Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Abstract: In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.

Abstract: A power supply connecting member is configured by a housing of the power supply connecting member molded with a terminal of the power supply connecting member by a resin. The terminal of the power supply connecting member has three bent portions, two bent portions are perpendicular to an axial direction before the terminal is bent, and the remaining bent portion is parallel to the axial direction before the terminal is bent. A distal end on a bending side of the terminal of the power supply connecting member is inserted into the power supply connecting member housing to configure the power supply connecting member. An output shaft support portion unit is configured such that a bearing to hold a rotor and an elastic member (spring for example) to hold the bearing are stored in a bottom cover (lower cover) having a recessed portion and a lid cover (upper cover) is press-fitted.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.

Abstract: In order to provide an adhesive composition for electronic components that is excellent in adhesion durability under long-term high temperature conditions, thermal cyclability, and insulation reliability, designed is an adhesive composition for electronic components containing a thermoplastic resin (a), an epoxy resin (b), a hardener (c), and an organopolysiloxane (d), wherein the glass transition temperature (Tg) after curing is ?10° C. to 50° C. and the rate of change of Tg after heat-treating the composition at 175° C. for 1000 hours is 15% or less.