Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

Abstract: A plasma processing apparatus includes a measurement unit that, while controlling a supply power to a heater such that a temperature of the heater becomes constant, measures the supply power to the heater in a non-ignition state where a plasma is not ignited and in a transient state where the supply power to the heater is reduced after the plasma is ignited. The plasma processing apparatus also includes a parameter calculator that calculates a thickness of a top plate by performing a fitting on a calculation model which includes the thickness of the top plate as a parameter and calculates the supply power in the transient state, using the measured supply power in the non-ignition state and the transition state.

Abstract: There is a substrate support comprising: a base; an electrostatic chuck disposed on the base and having a substrate supporting surface to support the substrate; and an edge ring disposed to surround the substrate on the substrate supporting surface, wherein the electrostatic chuck has a ring supporting surface to support the edge ring, and an inner edge side of the ring supporting surface is lower than an outer edge side of the ring supporting surface.

Abstract: A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

Abstract: A cleaning method removes a silicon oxide film by plasma from a member that is provided in a processing container of a plasma processing apparatus and having the silicon oxide film formed on its surface. The cleaning method includes: supplying a processing gas into the processing container; generating plasma of the processing gas that is supplied into the processing container; and applying bias power that draws ions in the plasma of the processing gas to the member. A ratio of a value of the bias power to a pressure in the processing container is 1.0 W/mTorr or less.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

Abstract: A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: When a plasma processing apparatus changes processing parameters of a plasma processing that include at least a temperature of a stage and a temperature of each zone obtained by dividing a placing surface of the stage into multiple patterns, and measures the temperature of each zone and a supply current to a hater in a state where the temperature is stabilized, an acquisition unit acquires the measurement data. The generator generates a prediction model using the measurement data, assuming that heat with heat quantity proportional to a temperature difference between adjacent zones moves therebetween, heat with heat quantity proportional to a temperature difference between the stage and each zone moves therebetween, heat with heat quantity calculated from the supply current to the heater of each zone is input to the zone, and quantity of heat input and quantity of heat output in each zone are consistent.

Abstract: A plasma processing apparatus is provided. The plasma processing apparatus comprises: a dielectric member having a placement surface on which an object to be processed is placed and a back surface opposite to the placement surface, and having a first through-hole penetrating through the placement surface and the back surface; a mounting table having a support surface for supporting the dielectric member and a base having a second through-hole communicating with the first through-hole; and an embedded member disposed in the first through-hole and the second through-hole, wherein the embedded member includes a first embedded member disposed in the first through-hole and a second embedded member disposed in the second through-hole, and the rigidity of the second embedded member is lower than the rigidity of the first embedded member.

Abstract: A plasma processing apparatus includes: a substrate support on which a substrate is supported; a detector configured to detect a temperature of the substrate support; a measurement unit configured to measure, by the detector, a temperature change of the substrate support while the temperature of the substrate support is increasing after igniting plasma or while the temperature of the substrate support is decreasing after the plasma processing is completed and the plasma is extinguished, based on the temperature of the substrate support detected by the detector; and an acquisition unit configured to acquire a thermal resistance between the substrate and the substrate support based on the temperature change of the substrate support measured by the measurement unit.

Abstract: A stage includes a first placement table on which a substrate is placed, and a second placement table configured to place thereon a ring-shaped edge ring arranged around the substrate. The second placement table includes an electrostatic clamping electrode configured to clamp the edge ring by being applied with a voltage, and a temperature adjuster provided on at least one of an inner peripheral side and an outer peripheral side of the edge ring with respect to the electrostatic clamping electrode.

Abstract: A substrate processing apparatus includes: a placing table having a placement surface and provided with a heater in each divided region obtained by dividing the placement surface; a calculation unit that calculates a target temperature of the heater in each divided region in which a critical dimension at a predetermined measurement point satisfies a predetermined condition, using a prediction model that predicts the critical dimension of the measurement point by using a temperature of the heater in each divided region as a parameter and taking into consideration an influence of a temperature of a heater in a divided region other than a divided region including the measurement point in accordance with a distance between the measurement point and the other divided region; and a heater controller that controls the heater in each divided region to reach the target temperature when the substrate processing is performed on the substrate.

Abstract: An upper electrode is disposed in a processing container to face a wafer and configured to adjust a flow rate of a processing gas for each of divided regions obtained by dividing a facing surface that faces the wafer. A calculator calculates a target flow rate of the processing gas of each of the divided regions where a critical dimension (CD) of a measurement point satisfies a predetermined condition using a prediction model for predicting the CD at a predetermined measurement point of the wafer when plasma etching is performed on the wafer using the flow rate of the processing gas in each of the divided regions as a parameter. A flow rate controller performs a flow rate control such that the flow rate of the processing gas supplied from each of the divided regions of the upper electrode becomes the calculated target flow rate.

Abstract: A plasma processing apparatus includes: a vacuumable processing container; a lower electrode provided inside the processing container and for placing a substrate thereon; an edge ring arranged to surround a periphery of the substrate; an electrostatic chuck provided on the lower electrode to attract the substrate and the edge ring; a heat-transfer-gas supply part for supplying a heat transfer gas between the electrostatic chuck and the edge ring through one or more first through-holes respectively formed in the lower electrode and the electrostatic chuck; and a heat-transfer-gas exhaust part for exhausting the heat transfer gas between the electrostatic chuck and the edge ring through one or more second through-holes respectively formed in the lower electrode and the electrostatic chuck. Electrostatic chuck openings of the second through-holes are formed radially inward of those of the first through-holes between the electrostatic chuck and the edge ring.

Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.