Abstract: To provide a semiconductor apparatus including a transistor element layer having a plurality of transistors which are multi-gate transistors of a floating body structure, a first wiring layer having at least one signal line which electrically connects between a source and a gate or between a drain and a gate of at least one pair of transistors among the plurality of transistors, the first wiring layer being laminated on the side of one surface of the transistor element layer, and a second wiring layer having at least one signal line which electrically connects between a source and a gate or between a drain and a gate of at least another pair of transistors among the plurality of transistors, the second wiring layer being laminated on the side of another surface of the transistor element layer.

Abstract: A stacked chip is provided comprising a first semiconductor chip and a second semiconductor chip, wherein the first semiconductor chip has a first supporting substrate and a first circuit layer including a first region in which a first circuit is formed and a second region in which a second circuit is formed, the second semiconductor chip has a second supporting substrate, a second circuit layer including a third region that corresponds to a position of the first region and a fourth region that corresponds to a position of the second region and in which the second circuit is formed, a first embedded portion embedded in a first hole portion penetrating through the third region and extending to an inside of the second supporting substrate, and a first through via that penetrates through the first embedded portion and the second supporting substrate, and is electrically conducted with the first circuit.

Abstract: Provided is a stacked device comprising: a plurality of circuit layers each having a circuit portion; an insulating layer configured to cover a plurality of circuit portions included in a part of circuit layers of the plurality of circuit layers, and a plurality of conductive vias provided in the insulating layer and electrically connected to the plurality of circuit portions, wherein the conductive via electrically connected to a partial circuit portion of the plurality of circuit portions is electrically insulated on an end surface on an opposite side to the plurality of circuit portions and the partial circuit portion is broken at least partially along a stacking direction.

Abstract: A semiconductor device includes a power supply and ground layer and a semiconductor chip disposed over the power supply and ground layer. The power supply and ground layer includes a substrate and a wiring part. The substrate has one or more grooves whose openings are directed toward the semiconductor chip, and the wiring part is disposed within the one or more grooves via an insulating layer and is formed in a predetermined pattern. The substrate is connected to ground wiring of the semiconductor chip and the wiring part is connected to power supply wiring of the semiconductor chip. The wiring part is not exposed from a back surface of the substrate.

Abstract: To provide a three-dimensional printing device that irradiates approximately the same ranges on the surface of a powder layer simultaneously with a plurality of electron beams having different beam shapes. An electron beam column 200 of the three-dimensional printing device 100 includes a plurality of electron sources 20 including electron sources having anisotropically-shaped beam generating units, and beam shape deforming elements 30 that deform the beam shapes of electron beams output from the electron sources 20 on a surface 63 of a powder layer 62. A deflector 50 included in the electron beam column 200 deflects an electron beam output from each of the plurality of electron sources 20 by a distance larger than the beam space between electron beams before passing through the deflector 50.

Abstract: Provided is a three-dimensional laminating and shaping apparatus 100 including a column unit 200 that is configured to output an electron beam EB and deflect the electron beam EB toward the front surface of a powder layer 32, an insulating portion that electrically insulates a three-dimensional structure 36 from a ground potential member, an ammeter 73 that is configured to measure the current value indicative of the current flowing into the ground after passing through the three-dimensional structure 36, a melting judging unit 410 that is configured to detect that the powder layer 32 is melted based on the current value measured by the ammeter 73 and generate a melting signal, and a deflection controller 420 that is configured to receive the melting signal to determine the condition for the irradiation with the electron beam.

Abstract: When testing a memory chip, the memory chip is determined to be defective if even a portion of the memory chip is defective, and is discarded, which lowers the yield of the three-dimensional memory device. A three-dimensional device is provided comprising a plurality of stacked circuit chips each having one or more circuit blocks in each of a plurality of divided regions obtained by dividing a circuit plane and an interconnect portion communicatively connected, for each group of circuit blocks included in each of the divided regions overlapping in a stacking direction in the plurality of circuit chips, to a predetermined number of circuit blocks sorted from the circuit blocks within the group.

Abstract: Provided is a three-dimensional laminating and shaping apparatus 100 including a column unit 200 that is configured to output an electron beam EB and deflect the electron beam EB toward the front surface of a powder layer 32, an electron detector 72 that is configured to detect electrons that may be emitted in a predetermined direction from the front surface of the powder layer 32 when the powder layer 32 is irradiated with the electron beam EB, a melting judging unit 410 that is configured to generate a melting signal based on the strength of the detection signal from the electron detector 72, and a deflection controller 420 that is configured to receive the melting signal to determine the condition of the irradiation the electron beam.

Abstract: A 3D additive manufacturing device 100 is provided, including a determination unit 116 that receives modeling data relating to a shape of a section of a 3D structure 66 and determines data of irradiation positions, beam shapes, and irradiation times of a first beam and a second beam along a continuous curve, a storage unit 118 that stores the data determined by the determination unit 116, a deflection control unit 150 that outputs the irradiation position data to a deflector 50 at a timing generated based on the irradiation time data, and a deformation element control unit 130 that outputs the beam shape data to a deformation element 30. Thus, the 3D additive manufacturing device 100 forms a 3D structure by laminating sectional layers constituted by curves in a manner of melting/solidifying a powder layer while performing irradiation with the first beam and the second beam along the continuous curve.

Abstract: To realize a multi-beam formation device that can stably machine a fine pattern using complementary lithography, provided is a device that deforms and deflects a beam, including an aperture layer having a first aperture that deforms and passes a beam incident thereto from a first surface side of the device and a deflection layer that passes and deflects the beam that has been passed by the aperture layer. The deflection layer includes a first electrode section having a first electrode facing a beam passing space in the deflection layer corresponding to the first aperture and a second electrode section having an extending portion that extends toward the beam passing space and is independent from an adjacent layer in the deflection layer and a second electrode facing the first electrode in a manner to sandwich the beam passing space between the first electrode and an end portion of the second electrode.

Abstract: To provide a three-dimensional printing device that irradiates approximately the same ranges on the surface of a powder layer simultaneously with a plurality of electron beams having different beam shapes. An electron beam column 200 of the three-dimensional printing device 100 includes a plurality of electron sources 20 including electron sources having anisotropically-shaped beam generating units, and beam shape deforming elements 30 that deform the beam shapes of electron beams output from the electron sources 20 on a surface 63 of a powder layer 62. A deflector 50 included in the electron beam column 200 deflects an electron beam output from each of the plurality of electron sources 20 by a distance larger than the beam space between electron beams before passing through the deflector 50.

Abstract: Provided is a three-dimensional laminating and shaping apparatus 100 including a column unit 200 that is configured to output an electron beam EB and deflect the electron beam EB toward the front surface of a powder layer 32, an electron detector 72 that is configured to detect electrons that may be emitted in a predetermined direction from the front surface of the powder layer 32 when the powder layer 32 is irradiated with the electron beam EB, a melting judging unit 410 that is configured to generate a melting signal based on the strength of the detection signal from the electron detector 72, and a deflection controller 420 that is configured to receive the melting signal to determine the condition of the irradiation the electron beam.

Abstract: Provided is a three-dimensional laminating and shaping apparatus 100 including a column unit 200 that is configured to output an electron beam EB and deflect the electron beam EB toward the front surface of a powder layer 32, an insulating portion that electrically insulates a three-dimensional structure 36 from a ground potential member, an ammeter 73 that is configured to measure the current value indicative of the current flowing into the ground after passing through the three-dimensional structure 36, a melting judging unit 410 that is configured to detect that the powder layer 32 is melted based on the current value measured by the ammeter 73 and generate a melting signal, and a deflection controller 420 that is configured to receive the melting signal to determine the condition for the irradiation with the electron beam.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: An exposure apparatus is configured to include an electronic optical system 108 that generates an electron ray and irradiates a wafer W with the electron ray, a wafer stage WS that holds the wafer W, and an electron detector 44 and a fog preventing mechanism 70 that are placed between the electronic optical system 108 and the wafer stage WS. A substrate 71 constitutes the fog preventing mechanism 70, and opening holes 71a0 that penetrate up to the upper surface of the substrate 71 are formed in a first area of the bottom surface of the substrate 71, and opening holes 71a0 that are closed in the substrate 71 are formed in a second area of the bottom surface.

Abstract: To realize a multi-beam formation device that can stably machine a fine pattern using complementary lithography, provided is a device that deforms and deflects a beam, including an aperture layer having a first aperture that deforms and passes a beam incident thereto from a first surface side of the device and a deflection layer that passes and deflects the beam that has been passed by the aperture layer. The deflection layer includes a first electrode section having a first electrode facing a beam passing space in the deflection layer corresponding to the first aperture and a second electrode section having an extending portion that extends toward the beam passing space and is independent from an adjacent layer in the deflection layer and a second electrode facing the first electrode in a manner to sandwich the beam passing space between the first electrode and an end portion of the second electrode.

Abstract: Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.