Abstract: A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a semiconductor fine particle layer, and immersing the semiconductor fine particle layer in a solution to form a semiconductor thin film.

Abstract: Disclosed herein is an electronic device of a three-terminal type including, a control electrode, first and second electrodes, and an active layer provided between the first and second electrodes so as to face the control electrode with an insulating layer interposed therebetween, the active layer being formed from an aggregate of a composite material formed from inorganic semiconductor fine particles covered with a protective layer, the protective layer including an alkyl chain having, at one end thereof, a functional group bonded to an inorganic semiconductor fine particle and further having an organic semiconductor molecule bonded to the other end thereof.

Abstract: A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a semiconductor fine particle layer, and immersing the semiconductor fine particle layer in a solution to form a semiconductor thin film.

Abstract: Disclosed herein is an electronic device of a three-terminal type including, a control electrode, first and second electrodes, and an active layer provided between the first and second electrodes so as to face the control electrode with an insulating layer interposed therebetween, the active layer being formed from an aggregate of a composite material formed from inorganic semiconductor fine particles covered with a protective layer, the protective layer including an alkyl chain having, at one end thereof, a functional group bonded to an inorganic semiconductor fine particle and further having an organic semiconductor molecule bonded to the other end thereof.

Abstract: A fracture structure is grown from a plurality of starting points. A fractal structure, grown from respective starting points and interconnected by interactive growths, forms a neural network. A growth speed originated at a specific starting point is determined by the probability of a material reaching a grown portion from a remote location by means of a diffusion process and the probability of a growth promoting factor reaching a grown portion by means of a diffusion process from a portion grown from a starting point other than the specific one. Anisotropy is introduced into a space in which a fractal structure is to be grown, as required.

Abstract: In a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, at least two layers of one-dimensional unit structures are bonded in at least one site. For example, in a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, at least two layers of the unit spiral structures are bonded in at least one site. Alternatively, in a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, at least two layers of ring unit structures are bonded in at least one site.

Abstract: In a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, at least two layers of one-dimensional unit structures are bonded in at least one site. For example, in a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, at least two layers of the unit spiral structures are bonded in at least one site. Alternatively, in a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, at least two layers of ring unit structures are bonded in at least one site.

Abstract: In a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, at least two layers of one-dimensional unit structures are bonded in at least one site. For example, in a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, at least two layers of the unit spiral structures are bonded in at least one site. Alternatively, in a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, at least two layers of ring unit structures are bonded in at least one site.