Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element.

Abstract: [Problem] To provide a solid-state imaging device and an electronic apparatus capable of improving detection sensitivity while enabling miniaturization of pixels.

Abstract: There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Abstract: There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Abstract: There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Abstract: To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate. The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge.

Abstract: [Problem] Provided are: a solid-state imaging element capable of actualizing a phase difference detection pixel that enables a finer pattern of pixels and also enables improvement in quality of a captured image in a stacked structure including a plurality of photodiodes; a method for manufacturing the solid-state imaging element; and an electronic apparatus. [Solution] Provided is a solid-state imaging element including a plurality of pixels including at least two phase difference detection pixels for focus detection. In the solid-state imaging element, each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.

Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element.

Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.

Abstract: A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

Abstract: Provided is a solid-state imaging element including a plurality of pixels that includes at least two phase difference detection pixels for focus detection. Each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.

Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate; a first photoelectric converter; a through electrode; a first dielectric film; and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter. The through electrode penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate. The first dielectric film has first film thickness. The second dielectric film is provided on a side surface of the through hole. The second dielectric film has second film thickness.

Abstract: A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.

Abstract: This disclosure relates to a solid-state imaging element, an electronic device, and a fabrication method that each enable further reduction of the element layout area. A photoelectric conversion element disposed on a first face of a semiconductor substrate is connected to a gate of an amplification transistor and a floating diffusion disposed in a second face of the semiconductor substrate through penetrating electrodes that are each connected to the photoelectric conversion element. In this pixel structure, a dielectric layer is disposed between the penetrating electrodes in the second face, and a shielded electrode is disposed on an inner side of the dielectric layer seen from a side of the second face. The dielectric layer is thicker than a gate insulating film of the transistor on the side of the second face. This disclosure is applicable to a back-side illumination solid-state imaging element, for example.

Abstract: [Problem] Provided are: a solid-state imaging element capable of actualizing a phase difference detection pixel that enables a finer pattern of pixels and also enables improvement in quality of a captured image in a stacked structure including a plurality of photodiodes; a method for manufacturing the solid-state imaging element; and an electronic apparatus. [Solution] Provided is a solid-state imaging element including a plurality of pixels including at least two phase difference detection pixels for focus detection. In the solid-state imaging element, each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.

Abstract: Provided is a solid state image sensor capable of reducing signal mixture due to electric capacitive coupling between adjacent pixels, a method for manufacturing the same, and an electronic device. A first pixel and a second pixel are adjacently arranged in the solid state image sensor. Each of the first pixel and the second pixel has a photoelectric conversion film for photoelectrically converting an incident light, and a lower electrode arranged below the photoelectric conversion film, and another electrode different from the lower electrodes is provided between the lower electrodes of the first pixel and the second pixel. The present disclosure is applicable to solid state image sensors and the like, for example.

Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element.

Abstract: [Problem] To provide a solid-state imaging device and an electronic apparatus capable of improving detection sensitivity while enabling miniaturization of pixels.

Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element.