Abstract: A semiconductor device includes at least one arm series circuit, a conductive first thermal buffer member, and a conductive second thermal buffer member. The arm series circuit includes an upper arm, a lower arm, a positive-electrode terminal, a negative-electrode terminal, and an output terminal. The first thermal buffer member has a linear expansion coefficient greater than a linear expansion coefficient of the first switching device and smaller than a linear expansion coefficient of one of the positive-electrode terminal and the output terminal. The second thermal buffer member has a linear expansion coefficient greater than a linear expansion coefficient of the second switching device and smaller than a linear expansion coefficient of one of the negative-electrode terminal and the output terminal.

Abstract: In the motor-driving circuit module, a first electrode surface of a first electrode and a third electrode surface of a third electrode are arranged so as to face each other and such that currents flow in opposite directions in the first electrode and the third electrode when a current flows through the first electrode. Additionally, a second electrode surface of a second electrode and the third electrode surface of the third electrode are arranged so as to face each other and such that currents flow in opposite directions in the second electrode and the third electrode when a current flows through the second electrode.

Abstract: Provided is a switching circuit including an arm having two switching elements connected. The switching elements are SiC semiconductors, and when a commutation current flows to the reverse conducting element, the switching element having the reverse conducting element connected in parallel thereto is turned on.

Abstract: A semiconductor device includes at least one arm series circuit, a conductive first thermal buffer member, and a conductive second thermal buffer member. The arm series circuit includes an upper arm, a lower arm, a positive-electrode terminal, a negative-electrode terminal, and an output terminal. The first thermal buffer member has a linear expansion coefficient greater than a linear expansion coefficient of the first switching device and smaller than a linear expansion coefficient of one of the positive-electrode terminal and the output terminal. The second thermal buffer member has a linear expansion coefficient greater than a linear expansion coefficient of the second switching device and smaller than a linear expansion coefficient of one of the negative-electrode terminal and the output terminal.