Patents by Inventor Shinpei Iljima

Shinpei Iljima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HSG semiconductor capacitor with migration inhibition layer
    Patent number: 6717202
    Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: April 6, 2004
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Yasuhiro Sugawara, Ryouichi Furukawa, Toshio Uemura, Akira Takamatsu, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Shinpei Iljima, Yuzuru Ohji
  • Semiconductor device and method of fabricating the same
    Patent number: 6524927
    Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.
    Type: Grant
    Filed: September 7, 1999
    Date of Patent: February 25, 2003
    Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Yasuhiro Sugawara, Ryouichi Furukawa, Toshio Uemura, Akira Takamatsu, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Shinpei Iljima, Yuzuru Ohji
  • Fabricating method of semiconductor integrated circuits
    Publication number: 20020102826
    Abstract: A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.
    Type: Application
    Filed: December 18, 2001
    Publication date: August 1, 2002
    Inventors: Yasuhiro Shimamoto, Masahiko Hiratani, Yuichi Matsui, Satoshi Yamamoto, Toshihide Nabatame, Toshio Ando, Hiroshi Sakuma, Shinpei Iljima