operate the internal combustion engine when the amount of the dilution water becomes larger than a first threshold.

Abstract: According to one embodiment, an electronic apparatus includes a light reflection member including a light-reflecting surface on at least one surface, and including a first through-hole penetrating from the one surface to another surface, a luminous body provided on the one surface of the light reflection member, and including a light-emitting element, and a support member provided on a side of the other surface of the light reflection member, and including a second through-hole penetrating a surface facing the light reflection member and a surface opposite to the surface. Further, the first and second through-holes are provided to correspond to a position at which the light-emitting element is provided.

Abstract: According to one embodiment, a liquid crystal display device includes a liquid crystal cell, light source devices and a light guide plate. The light guide plate applies, to a rear surface of the liquid crystal cell, light beams from the light source devices. The light guide plate includes a first light input portion at a first-shorter-side side surface and a second light input portion at a second-shorter-side side surface. The light guide plate includes a flat first surface opposed to the rear surface and a second surface opposite to the first surface. The second surface includes a first slant surface inclined so that a thickness of the light guide plate decreases as a position goes from the first-shorter-side side surface to an approximately central portion and a second slant surface inclined so that the thickness decreases as a position goes from the second-shorter-side side surface to the approximately central portion.

Abstract: The objective of the invention is to provide a photonic crystal device which enables efficient confinement of carriers while preventing the deterioration of device characteristics. Specifically a photonic crystal device has a photonic crystal in which media with different refractive indexes are regularly arranged, wherein an active region (11) includes an active layer (12) and carrier confinement layers (13, 14) provided on the top and bottom of the active layer (12) respectively for confining carriers. The photonic crystal is formed by a buried growth layer (15) with a larger bandgap than that of the active region (11).

Abstract: A fuel cell system includes a fuel cell, anode gas pressure adjusting means that adjusts the pressure of an anode gas supplied to the fuel cell, and cathode gas pressure adjusting means that adjusts the pressure of a cathode gas supplied to the fuel cell. The system further includes pressure control means that sets the pressure of the anode gas that is supplied when starting the fuel cell higher than the pressure of the anode gas that is supplied during power generation in the fuel cell, and controls the anode gas pressure adjusting means and the cathode gas pressure adjusting means so that a cathode gas pressure increase is started in accordance with the start of an anode gas pressure increase when the pressure of the anode gas is increased to the set pressure.