Patents by Inventor Shinnosuke Ushio
Shinnosuke Ushio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230299716Abstract: A measurement method for a photovoltaic module includes loading and measuring . The loading includes loading a photovoltaic module onto a measurement device. The measuring includes measuring, with an output characteristic measurer included in the measurement device, an output voltage value and an output current value between a positive terminal and a negative terminal of the photovoltaic module, and measuring, with a weight measurer included in the measurement device, a weight value of the photovoltaic module.Type: ApplicationFiled: July 16, 2021Publication date: September 21, 2023Inventors: Yusuke MIYAMICHI, Keita KUROSU, Shinnosuke USHIO, Daisuke NISHIMURA, Motoki SHIBAHARA, Masaya TAKAHASHI
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Publication number: 20230283233Abstract: A measurement device for a photovoltaic module includes an output characteristic measurer and a weight measurer. The output characteristic measurer measures an output voltage value and an output current value between a positive terminal and a negative terminal of the photovoltaic module. The weight measurer measures a weight value of the photovoltaic module.Type: ApplicationFiled: July 15, 2021Publication date: September 7, 2023Inventors: Yusuke MIYAMICHI, Keita KUROSU, Shinnosuke USHIO, Daisuke NISHIMURA, Motoki SHIBAHARA, Masaya TAKAHASHI
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Patent number: 9935219Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: GrantFiled: October 10, 2016Date of Patent: April 3, 2018Assignee: KYOCERA CorporationInventors: Shintaro Kubo, Michimasa Kikuchi, Hideaki Asao, Shinnosuke Ushio
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Publication number: 20170025556Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: ApplicationFiled: October 10, 2016Publication date: January 26, 2017Inventors: Shintaro KUBO, Michimasa KIKUCHI, Hideaki ASAO, Shinnosuke USHIO
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Patent number: 9484476Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: GrantFiled: March 15, 2012Date of Patent: November 1, 2016Assignee: KYOCERA CORPORATIONInventors: Shintaro Kubo, Michimasa Kikuchi, Hideaki Asao, Shinnosuke Ushio
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Publication number: 20150000743Abstract: A photoelectric conversion efficiency of a photoelectric conversion device is improved. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer disposed on the electrode layer and including a group I-III-VI compound and oxygen element, and a second semiconductor layer disposed on the first semiconductor layer and forming a pn junction with the first semiconductor layer, and an atomic concentration of the oxygen element in the first semiconductor layer is lower in a surface portion on the electrode layer side than in a central portion of the first semiconductor layer in a lamination direction thereof.Type: ApplicationFiled: November 28, 2012Publication date: January 1, 2015Applicant: KYOCERA CorporationInventors: Yusuke Miyamichi, Tatsuya Domoto, Rui Kamada, Yuji Asano, Shinnosuke Ushio
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Patent number: 8916905Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.Type: GrantFiled: April 22, 2011Date of Patent: December 23, 2014Assignee: KYOCERA CorporationInventors: Shintaro Kubo, Shuji Nakazawa, Rui Kamada, Seiji Oguri, Shinnosuke Ushio, Shuichi Kasai, Seiichiro Inai
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Publication number: 20140014177Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: ApplicationFiled: March 15, 2012Publication date: January 16, 2014Applicant: KYOCERA CORPORATIONInventors: Shintaro Kubo, Michimasa Kikuchi, Hideaki Asao, Shinnosuke Ushio
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Publication number: 20130240948Abstract: The present invention aims to improve the conversion efficiency in a photoelectric conversion device. A photoelectric conversion device comprises an electrode, a first semiconductor layer containing a Group I-III-VI compound semiconductor and located on the electrode, and a second semiconductor layer having a conductivity type different from that of the first semiconductor layer and located on the first semiconductor layer, wherein, in the first semiconductor layer, a ratio CVI/CI of the content CVI of a Group VI-B element to the content CI of a Group I-B element in a surface part of the second semiconductor layer side thereof is larger than the ratio CVI/CI in a rest part of the electrode side thereof.Type: ApplicationFiled: November 18, 2011Publication date: September 19, 2013Applicant: KYOCERA CORPORATIONInventor: Shinnosuke Ushio
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Publication number: 20130037901Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.Type: ApplicationFiled: April 22, 2011Publication date: February 14, 2013Applicant: KYOCERA CORPORATIONInventors: Shintaro Kubo, Shuji Nakazawa, Rui Kamada, Seiji Oguri, Shinnosuke Ushio, Shuichi Kasai, Seiichiro Inai