Abstract: The invention provides a substrate processing apparatus using a composite material which permits avoidance of occurrence of damages caused by the difference in thermal expansion between different materials and can be with stand the use at high temperatures. The substrate processing apparatus for processing a substrate is partially (for example, a substrate mounting stage) composed of a composite material 11 consisting of a matrix 12 comprising a ceramics member made of, for example, cordierite ceramics, aluminum nitride and/or a texture filled with an aluminum-based material (for example, aluminum or aluminum and silicon), and a ceramics layer (comprising, for example, Al2O3 and/or AlN) provided on the surface of the matrix 12.

Abstract: The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10.

Abstract: An apparatus 1 for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber 2 in which a specimen stage 12 having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage 12 by cooling the specimen stage 12 by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines 21a-21d having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage 12 is cooled by flowing the coolant through the pipelines 21a-21d.

Abstract: In a wafer temperature control method and a wafer temperature control device with which it is possible to raise the stability of the temperature of a wafer in a semiconductor manufacturing apparatus and the responsiveness of the temperature of the wafer to changes in a set wafer temperature and thereby obtain a higher quality product, the temperature of the wafer is controlled by both the flowrate of a coolant and the heat output of a heat source being controlled.

Abstract: A glass substrate processing apparatus, part of which comprises a composite material, the composite material being formed of a matrix and a ceramic layer formed on a surface of the matrix by a thermal spraying method, the matrix being formed of a ceramic member and an aluminum-containing material filled in a texture of the ceramic member.

Abstract: The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10.

Abstract: A method of dry etching treatment capable of attaining both high selectivity and fine fabrication at a high accuracy simultaneously is provided, in which an etching treatment comprising a plurality of steps are applied to a specimen W in one identical processing apparatus, and the temperature of the specimen is changed between etching of one step and etching of another step succeeding thereto, among the plurality of the steps, thereby applying etching at temperatures different between the one step and the step succeeding thereto.

Abstract: There are provided a static electricity chuck which can vary the temperature of a wafer in a short time without adversely effecting throughput, and a wafer stage having the static electricity chuck. The static electricity chuck includes a dielectric member 4 formed of insulating material, an electrode 5 of conductor which is disposed at the lower side of the dielectric member 4, and a heater 6 which is disposed at the lower side of the electrode 5 and heats the dielectric member 4. The wafer stage 1 includes the static electricity chuck which is provided on a metal jacket having cooling apparatus.

Abstract: Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater.