Abstract: A device control apparatus acquires information on the environment surrounding devices from an environment acquisition sensor. The device control apparatus determines, on the basis of the acquired environment information, whether the devices can be remotely controlled safely. When remote operation instruction data is received from a terminal apparatus via an external network (N2), the device control apparatus generates a control signal for controlling devices to be operated and transmits the generated control signal to such devices via an in-house network only in a case where it is determined that such devices can be remotely controlled safely.

Abstract: A light emitting device includes a semiconductor light emitting element, a resin layer, and a metal wire. The semiconductor light emitting element includes a semiconductor stack and an electrode. The semiconductor stack has one surface. The metal wire has a first surface, a second surface opposite to the first surface, and an end surface between the first surface and the second surface. The metal wire is provided in the resin layer and electrically connected to an upper surface of the electrode via the first surface. The end surface of the metal wire is exposed from the resin layer. A lower end of the end surface closest to the first surface of the metal wire that is exposed from the resin layer is provided at an opposite side of the one surface of the semiconductor stack with respect to the upper surface of the electrode.

Abstract: A sample tube is arranged in a sample temperature adjusting pipe, and a temperature adjustment gas is supplied. A vacuum vessel is formed with the sample temperature adjusting pipe and an outer wall body, and a detection coil and the like to be placed in a cooling state are arranged in the vacuum vessel. A sealed section between the sample temperature adjusting pipe and the outer wall body is sealed by a sealing structure. The sealing structure includes a high-vacuum O-ring and a low-temperature O-ring. The high-vacuum O-ring has characteristics for sealing the sealed section in a regular temperature region. The regular temperature region is a temperature region excluding a low temperature region, and the low temperature region is a temperature region including a lower limit in a possible temperature adjustment range of the temperature adjustment gas. The low-temperature O-ring has characteristics for sealing the sealed section in the low temperature region.

Abstract: A method of manufacturing a separation membrane structure comprising a step of forming a first to nth zeolite membranes on a surface of a porous substrate by “n” repetitions (wherein n is an integer greater than or equal to 2) of formation of a zeolite membrane by a method of hydrothermal synthesis. The following formula (1) is established in relation to the step of forming the first to the nth zeolite membranes. (Formula 1) N1/N0+0.1?T2˜n/T1?2N1/N0+2 (Wherein, N1 denotes a permeation rate of a predetermined gas in the substrate after formation of the first zeolite membrane, No denotes a permeation rate of a predetermined gas in the substrate before formation of the first zeolite membrane, T1 is a time required for formation of the first zeolite membrane, and T2˜n is a total time required for formation of the second to the nth zeolite membranes.

Abstract: A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the ligh

Abstract: The present invention provides a compound having a PDE2A selective inhibitory action, which is useful as an agent for the prophylaxis or treatment of schizophrenia, Alzheimer's disease and the like. The present invention is a compound represented by the formula (1): wherein each symbol is as described in the specification, or a salt thereof.

Abstract: Provided is a compound represented by the formula (I): wherein each symbol is as defined in the specification, or a salt thereof, which has an AMPA (?-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid) receptor potentiating action. The compound of the present invention is useful as a prophylactic or therapeutic drug for depression, schizophrenia, Alzheimer's disease or attention deficit hyperactivity disorder (ADHD) and the like.

Abstract: A control system is provided with: a control device that controls facility equipment on the basis of previously set control information; and a terminal that communicates with the control device. The terminal has: an image capturer that captures an image; an analyzer that acquires setting-support information for setting the control information in the control device by analyzing the image captured by means of the image capturer; and a transmitter that transmits to the control device the setting-support information acquired by means of the analyzer. The control device has: a receiver that receives the setting-support information transmitted from the transmitter; and a setter that sets the control information on the basis of the setting-support information received by means of the receiver.

Abstract: The present invention relates to a fluid machine. A pump integrated expander (29A) includes a pump unit (60) and an expansion unit (50). In the pump unit (60), a casing member (65) supports a gear pump (61), a rotating shaft (28) and a driven crank mechanism (81). In the expansion unit (50), a casing including a main body (51a) and a casing member (54) supports an expander (23) including a fixed scroll (51) and an orbiting scroll (52). The pump integrated expander (29A) is divided into the pump unit (60) and the expansion unit (50) by separating at the fitted portion of a tubular portion (65c) on the pump unit (60) side and a smaller inner diameter portion (54b) on the expansion unit (50) side and by pulling the eccentric bush (83) out of a drive bearing (56).

Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

Abstract: Provided is a compound having an AMPA receptor function enhancing action, and useful as a prophylactic or therapeutic drug for depression, Alzheimer's disease, schizophrenia, attention deficit hyperactivity disorder (ADHD) and the like. A compound represented by the formula (I): wherein each symbol is as defined in the present specification, or a salt thereof.

Abstract: The present invention provides a compound having a PDE2A selective inhibitory action, which is useful as an agent for the prophylaxis or treatment of schizophrenia, Alzheimer's disease and the like. The present invention is a compound represented by the formula (1): wherein each symbol is as described in the specification, or a salt thereof.

Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

Abstract: Provided is a compound represented by the formula (I): wherein each symbol is as defined in the specification, or a salt thereof, which has an AMPA (?-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid) receptor potentiating action. The compound of the present invention is useful as a prophylactic or therapeutic drug for depression, schizophrenia, Alzheimer's disease or attention deficit hyperactivity disorder (ADHD) and the like.

Abstract: Provided is a compound having an AMPA receptor function enhancing action, and useful as a prophylactic or therapeutic drug for depression, schizophrenia, Alzheimer's disease, attention deficit hyperactivity disorder (ADHD) and the like. The compound represented by formula (I): wherein each symbol is as defined in the DESCRIPTION, or a salt thereof has an AMPA receptor function enhancing action, and is useful as a prophylactic or therapeutic drug for depression, schizophrenia, Alzheimer's disease or attention deficit hyperactivity disorder (ADHD) and the like.

Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

Abstract: The present invention provides a compound having a PDE2A selective inhibitory action, which is useful as an agent for the prophylaxis or treatment of schizophrenia, Alzheimer's disease and the like. The present invention is a compound represented by the formula (1): wherein each symbol is as described in the specification, or a salt thereof.

Abstract: In an appliance control system, a receiver receives, from a terminal device used by a first user, an instruction for remotely controlling an appliance installed in a home. A determiner determines whether a second user is present in a location in which an appliance-to-be-instructed is installed. When it is determined that the second user is not present in a location in which the appliance-to-be-instructed is installed, an appliance controller controls the appliance on the basis of the instruction. On the other hand, when it is determined that the second user is present in the location in which the appliance-to-be-instructed is installed, the appliance controller does not control the appliance.

Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

Abstract: The problem of the present invention is to provide a compound having a PDE2A inhibitory action, and useful as a prophylactic or therapeutic drug for schizophrenia, Alzheimer's disease and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as described in the DESCRIPTION, or a salt thereof.